IRF7805PBF

Infineon Technologies IRF7805PBF

Part Number:
IRF7805PBF
Manufacturer:
Infineon Technologies
Ventron No:
2487596-IRF7805PBF
Description:
MOSFET N-CH 30V 13A 8-SOIC
ECAD Model:
Datasheet:
IRF7805PBF

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Specifications
Infineon Technologies IRF7805PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7805PBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Supplier Device Package
    8-SO
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    2.5W Ta
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    11mOhm @ 7A, 4.5V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    13A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    31nC @ 5V
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V
  • Vgs (Max)
    ±12V
  • RoHS Status
    ROHS3 Compliant
Description
IRF7805PBF Overview
Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V), this device helps reduce its overall power consumption.

IRF7805PBF Features
a 30V drain to source voltage (Vdss)


IRF7805PBF Applications
There are a lot of Rochester Electronics, LLC
IRF7805PBF applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF7805PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.2Milliohms;ID 13A;SO-8;PD 2.5W;VGS /-12V
Single N-Channel 30 V 11 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7805PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:4.5V
Product Comparison
The three parts on the right have similar specifications to IRF7805PBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Technology
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    RoHS Status
    Published
    Input Capacitance (Ciss) (Max) @ Vds
    Factory Lead Time
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Pbfree Code
    Number of Terminations
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Case Connection
    Turn On Delay Time
    Transistor Application
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    Resistance
    Additional Feature
    Voltage - Rated DC
    Terminal Position
    Terminal Form
    Current Rating
    Power Dissipation
    Output Current
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • IRF7805PBF
    IRF7805PBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8-SO
    -55°C~150°C TJ
    Tube
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Ta
    N-Channel
    11mOhm @ 7A, 4.5V
    3V @ 250μA
    13A Ta
    31nC @ 5V
    30V
    4.5V
    ±12V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7207TR
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    Obsolete
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Tc
    P-Channel
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    5.4A Tc
    22nC @ 4.5V
    20V
    2.7V 4.5V
    ±12V
    Non-RoHS Compliant
    2000
    780pF @ 15V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720LPBF
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -55°C~150°C TJ
    Tube
    -
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    3.1W Ta 50W Tc
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    ROHS3 Compliant
    2017
    410pF @ 25V
    12 Weeks
    Through Hole
    3
    6.000006g
    SILICON
    yes
    3
    1
    1
    Single
    ENHANCEMENT MODE
    DRAIN
    10 ns
    SWITCHING
    14ns
    13 ns
    30 ns
    3.3A
    TO-220AB
    20V
    400V
    9.01mm
    10.41mm
    4.7mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    Active
    1 (Unlimited)
    MOSFET (Metal Oxide)
    2.5W Tc
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    5.3A Ta
    25nC @ 10V
    20V
    4.5V 10V
    ±12V
    ROHS3 Compliant
    1997
    860pF @ 10V
    12 Weeks
    Surface Mount
    8
    -
    SILICON
    -
    8
    1
    -
    Single
    ENHANCEMENT MODE
    -
    14 ns
    SWITCHING
    26ns
    68 ns
    100 ns
    -5.3A
    -
    12V
    -
    1.4986mm
    4.9784mm
    3.9878mm
    No
    60mOhm
    LOGIC LEVEL COMPATIBLE
    -20V
    DUAL
    GULL WING
    -5.3A
    2.5W
    5.3A
    -2.5V
    -20V
    -20V
    100 ns
    -2.5 V
    No SVHC
    Contains Lead, Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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