Infineon Technologies IRF7416TRPBF

Name: IRF7416TRPBF
Brand: Infineon Technologies
SKU: 2482375-IRF7416TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7416TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482375-IRF7416TRPBF

Description:: MOSFET P-CH 30V 10A 8-SOIC

ECAD Model:

Datasheet:: IRF7416TRPBF

Specifications

Infineon Technologies IRF7416TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7416TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2005
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
20mOhm
Additional Feature
ULTRA LOW RESISTANCE
Voltage - Rated DC
-30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-10A
Number of Elements
1
Row Spacing
6.3 mm
Number of Channels
1
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
18 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Rise Time
49ns
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
60 ns
Turn-Off Delay Time
59 ns
Continuous Drain Current (ID)
-10A
Threshold Voltage
-2.04V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-30V
Pulsed Drain Current-Max (IDM)
45A
Dual Supply Voltage
-30V
Avalanche Energy Rating (Eas)
370 mJ
Recovery Time
85 ns
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-20 V
Height
1.75mm
Length
4.9784mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF7416TRPBF Description
IRF7416TRPBF is a -30V Single P-Channel HEXFET Power MOSFET. The Infineon IRF7416TRPBF features benchmark on-state resistance (RDS(on)) and high package current ratings for high-power DC motors, power tools, industrial batteries, and power supply applications. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor IRF7416TRPBF is in the SOIC-8 package with 2.5W power dissipation.

IRF7416TRPBF Features
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature
P-Channel MOSFET

IRF7416TRPBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits

IRF7416TRPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS /-20V;-55
Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R - Product that comes on tape, but is not reeled
Single P-Channel 30 V 0.035 Ohm 92 nC HEXFET® Power Mosfet - SOIC-8
30V 10A 20m¦¸@10V,5.6A 2.5W 2.04V@250¦ÌA P Channel SOIC-8_150mil MOSFETs ROHS
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Continuous Drain Current, Id:-10A; On Resistance, Rds(on):0.02ohm; Package/Case:8-SOIC; Power Dissipation, Pd:2.5W; Current, Idm pulse:45A ;RoHS Compliant: Yes
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, 30V, SO-8; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:30V; Current, Id Cont:10A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:45A; External Depth:5.2mm; External Length / Height:1.75mm; No. of Pins:8; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation:2.5W; Power, Pd:2.5W; Row Pitch:6.3mm; SMD Marking:F7416; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Rds Measurement:10V; Voltage, Vds:30V; Voltage, Vds Max:30V; Width, External:4.05mm

Product Comparison

The three parts on the right have similar specifications to IRF7416TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Additional Feature

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Row Spacing

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

Weight

Pbfree Code

Case Connection

JEDEC-95 Code

DS Breakdown Voltage-Min

View Compare
IRF7416TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2005

e3

Active

1 (Unlimited)

8

SMD/SMT

EAR99

20mOhm

ULTRA LOW RESISTANCE

-30V

MOSFET (Metal Oxide)

DUAL

GULL WING

-10A

1

6.3 mm

1

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

18 ns

P-Channel

SWITCHING

20m Ω @ 5.6A, 10V

1V @ 250μA

1700pF @ 25V

10A Ta

92nC @ 10V

49ns

30V

4.5V 10V

±20V

60 ns

59 ns

-10A

-2.04V

20V

-30V

45A

-30V

370 mJ

85 ns

150°C

-20 V

1.75mm

4.9784mm

3.9878mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
IRF7207TR

Infineon Technologies

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

2.5W Tc

-

-

-

-

P-Channel

-

60m Ω @ 5.4A, 4.5V

700mV @ 250μA

780pF @ 15V

5.4A Tc

22nC @ 4.5V

-

20V

2.7V 4.5V

±12V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

IRF7416TRPBF vs IRF7207TR
IRF710L

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

N-Channel

-

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

-

400V

10V

±20V

-

-

2A

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

I2PAK

3.1W

170pF

3.6 Ω

-

-

-

-

-

IRF7416TRPBF vs IRF710L
IRF720LPBF

Vishay Siliconix

12 Weeks

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~150°C TJ

Tube

-

2017

-

Active

1 (Unlimited)

3

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

1

-

1

3.1W Ta 50W Tc

Single

ENHANCEMENT MODE

-

10 ns

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

14ns

400V

10V

±20V

13 ns

30 ns

3.3A

-

20V

-

-

-

-

-

-

-

9.01mm

10.41mm

4.7mm

-

No

ROHS3 Compliant

-

-

-

-

-

6.000006g

yes

DRAIN

TO-220AB

400V

IRF7416TRPBF vs IRF720LPBF

Certification

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IRF7416TRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	1198	1 $0.6576 10 $0.5822 25 $0.5799 100 $0.4733 250 $0.472 500 $0.4274 1000 $0.3524
IRF7416TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 10A 8-SOIC RoHS: Compliant	14115	1 $1.09 10 $0.973 100 $0.7801 500 $0.61648 1000 $0.4975
IRF7416TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 10A 8-SOIC RoHS: Compliant	14115	1 $1.09 10 $0.973 100 $0.7801 500 $0.61648 1000 $0.4975
IRF7416TRPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 30V 10A 8-SOIC RoHS: Compliant	12000	4000 $0.45413
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	24000	4000 $0.2784
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	7720	19 $1.1908 50 $0.8007 100 $0.6987 200 $0.677
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	3944	28 $0.9212
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	1198	22 $0.5822 25 $0.5799 100 $0.4733 250 $0.472 500 $0.4274 1000 $0.3524
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R (Alt: SP0 RoHS: Compliant	28000	4000 $0.2989 8000 $0.2939 16000 $0.2929 24000 $0.2919 40000 $0.2919
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R - Tape an RoHS: Compliant	0	4000 $0.3719 8000 $0.3579 16000 $0.3449 24000 $0.3339 40000 $0.3279
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R (Alt: IRF RoHS: Compliant	0
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R - Cut TR RoHS: Compliant	0	1 $0.4779 40 $0.4609 100 $0.4449 200 $0.4299 500 $0.4159 1000 $0.4029 2000 $0.3909
IRF7416TRPBF-1 DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R - Tape an RoHS: Compliant	0
IRF7416TRPBF-1 DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R (Alt: IRF RoHS: Compliant	0
IRF7416TRPBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, 10A, Transistor Polarity:P Chan	0	1 $0.87 10 $0.735 25 $0.678 50 $0.622 100 $0.565 500 $0.499 1000 $0.394
IRF7416TRPBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS ROHS COMPLIANT: YES	0
IRF7416TRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.02Oh RoHS: Compliant	0	4000 $1.105
IRF7416TRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT PCh -30V -10A 20mOhm 61nC RoHS: Compliant	13791	1 $0.87 10 $0.735 100 $0.565 500 $0.499 1000 $0.394 4000 $0.35 8000 $0.337
IRF7416TRPBF DISTI #	Infineon Technologies AG	Single P-Channel 30 V 0.035 Ohm 92 nC HEXFET Power RoHS: Compliant	12000	4000 $0.325
IRF7416TRPBF DISTI #	Infineon Technologies AG	Single P-Channel 30 V 0.035 Ohm 92 nC HEXFET Power RoHS: Compliant	4000	1 $0.455 250 $0.39 500 $0.38 1000 $0.375 2500 $0.36
IRF7416TRPBF DISTI #	International Rectifier		15	7 $0.75
IRF7416TRPBF DISTI #	International Rectifier	10 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET	3090	1 $0.92 622 $0.2875 2784 $0.253
IRF7416TRPBF DISTI #	TT Electronics Resistors	10 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET	31	1 $0.92 6 $0.69 30 $0.46
IRF7416TRPBF DISTI #	International Rectifier	10 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET	12	1 $1 6 $0.8
IRF7416TRPBF DISTI #	Infineon Technologies AG	P-CH 30V 10A 20mOhm SO8 RoHS: Compliant	4000	4000 $0.4549 8000 $0.4289 12000 $0.4029 16000 $0.3639 24000 $0.3509
IRF7416TRPBF DISTI #	INFINEON/IR	SO-8 RoHS: Compliant	5760	4000 $0.3114 5760 $0.2907
IRF7416TRPBF DISTI #	Infineon Technologies AG	-30V,20m,-10A,P-Channel Power MOSFET	2750	1 $0.61 100 $0.51 500 $0.45 1000 $0.44
IRF7416TRPBF DISTI #	Infineon Technologies AG	P-Ch 30V 10A 2,5W 0,02R SO8 RoHS: Compliant	0	50 $0.285 100 $0.245 500 $0.225 2000 $0.2165
IRF7416TRPBF DISTI #		INSTOCK	8000
IRF7416TRPBF DISTI #	Infineon Technologies AG	INSTOCK	2898
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	3944	5 $0.737 10 $0.688 50 $0.578 100 $0.472
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	24000	4000 $0.431
IRF7416TRPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC T/R RoHS: Compliant	7720	5 $1.07 10 $0.934 50 $0.628 100 $0.548

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Infineon Technologies IRF7416TRPBF

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