IRF7601PBF

Infineon Technologies IRF7601PBF

Part Number:
IRF7601PBF
Manufacturer:
Infineon Technologies
Ventron No:
2493110-IRF7601PBF
Description:
MOSFET N-CH 20V 5.7A MICRO-8
ECAD Model:
Datasheet:
IRF7601PBF

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Specifications
Infineon Technologies IRF7601PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7601PBF.
  • Mounting Type
    Surface Mount
  • Package / Case
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2005
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Additional Feature
    HIGH RELIABILITY
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    1.8W Ta
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    35m Ω @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id
    700mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    650pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    5.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    22nC @ 4.5V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.7V 4.5V
  • Vgs (Max)
    ±12V
  • Drain Current-Max (Abs) (ID)
    5.7A
  • Drain-source On Resistance-Max
    0.035Ohm
  • Pulsed Drain Current-Max (IDM)
    30A
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
IRF7601PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 650pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [5.7A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 30A.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.7V 4.5V).

IRF7601PBF Features
based on its rated peak drain current 30A.
a 20V drain to source voltage (Vdss)


IRF7601PBF Applications
There are a lot of Infineon Technologies
IRF7601PBF applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Product Comparison
The three parts on the right have similar specifications to IRF7601PBF.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Mount
    Number of Pins
    Supplier Device Package
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    Lead Free
    Factory Lead Time
    Weight
    Pbfree Code
    Number of Channels
    Element Configuration
    Case Connection
    Turn On Delay Time
    JEDEC-95 Code
    Height
    Length
    Width
    Output Current
    Threshold Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    View Compare
  • IRF7601PBF
    IRF7601PBF
    Surface Mount
    8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    2005
    Discontinued
    1 (Unlimited)
    8
    EAR99
    HIGH RELIABILITY
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    1.8W Ta
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    35m Ω @ 3.8A, 4.5V
    700mV @ 250μA
    650pF @ 15V
    5.7A Ta
    22nC @ 4.5V
    20V
    2.7V 4.5V
    ±12V
    5.7A
    0.035Ohm
    30A
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7233PBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tube
    HEXFET®
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    2.5W Ta
    -
    P-Channel
    -
    20mOhm @ 9.5A, 4.5V
    600mV @ 250μA
    6000pF @ 10V
    9.5A Ta
    74nC @ 5V
    12V
    2.5V 4.5V
    ±12V
    -
    -
    -
    -
    RoHS Compliant
    Surface Mount
    8
    8-SO
    20MOhm
    150°C
    -55°C
    -12V
    -9.5A
    2.5W
    540ns
    370 ns
    77 ns
    -9.5A
    12V
    -12V
    6nF
    20mOhm
    20 mΩ
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720LPBF
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    3.1W Ta 50W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    -
    -
    -
    400V
    ROHS3 Compliant
    Through Hole
    3
    -
    -
    -
    -
    -
    -
    -
    14ns
    13 ns
    30 ns
    3.3A
    20V
    -
    -
    -
    -
    No
    -
    12 Weeks
    6.000006g
    yes
    1
    Single
    DRAIN
    10 ns
    TO-220AB
    9.01mm
    10.41mm
    4.7mm
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    8
    -
    LOGIC LEVEL COMPATIBLE
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    1
    -
    2.5W Tc
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    20V
    4.5V 10V
    ±12V
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    8
    -
    60mOhm
    -
    -
    -20V
    -5.3A
    2.5W
    26ns
    68 ns
    100 ns
    -5.3A
    12V
    -20V
    -
    -
    -
    No
    Contains Lead, Lead Free
    12 Weeks
    -
    -
    -
    Single
    -
    14 ns
    -
    1.4986mm
    4.9784mm
    3.9878mm
    5.3A
    -2.5V
    -20V
    100 ns
    -2.5 V
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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