Infineon Technologies IRF7452
- Part Number:
- IRF7452
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2492445-IRF7452
- Description:
- MOSFET N-CH 100V 4.5A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7452
Infineon Technologies IRF7452 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7452.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2001
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- HTS Code8541.29.00.95
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)245
- Time@Peak Reflow Temperature-Max (s)30
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs60m Ω @ 2.7A, 10V
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds930pF @ 25V
- Current - Continuous Drain (Id) @ 25°C4.5A Ta
- Gate Charge (Qg) (Max) @ Vgs50nC @ 10V
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)4.5A
- Drain-source On Resistance-Max0.06Ohm
- Pulsed Drain Current-Max (IDM)36A
- DS Breakdown Voltage-Min100V
- Avalanche Energy Rating (Eas)200 mJ
- RoHS StatusNon-RoHS Compliant
IRF7452 Description
IRF7452 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of the IRF7452 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7452 has 8 pins and it is available in Tube packaging way.
IRF7452 Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7452 Applications
High frequency DC-DC converters
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7452 is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 100V. The operating temperature of the IRF7452 is -55°C~150°C TJ and its maximum power dissipation is 2.5W Ta. IRF7452 has 8 pins and it is available in Tube packaging way.
IRF7452 Features
Low Gate to Drain Charge to Reduce Switching Losses
Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
Fully Characterized Avalanche Voltage and Current
IRF7452 Applications
High frequency DC-DC converters
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7452 More Descriptions
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET N-CH 100V 4.5A 8-SOIC
MOSFET N-CH 100V 4.5A 8-SOIC
The three parts on the right have similar specifications to IRF7452.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusAdditional FeatureMountSubcategoryReach Compliance CodePin CountCase ConnectionContinuous Drain Current (ID)Factory Lead TimeNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningView Compare
-
IRF7452Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTubeHEXFET®2001e0Obsolete1 (Unlimited)8EAR99Tin/Lead (Sn/Pb)8541.29.00.95MOSFET (Metal Oxide)DUALGULL WING24530R-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-ChannelSWITCHING60m Ω @ 2.7A, 10V5.5V @ 250μA930pF @ 25V4.5A Ta50nC @ 10V100V10V±30VMS-012AA4.5A0.06Ohm36A100V200 mJNon-RoHS Compliant----------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003-Obsolete1 (Unlimited)8EAR99-8541.29.00.95MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VMS-012AA7.3A0.03Ohm58A30V70 mJNon-RoHS CompliantLOGIC LEVEL COMPATIBLE---------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017-Obsolete1 (Unlimited)2---MOSFET (Metal Oxide)SINGLEGULL WING225NOT SPECIFIEDR-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V---13A400V190 mJNon-RoHS Compliant-Surface MountFET General Purpose Powerunknown3DRAIN3.3A---------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTube-2017-Active1 (Unlimited)3---MOSFET (Metal Oxide)------1-3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VTO-220AB---400V-ROHS3 Compliant-Through Hole---DRAIN3.3A12 Weeks36.000006gyes1Single10 ns14ns13 ns30 ns20V9.01mm10.41mm4.7mmNo
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 January 2024
The Best Tutorial for ISO3082DWR
Ⅰ. Overview of ISO3082DWRⅡ. Technical parameters of ISO3082DWRⅢ. What are the characteristics of ISO3082DWR?Ⅳ. How does ISO3082DWR work?Ⅴ. ISO3082DWR symbol, footprint and pin configurationⅥ. Layout principles of ISO3082DWRⅦ.... -
22 January 2024
What You Need to Know About the MMBT3904 Transistor
Ⅰ. MMBT3904 descriptionⅡ. What is the pin configuration of MMBT3904?Ⅲ. Specifications of MMBT3904Ⅳ. Typical circuit schematic of MMBT3904Ⅴ. Where is MMBT3904 used?Ⅵ. Absolute maximum ratings of MMBT3904Ⅶ. What... -
22 January 2024
LM317T Voltage Regulator: Functions, Usage, Applications and LM317T vs LM317
Ⅰ. Overview of LM317TⅡ. What functions does LM317T have?Ⅲ. Technical parameters of LM317T voltage regulatorⅣ. Circuit of LM317T voltage regulatorⅤ. What is the difference between LM317T and LM317?Ⅵ.... -
23 January 2024
IRF3205 MOSFET Specifications, Package, Working Principle and Applications
Ⅰ. Overview of IRF3205 MOSFETⅡ. Symbol, footprint and pin configuration of IRF3205 MOSFETⅢ. Specifications of IRF3205 MOSFETⅣ. Package of IRF3205 MOSFETⅤ. Working principle and structure of IRF3205 MOSFETⅥ....
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.