Infineon Technologies IRF7805PBF
- Part Number:
- IRF7805PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2487596-IRF7805PBF
- Description:
- MOSFET N-CH 30V 13A 8-SOIC
- Datasheet:
- IRF7805PBF
Infineon Technologies IRF7805PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7805PBF.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.5W Ta
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs11mOhm @ 7A, 4.5V
- Vgs(th) (Max) @ Id3V @ 250μA
- Current - Continuous Drain (Id) @ 25°C13A Ta
- Gate Charge (Qg) (Max) @ Vgs31nC @ 5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V
- Vgs (Max)±12V
- RoHS StatusROHS3 Compliant
IRF7805PBF Overview
Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V), this device helps reduce its overall power consumption.
IRF7805PBF Features
a 30V drain to source voltage (Vdss)
IRF7805PBF Applications
There are a lot of Rochester Electronics, LLC
IRF7805PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Operating this transistor requires a 30V drain to source voltage (Vdss).By using drive voltage (4.5V), this device helps reduce its overall power consumption.
IRF7805PBF Features
a 30V drain to source voltage (Vdss)
IRF7805PBF Applications
There are a lot of Rochester Electronics, LLC
IRF7805PBF applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF7805PBF More Descriptions
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 9.2Milliohms;ID 13A;SO-8;PD 2.5W;VGS /-12V
Single N-Channel 30 V 11 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7805PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:4.5V
Single N-Channel 30 V 11 mOhm 22 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):11mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; Row Pitch:6.3mm; SMD Marking:IRF7805PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:4.5V
The three parts on the right have similar specifications to IRF7805PBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusPublishedInput Capacitance (Ciss) (Max) @ VdsFactory Lead TimeMountNumber of PinsWeightTransistor Element MaterialPbfree CodeNumber of TerminationsNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)DS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningResistanceAdditional FeatureVoltage - Rated DCTerminal PositionTerminal FormCurrent RatingPower DissipationOutput CurrentThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRF7805PBFSurface Mount8-SOIC (0.154, 3.90mm Width)8-SO-55°C~150°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TaN-Channel11mOhm @ 7A, 4.5V3V @ 250μA13A Ta31nC @ 5V30V4.5V±12VROHS3 Compliant-------------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)HEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA5.4A Tc22nC @ 4.5V20V2.7V 4.5V±12VNon-RoHS Compliant2000780pF @ 15V----------------------------------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--55°C~150°C TJTube-Active1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 50W TcN-Channel1.8 Ω @ 2A, 10V4V @ 250μA3.3A Tc20nC @ 10V400V10V±20VROHS3 Compliant2017410pF @ 25V12 WeeksThrough Hole36.000006gSILICONyes311SingleENHANCEMENT MODEDRAIN10 nsSWITCHING14ns13 ns30 ns3.3ATO-220AB20V400V9.01mm10.41mm4.7mmNo---------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)--55°C~150°C TJTape & Reel (TR)HEXFET®Active1 (Unlimited)MOSFET (Metal Oxide)2.5W TcP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA5.3A Ta25nC @ 10V20V4.5V 10V±12VROHS3 Compliant1997860pF @ 10V12 WeeksSurface Mount8-SILICON-81-SingleENHANCEMENT MODE-14 nsSWITCHING26ns68 ns100 ns-5.3A-12V-1.4986mm4.9784mm3.9878mmNo60mOhmLOGIC LEVEL COMPATIBLE-20VDUALGULL WING-5.3A2.5W5.3A-2.5V-20V-20V100 ns-2.5 VNo SVHCContains Lead, Lead Free
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