Infineon Technologies IRF7451TR

Name: IRF7451TR
Brand: Infineon Technologies
SKU: 2853473-IRF7451TR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7451TR

Manufacturer:: Infineon Technologies

Ventron No:: 2853473-IRF7451TR

Description:: MOSFET N-CH 150V 3.6A 8-SOIC

ECAD Model:

Datasheet:: IRF7451TR

Specifications

Infineon Technologies IRF7451TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7451TR.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
90m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
990pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.6A Ta
Gate Charge (Qg) (Max) @ Vgs
41nC @ 10V
Drain to Source Voltage (Vdss)
150V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
3.6A
Drain-source On Resistance-Max
0.09Ohm
Pulsed Drain Current-Max (IDM)
28A
DS Breakdown Voltage-Min
150V
Avalanche Energy Rating (Eas)
210 mJ
RoHS Status
Non-RoHS Compliant

Description

IRF7451TR Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 210 mJ.A device's maximal input capacitance is 990pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3.6A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 28A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 150V.This transistor requires a 150V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF7451TR Features
the avalanche energy rating (Eas) is 210 mJ
based on its rated peak drain current 28A.
a 150V drain to source voltage (Vdss)

IRF7451TR Applications
There are a lot of Infineon Technologies
IRF7451TR applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF7451TR More Descriptions

150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 150V, 3.6A, 90 mOhm, 28 nC Qg, SO-8
MOSFET N-CH 150V 3.6A 8-SOIC

Product Comparison

The three parts on the right have similar specifications to IRF7451TR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Published

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

Lead Free

Additional Feature

HTS Code

Max Power Dissipation

View Compare
IRF7451TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

e3

Obsolete

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

N-Channel

SWITCHING

90m Ω @ 2.2A, 10V

5.5V @ 250μA

990pF @ 25V

3.6A Ta

41nC @ 10V

150V

10V

±30V

MS-012AA

3.6A

0.09Ohm

28A

150V

210 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7233PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tube

HEXFET®

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

2.5W Ta

-

P-Channel

-

20mOhm @ 9.5A, 4.5V

600mV @ 250μA

6000pF @ 10V

9.5A Ta

74nC @ 5V

12V

2.5V 4.5V

±12V

-

-

-

-

-

-

RoHS Compliant

Surface Mount

8

8-SO

2004

20MOhm

150°C

-55°C

-12V

-9.5A

2.5W

540ns

370 ns

77 ns

-9.5A

12V

-12V

6nF

20mOhm

20 mΩ

No

Lead Free

-

-

-

IRF7451TR vs IRF7233PBF
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

-

Obsolete

1 (Unlimited)

8

EAR99

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

Non-RoHS Compliant

-

-

-

2003

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

LOGIC LEVEL COMPATIBLE

8541.29.00.95

-

IRF7451TR vs IRF7201TR
IRF710L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

400V

10V

±20V

-

-

-

-

-

-

Non-RoHS Compliant

Through Hole

-

I2PAK

2016

-

-

-

-

-

-

-

-

-

2A

-

-

170pF

-

3.6 Ω

-

-

-

-

3.1W

IRF7451TR vs IRF710L

Certification

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IRF7451TR Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	1 $0.9381 10 $0.7076 25 $0.6369 100 $0.5732 250 $0.5712 500 $0.4886 1000 $0.4495 3000 $0.4046
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8SOIC RoHS: Compliant	6205	1 $1.49 10 $1.317 100 $1.0409 500 $0.80726 1000 $0.63731
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8SOIC RoHS: Compliant	6205	1 $1.49 10 $1.317 100 $1.0409 500 $0.80726 1000 $0.63731
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8-SOIC RoHS: Compliant	4000	4000 $0.5775
IRF7451TR DISTI #IRF7451TR	Infineon Technologies AG	MOSFET N-CH 150V 3.6A 8-SOIC RoHS: Not Compliant	0
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	17 $0.6976 25 $0.6278 100 $0.5649 250 $0.5084 500 $0.4886 1000 $0.4495 3000 $0.4046
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R - Cut T RoHS: Compliant	2980	1 $0.4559 40 $0.4549 100 $0.4539 200 $0.4519 500 $0.4509 1000 $0.4499 2000 $0.4489
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R - Tape RoHS: Compliant	4000	4000 $0.4319 8000 $0.4159 16000 $0.4009 24000 $0.3879 40000 $0.3809
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R (Alt: I RoHS: Compliant	0	4000 $0.35757 8000 $0.34764 12000 $0.33824 20000 $0.32934 40000 $0.32506 100000 $0.3209 200000 $0.31684
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC, Transistor Polari	2196	1 $1.24 10 $1.05 25 $0.969 50 $0.888 100 $0.807 250 $0.76 500 $0.713 1000 $0.563
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET, 150V, 3.6A, 90 MOHM, 28 NC QG, SO-8 RoHS: Compliant	0	4000 $1.61 8000 $1.578 20000 $1.53 40000 $1.465 100000 $1.369
IRF7451TRPBF DISTI #IRF7451TRPBF	International Rectifier	Power Field-Effect Transistor, 3.6A I(D), 150V, 0. RoHS: Compliant	12000	1 $0.62 25 $0.57 100 $0.55 500 $0.53 1000 $0.5
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET MOSFT 150V 3.6A 90mOhm 28nC RoHS: Compliant	2486	1 $1.24 10 $1.05 100 $0.807 500 $0.713 1000 $0.563
IRF7451TRPBF DISTI #IRF7451TRPBF	International Rectifier		3448
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 150V 3.6A 8-Pin SOIC T/R RoHS: Compliant	4531	10 $0.7076 25 $0.6369 100 $0.5732 250 $0.5712
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC RoHS: Compliant	2236	5 $0.891 25 $0.803 100 $0.617 250 $0.581 500 $0.544
IRF7451TRPBF DISTI #IRF7451TRPBF	Infineon Technologies AG	MOSFET, N-CH, 150V, 3.6A, SOIC RoHS: Compliant	2196	1 $1.97 10 $1.66 100 $1.29 500 $1.13 1000 $0.891 4000 $0.801

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Infineon Technologies IRF7451TR

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