Infineon Technologies IRF7459
- Part Number:
- IRF7459
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071561-IRF7459
- Description:
- MOSFET N-CH 20V 12A 8-SOIC
- Datasheet:
- IRF7459
Infineon Technologies IRF7459 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7459.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Supplier Device Package8-SO
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC20V
- TechnologyMOSFET (Metal Oxide)
- Current Rating12A
- Power Dissipation-Max2.5W Ta
- Power Dissipation2.5W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2480pF @ 10V
- Current - Continuous Drain (Id) @ 25°C12A Ta
- Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
- Rise Time4.5ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.8V 10V
- Vgs (Max)±12V
- Continuous Drain Current (ID)12A
- Drain to Source Breakdown Voltage20V
- Input Capacitance2.48nF
- Rds On Max9 mΩ
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF7459 Description
IRF7459 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF7459 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7459 has 8 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of IRF7459 is 12A and its Drain to Source Voltage (Vdss) is 20V.
IRF7459 Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
IRF7459 Applications
High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
High-Frequency Buck Converters for Computer Processor Power
IRF7459 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF7459 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7459 has 8 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of IRF7459 is 12A and its Drain to Source Voltage (Vdss) is 20V.
IRF7459 Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current
IRF7459 Applications
High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
High-Frequency Buck Converters for Computer Processor Power
IRF7459 More Descriptions
Trans MOSFET N-CH 20V 12A 8-Pin SOIC
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 20V, 10A, 9 mOhm, 23 nC Qg, SO-8
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 20V, 10A, 9 mOhm, 23 nC Qg, SO-8
The three parts on the right have similar specifications to IRF7459.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingPower Dissipation-MaxPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain to Source Breakdown VoltageInput CapacitanceRds On MaxRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationFactory Lead TimeResistanceAdditional FeatureElement ConfigurationOutput CurrentTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Dual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningView Compare
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IRF7459Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO-55°C~150°C TJTubeHEXFET®2007Obsolete1 (Unlimited)150°C-55°C20VMOSFET (Metal Oxide)12A2.5W Ta2.5WN-Channel9mOhm @ 12A, 10V2V @ 250μA2480pF @ 10V12A Ta35nC @ 4.5V4.5ns20V2.8V 10V±12V12A20V2.48nF9 mΩNon-RoHS CompliantContains Lead---------------------------------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTape & Reel (TR)-2017Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-3.1W Ta 50W Tc-N-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V3.3A---Non-RoHS Compliant-SILICON2FET General Purpose PowerSINGLEGULL WING225unknownNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A400V190 mJ-------------------
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK-55°C~150°C TJTube-2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V2A-170pF3.6 ΩNon-RoHS Compliant--------------------3.1W------------------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--55°C~150°C TJTape & Reel (TR)HEXFET®1997Active1 (Unlimited)---20VMOSFET (Metal Oxide)-5.3A2.5W Tc2.5WP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V-5.3A-20V--ROHS3 CompliantContains Lead, Lead FreeSILICON8-DUALGULL WING------1-ENHANCEMENT MODE-SWITCHING----12 Weeks60mOhmLOGIC LEVEL COMPATIBLESingle5.3A14 ns68 ns100 ns-2.5V12V-20V100 ns-2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNo
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