Infineon Technologies IRF7416PBF

Name: IRF7416PBF
Brand: Infineon Technologies
SKU: 2479689-IRF7416PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7416PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2479689-IRF7416PBF

Description:: MOSFET P-CH 30V 10A 8-SOIC

ECAD Model:

Datasheet:: IRF7416PBF

Specifications

Infineon Technologies IRF7416PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7416PBF.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
2005
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
20m Ω @ 5.6A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1700pF @ 25V
Current - Continuous Drain (Id) @ 25°C
10A Ta
Gate Charge (Qg) (Max) @ Vgs
92nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MS-012AA
Drain Current-Max (Abs) (ID)
10A
Drain-source On Resistance-Max
0.02Ohm
Pulsed Drain Current-Max (IDM)
45A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
370 mJ
RoHS Status
ROHS3 Compliant

Description

IRF7416PBF Description IRF7416PBF is a 30V Single P-Channel HEXFET Power MOSFET in a SO-8 package. IRF7416PBF MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7416PBF Features Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100KHz
Industry-standard surface-mount power package
Capable of being wave-soldered
IRF7416PBF Applications Relay driver
High-speed line driver
High-side load switch
Switching circuits

IRF7416PBF More Descriptions

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.02Ohm;ID -10A;SO-8;PD 2.5W;VGS /-20V;-55
Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55 150 deg.C; SMD; SO8
Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-10A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:45A; Row Pitch:6.3mm; SMD Marking:F7416; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

Product Comparison

The three parts on the right have similar specifications to IRF7416PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Mount

Number of Pins

Supplier Device Package

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

Lead Free

Factory Lead Time

Weight

Pbfree Code

Number of Channels

Element Configuration

Case Connection

Turn On Delay Time

Height

Length

Width

View Compare
IRF7416PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

2005

e3

Discontinued

1 (Unlimited)

8

EAR99

Matte Tin (Sn)

HIGH RELIABILITY

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta

ENHANCEMENT MODE

P-Channel

SWITCHING

20m Ω @ 5.6A, 10V

1V @ 250μA

1700pF @ 25V

10A Ta

92nC @ 10V

30V

4.5V 10V

±20V

MS-012AA

10A

0.02Ohm

45A

30V

370 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7233PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

2.5W Ta

-

P-Channel

-

20mOhm @ 9.5A, 4.5V

600mV @ 250μA

6000pF @ 10V

9.5A Ta

74nC @ 5V

12V

2.5V 4.5V

±12V

-

-

-

-

-

-

RoHS Compliant

Surface Mount

8

8-SO

20MOhm

150°C

-55°C

-12V

-9.5A

2.5W

540ns

370 ns

77 ns

-9.5A

12V

-12V

6nF

20mOhm

20 mΩ

No

Lead Free

-

-

-

-

-

-

-

-

-

-

IRF7416PBF vs IRF7233PBF
IRF7207TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2000

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

2.5W Tc

-

P-Channel

-

60m Ω @ 5.4A, 4.5V

700mV @ 250μA

780pF @ 15V

5.4A Tc

22nC @ 4.5V

20V

2.7V 4.5V

±12V

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7416PBF vs IRF7207TR
IRF720LPBF

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

SILICON

-55°C~150°C TJ

Tube

-

2017

-

Active

1 (Unlimited)

3

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

3.1W Ta 50W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

400V

10V

±20V

TO-220AB

-

-

-

400V

-

ROHS3 Compliant

Through Hole

3

-

-

-

-

-

-

-

14ns

13 ns

30 ns

3.3A

20V

-

-

-

-

No

-

12 Weeks

6.000006g

yes

1

Single

DRAIN

10 ns

9.01mm

10.41mm

4.7mm

IRF7416PBF vs IRF720LPBF

Certification

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IRF7416PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC Tube	5930	1 $0.6323 10 $0.5488 100 $0.4411 500 $0.3945 1000 $0.3437 2500 $0.3154 10000 $0.3136
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET P-CH 30V 10A 8-SOIC RoHS: Compliant	1526	1 $1.11 10 $0.983 100 $0.7765 500 $0.60218 1000 $0.47541
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC Tube	5850	95 $0.317 1425 $0.2839 2850 $0.2717 4275 $0.2605
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC Tube	2230	23 $0.6323
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.02Oh RoHS: Compliant	43	1 $0.891 10 $0.787 100 $0.686 500 $0.594 1000 $0.524
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	Single P-Channel 30 V 0.02 Ohm 61 nC HEXFET Power RoHS: Compliant	715	25 $0.43 1000 $0.38
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET 1 P-CH -30V HEXFET 20mOhms 61nC RoHS: Compliant	4355	1 $0.91 10 $0.772 100 $0.593 500 $0.524 1000 $0.414
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET P-CHANNEL 30V 10A HEXFET SOIC8, EA	444	1 $2 30 $0.4 100 $0.38
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET P-CHANNEL 30V 10A HEXFET SOIC8, TU	711	30 $0.4 100 $0.38
IRF7416PBF DISTI #IRF7416PBF	International Rectifier		7
IRF7416PBF DISTI #IRF7416PBF	International Rectifier		43	7 $0.75 28 $0.4875
IRF7416PBF DISTI #IRF7416PBF	International Rectifier	MOSFET Transistor, P-Channel, SO	34	1 $1 6 $0.8 26 $0.5
IRF7416PBF DISTI #IRF7416PBF	International Rectifier	RoHS: Compliant	25
IRF7416PBF DISTI #IRF7416PBF		INSTOCK	630
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET, P, -30V, -10A, SO-8 RoHS: Compliant	1249	1 $1.44 10 $1.22 100 $0.939 500 $0.83 1000 $0.656 2500 $0.581 10000 $0.559
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 10A 8-Pin SOIC Tube RoHS: Compliant	5885	5 $1.83 25 $0.732 50 $0.666 100 $0.594 500 $0.488 1000 $0.448
IRF7416PBF DISTI #IRF7416PBF	Infineon Technologies AG	MOSFET, P, -30V, -10A, SO-8 RoHS: Compliant	3823	5 $0.655 25 $0.4 100 $0.381 250 $0.38 500 $0.379

IRF7416~~(10)~~
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Infineon Technologies IRF7416PBF

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