Infineon Technologies IRF7807TRPBF

Name: IRF7807TRPBF
Brand: Infineon Technologies
SKU: 2479567-IRF7807TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7807TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479567-IRF7807TRPBF

Description:: MOSFET N-CH 30V 8.3A 8-SOIC

ECAD Model:

Datasheet:: IRF7807TRPBF

Specifications

Infineon Technologies IRF7807TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7807TRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
Resistance
25MOhm
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
13A
Number of Elements
1
Row Spacing
6.3 mm
Number of Channels
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
25m Ω @ 7A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Current - Continuous Drain (Id) @ 25°C
8.3A Ta
Gate Charge (Qg) (Max) @ Vgs
17nC @ 5V
Rise Time
17ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V
Vgs (Max)
±12V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
8.3A
Threshold Voltage
1V
Gate to Source Voltage (Vgs)
12V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
66A
Dual Supply Voltage
30V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
1 V
Height
1.75mm
Length
4.9784mm
Width
4.05mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF7807TRPBF Overview
This device has a continuous drain current (ID) of [8.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30V, the drain-source breakdown voltage is 30V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.A maximum pulsed drain current of 66A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1V.Its overall power consumption can be reduced by using drive voltage (4.5V).

IRF7807TRPBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 25 ns
based on its rated peak drain current 66A.
a threshold voltage of 1V

IRF7807TRPBF Applications
There are a lot of Infineon Technologies
IRF7807TRPBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF7807TRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 17 Milliohms;ID 8.3A;SO-8;PD 2.5W;VGS /-12V
Single N-Channel 30 V 25 mOhm 17 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R / MOSFET N-CH 30V 8.3A 8-SOIC
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
MURATA - GRM31CE70J476ME15L - Condensador de Cerámica Multicapa, 47 µF, 6.3 V, 1206 [Métrica 3216], ± 20%, X7U, Serie GRM
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:8.3A; On Resistance, Rds(on):25mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SO ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF7807TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

Resistance

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Row Spacing

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Surface Mount

ECCN Code

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Max Power Dissipation

View Compare
IRF7807TRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2004

Not For New Designs

1 (Unlimited)

8

SMD/SMT

25MOhm

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

13A

1

6.3 mm

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

12 ns

N-Channel

SWITCHING

25m Ω @ 7A, 4.5V

1V @ 250μA

8.3A Ta

17nC @ 5V

17ns

4.5V

±12V

6 ns

25 ns

8.3A

1V

12V

30V

66A

30V

150°C

1 V

1.75mm

4.9784mm

4.05mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7233PBF

Infineon Technologies

-

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

-

-55°C~150°C TJ

Tube

HEXFET®

2004

Obsolete

1 (Unlimited)

-

-

20MOhm

-12V

MOSFET (Metal Oxide)

-

-

-9.5A

1

-

-

2.5W Ta

-

-

2.5W

-

P-Channel

-

20mOhm @ 9.5A, 4.5V

600mV @ 250μA

9.5A Ta

74nC @ 5V

540ns

2.5V 4.5V

±12V

370 ns

77 ns

-9.5A

-

12V

-12V

-

-

-

-

-

-

-

-

No

RoHS Compliant

Lead Free

8-SO

150°C

-55°C

6000pF @ 10V

12V

6nF

20mOhm

20 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7807TRPBF vs IRF7233PBF
IRF7201TR

Infineon Technologies

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

Obsolete

1 (Unlimited)

8

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

-

-

2.5W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

7.3A Tc

28nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

58A

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

550pF @ 25V

30V

-

-

-

YES

EAR99

LOGIC LEVEL COMPATIBLE

8541.29.00.95

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

MS-012AA

7.3A

0.03Ohm

30V

70 mJ

-

IRF7807TRPBF vs IRF7201TR
IRF710L

Vishay Siliconix

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

2016

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.6Ohm @ 1.2A, 10V

4V @ 250μA

2A Tc

17nC @ 10V

-

10V

±20V

-

-

2A

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

I2PAK

-

-

170pF @ 25V

400V

170pF

-

3.6 Ω

-

-

-

-

-

-

-

-

-

-

-

-

-

-

3.1W

IRF7807TRPBF vs IRF710L

Certification

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IRF7807TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7807TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	267	1 $0.7507 10 $0.663 25 $0.6604 100 $0.5403 250 $0.5389
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant	3432	1 $1.15 10 $1.019 100 $0.805 500 $0.62428 1000 $0.49286
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant	3432	1 $1.15 10 $1.019 100 $0.805 500 $0.62428 1000 $0.49286
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 8.3A 8-SOIC RoHS: Compliant	0	4000 $0.4466
IRF7807TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	12000	4000 $0.3706
IRF7807TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	267	20 $0.663 25 $0.6604 100 $0.5403 250 $0.5389
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET, 30V, 8.3A, 25 MOHM, 12 NC QG, SO-8 (Alt: S RoHS: Compliant	0	4000 $0.3329 8000 $0.3319 16000 $0.3309 24000 $0.3309 40000 $0.3299
IRF7807TRPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R (Alt: IR RoHS: Compliant	0
IRF7807TRPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R - Tape a RoHS: Compliant	0	4000 $0.3339 8000 $0.3219 16000 $0.3099 24000 $0.2999 40000 $0.2939
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 30V, 8.3A, SOIC, Transistor Polarit	228	1 $0.96 10 $0.812 25 $0.749 50 $0.687 100 $0.624 250 $0.588 500 $0.552 1000 $0.435
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 17 Mill RoHS: Compliant	0	4000 $1.037
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 30V 8.3A 25mOhm 12nC RoHS: Compliant	2577	1 $0.96 10 $0.812 100 $0.624 500 $0.552 1000 $0.435 4000 $0.386
IRF7807TRPBF DISTI #	Infineon Technologies AG	HEXFET MOSFET 8.3A 30V FOR DC-DC SOIC8, RL	1820	100 $0.452 500 $0.4 2000 $0.315 4000 $0.28
IRF7807TRPBF DISTI #	Infineon Technologies AG	N-Ch 30V 8,3A 2,5W 0,025R SO8 RoHS: Compliant	3250	50 $0.407 100 $0.347 500 $0.317 2000 $0.305
IRF7807TRPBF DISTI #	International Rectifier	RoHS: Compliant	4000
IRF7807TRPBF DISTI #	International Rectifier	INSTOCK	3990
IRF7807TRPBF DISTI #	48	INSTOCK	3990
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 30V, 8.3A, SOIC RoHS: Compliant	233	5 $0.635 25 $0.62 100 $0.457 250 $0.431 500 $0.404
IRF7807TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	267	10 $0.663 25 $0.6604 100 $0.5403 250 $0.5389
IRF7807TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.3A 8-Pin SOIC T/R RoHS: Compliant	12000	4000 $0.428
IRF7807TRPBF DISTI #	Infineon Technologies AG	MOSFET, N-CH, 30V, 8.3A, SOIC RoHS: Compliant	228	1 $1.53 10 $1.29 100 $0.987 500 $0.874 1000 $0.689 4000 $0.653
IRF7807TRPBF DISTI #	INFINEON/IR	SO-8 RoHS: Compliant	4000	4000 $0.49

IRF7807~~(48)~~
IRF780~~(80)~~
IRF78~~(83)~~
IRF7~~(80)~~
IRF~~(69)~~

Infineon Technologies IRF7807TRPBF

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