Infineon Technologies IRF7703
- Part Number:
- IRF7703
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586866-IRF7703
- Description:
- MOSFET P-CH 40V 6A 8-TSSOP
- Datasheet:
- IRF7703
Infineon Technologies IRF7703 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7703.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-TSSOP (0.173, 4.40mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMATTE TIN
- Additional FeatureHIGH RELIABILITY
- SubcategoryOther Transistors
- Voltage - Rated DC-40V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-6A
- Time@Peak Reflow Temperature-Max (s)30
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.5W Ta
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.5W
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs28m Ω @ 6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds5220pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6A Ta
- Gate Charge (Qg) (Max) @ Vgs62nC @ 4.5V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)6A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)6A
- Pulsed Drain Current-Max (IDM)24A
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF7703 Overview
A device's maximum input capacitance is 5220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 6A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 24A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF7703 Features
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 40V drain to source voltage (Vdss)
IRF7703 Applications
There are a lot of Infineon Technologies
IRF7703 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 5220pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 6A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 6A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 24A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 40V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
IRF7703 Features
a continuous drain current (ID) of 6A
based on its rated peak drain current 24A.
a 40V drain to source voltage (Vdss)
IRF7703 Applications
There are a lot of Infineon Technologies
IRF7703 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF7703 More Descriptions
MOSFET, P-CHANNEL, -40V, -6A, 28 mOhm, 41 nC Qg, TSSOP-8
-40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
MOSFET P-CH 40V 6A 8-TSSOP
-40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
MOSFET P-CH 40V 6A 8-TSSOP
The three parts on the right have similar specifications to IRF7703.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Pulsed Drain Current-Max (IDM)RoHS StatusLead FreeSurface MountHTS CodeJESD-30 CodeJEDEC-95 CodeDrain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Reach Compliance CodePin CountCase ConnectionFactory Lead TimeResistanceElement ConfigurationOutput CurrentTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageDrain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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IRF7703Surface MountSurface Mount8-TSSOP (0.173, 4.40mm Width)8SILICON-55°C~150°C TJTubeHEXFET®2005e3Obsolete1 (Unlimited)8EAR99MATTE TINHIGH RELIABILITYOther Transistors-40VMOSFET (Metal Oxide)DUALGULL WING260-6A30Not Qualified1SINGLE WITH BUILT-IN DIODE1.5W TaENHANCEMENT MODE1.5WP-ChannelSWITCHING28m Ω @ 6A, 10V3V @ 250μA5220pF @ 25V6A Ta62nC @ 4.5V40V4.5V 10V±20V6A20V6A24ANon-RoHS CompliantContains Lead-----------------------------
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003-Obsolete1 (Unlimited)8EAR99-LOGIC LEVEL COMPATIBLE--MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIED-NOT SPECIFIEDNot Qualified1SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODE-N-ChannelSWITCHING30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20V--7.3A58ANon-RoHS Compliant-YES8541.29.00.95R-PDSO-G8MS-012AA0.03Ohm30V70 mJ---------------------
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Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017-Obsolete1 (Unlimited)2---FET General Purpose Power-MOSFET (Metal Oxide)SINGLEGULL WING225-NOT SPECIFIEDNot Qualified1SINGLE WITH BUILT-IN DIODE3.1W Ta 50W TcENHANCEMENT MODE-N-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V3.3A--13ANon-RoHS Compliant---R-PSSO-G2--400V190 mJunknown3DRAIN------------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997-Active1 (Unlimited)8--LOGIC LEVEL COMPATIBLE--20VMOSFET (Metal Oxide)DUALGULL WING--5.3A--1-2.5W TcENHANCEMENT MODE2.5WP-ChannelSWITCHING60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12V-5.3A12V--ROHS3 CompliantContains Lead, Lead Free----------12 Weeks60mOhmSingle5.3A14 ns26ns68 ns100 ns-2.5V-20V-20V100 ns-2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNo
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