IRF7459

Infineon Technologies IRF7459

Part Number:
IRF7459
Manufacturer:
Infineon Technologies
Ventron No:
3071561-IRF7459
Description:
MOSFET N-CH 20V 12A 8-SOIC
ECAD Model:
Datasheet:
IRF7459

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Part Pictures
  • IRF7459 Detail Images
Specifications
Infineon Technologies IRF7459 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7459.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Supplier Device Package
    8-SO
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2007
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    20V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    12A
  • Power Dissipation-Max
    2.5W Ta
  • Power Dissipation
    2.5W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    9mOhm @ 12A, 10V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2480pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    12A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 4.5V
  • Rise Time
    4.5ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.8V 10V
  • Vgs (Max)
    ±12V
  • Continuous Drain Current (ID)
    12A
  • Drain to Source Breakdown Voltage
    20V
  • Input Capacitance
    2.48nF
  • Rds On Max
    9 mΩ
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF7459 Description
IRF7459 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 20V. The operating temperature of the IRF7459 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7459 has 8 pins and it is available in Tube packaging way. The Continuous Drain Current (ID) of IRF7459 is 12A and its Drain to Source Voltage (Vdss) is 20V.

IRF7459 Features
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V VGS
Fully Characterized Avalanche Voltage and Current

IRF7459 Applications
High-Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
High-Frequency Buck Converters for Computer Processor Power
IRF7459 More Descriptions
Trans MOSFET N-CH 20V 12A 8-Pin SOIC
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 20V, 10A, 9 mOhm, 23 nC Qg, SO-8
IRF7459 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRF7459.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Power Dissipation-Max
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Rds On Max
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Max Power Dissipation
    Factory Lead Time
    Resistance
    Additional Feature
    Element Configuration
    Output Current
    Turn On Delay Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    View Compare
  • IRF7459
    IRF7459
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -55°C~150°C TJ
    Tube
    HEXFET®
    2007
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    20V
    MOSFET (Metal Oxide)
    12A
    2.5W Ta
    2.5W
    N-Channel
    9mOhm @ 12A, 10V
    2V @ 250μA
    2480pF @ 10V
    12A Ta
    35nC @ 4.5V
    4.5ns
    20V
    2.8V 10V
    ±12V
    12A
    20V
    2.48nF
    9 mΩ
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    3.1W Ta 50W Tc
    -
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    3.3A
    -
    -
    -
    Non-RoHS Compliant
    -
    SILICON
    2
    FET General Purpose Power
    SINGLE
    GULL WING
    225
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    400V
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF710L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -55°C~150°C TJ
    Tube
    -
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    2A
    -
    170pF
    3.6 Ω
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.1W
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    Active
    1 (Unlimited)
    -
    -
    -20V
    MOSFET (Metal Oxide)
    -5.3A
    2.5W Tc
    2.5W
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    -5.3A
    -20V
    -
    -
    ROHS3 Compliant
    Contains Lead, Lead Free
    SILICON
    8
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    -
    -
    12 Weeks
    60mOhm
    LOGIC LEVEL COMPATIBLE
    Single
    5.3A
    14 ns
    68 ns
    100 ns
    -2.5V
    12V
    -20V
    100 ns
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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