Infineon Technologies IRF7601PBF
- Part Number:
- IRF7601PBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2493110-IRF7601PBF
- Description:
- MOSFET N-CH 20V 5.7A MICRO-8
- Datasheet:
- IRF7601PBF
Infineon Technologies IRF7601PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7601PBF.
- Mounting TypeSurface Mount
- Package / Case8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Additional FeatureHIGH RELIABILITY
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1.8W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs35m Ω @ 3.8A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds650pF @ 15V
- Current - Continuous Drain (Id) @ 25°C5.7A Ta
- Gate Charge (Qg) (Max) @ Vgs22nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.7V 4.5V
- Vgs (Max)±12V
- Drain Current-Max (Abs) (ID)5.7A
- Drain-source On Resistance-Max0.035Ohm
- Pulsed Drain Current-Max (IDM)30A
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
IRF7601PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 650pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [5.7A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 30A.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.7V 4.5V).
IRF7601PBF Features
based on its rated peak drain current 30A.
a 20V drain to source voltage (Vdss)
IRF7601PBF Applications
There are a lot of Infineon Technologies
IRF7601PBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 650pF @ 15V maximal input capacitance.A device can conduct a maximum continuous current of [5.7A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 30A.The DS breakdown voltage should be maintained above 20V to maintain normal operation.To operate this transistor, you will need a 20V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (2.7V 4.5V).
IRF7601PBF Features
based on its rated peak drain current 30A.
a 20V drain to source voltage (Vdss)
IRF7601PBF Applications
There are a lot of Infineon Technologies
IRF7601PBF applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
The three parts on the right have similar specifications to IRF7601PBF.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeAdditional FeatureSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusMountNumber of PinsSupplier Device PackageResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCCurrent RatingPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningLead FreeFactory Lead TimeWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionTurn On Delay TimeJEDEC-95 CodeHeightLengthWidthOutput CurrentThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCView Compare
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IRF7601PBFSurface Mount8-TSSOP, 8-MSOP (0.118, 3.00mm Width)YESSILICON-55°C~150°C TJTubeHEXFET®2005Discontinued1 (Unlimited)8EAR99HIGH RELIABILITYFET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE1.8W TaENHANCEMENT MODEN-ChannelSWITCHING35m Ω @ 3.8A, 4.5V700mV @ 250μA650pF @ 15V5.7A Ta22nC @ 4.5V20V2.7V 4.5V±12V5.7A0.035Ohm30A20VROHS3 Compliant--------------------------------------
-
Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTubeHEXFET®2004Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------1-2.5W Ta-P-Channel-20mOhm @ 9.5A, 4.5V600mV @ 250μA6000pF @ 10V9.5A Ta74nC @ 5V12V2.5V 4.5V±12V----RoHS CompliantSurface Mount88-SO20MOhm150°C-55°C-12V-9.5A2.5W540ns370 ns77 ns-9.5A12V-12V6nF20mOhm20 mΩNoLead Free-----------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTube-2017Active1 (Unlimited)3---MOSFET (Metal Oxide)------1-3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V---400VROHS3 CompliantThrough Hole3-------14ns13 ns30 ns3.3A20V----No-12 Weeks6.000006gyes1SingleDRAIN10 nsTO-220AB9.01mm10.41mm4.7mm------
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Surface Mount8-SOIC (0.154, 3.90mm Width)-SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)8-LOGIC LEVEL COMPATIBLE-MOSFET (Metal Oxide)DUALGULL WING----1-2.5W TcENHANCEMENT MODEP-ChannelSWITCHING60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V20V4.5V 10V±12V----ROHS3 CompliantSurface Mount8-60mOhm---20V-5.3A2.5W26ns68 ns100 ns-5.3A12V-20V---NoContains Lead, Lead Free12 Weeks---Single-14 ns-1.4986mm4.9784mm3.9878mm5.3A-2.5V-20V100 ns-2.5 VNo SVHC
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