Infineon Technologies IRF7413ZTRPBF

Name: IRF7413ZTRPBF
Brand: Infineon Technologies
SKU: 3586011-IRF7413ZTRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7413ZTRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586011-IRF7413ZTRPBF

Description:: MOSFET N-CH 30V 13A 8-SOIC

ECAD Model:

Datasheet:: IRF7413ZTRPBF

Specifications

Infineon Technologies IRF7413ZTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7413ZTRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2005
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
10MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
30V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
13A
Number of Elements
1
Row Spacing
6.3 mm
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
8.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 13A, 10V
Vgs(th) (Max) @ Id
2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1210pF @ 15V
Current - Continuous Drain (Id) @ 25°C
13A Ta
Gate Charge (Qg) (Max) @ Vgs
14nC @ 4.5V
Rise Time
6.3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
3.8 ns
Turn-Off Delay Time
11 ns
Continuous Drain Current (ID)
13A
Threshold Voltage
1.8V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Dual Supply Voltage
30V
Avalanche Energy Rating (Eas)
32 mJ
Recovery Time
36 ns
Nominal Vgs
1.8 V
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF7413ZTRPBF Description
IRF7413ZTRPBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7413ZTRPBF is -55°C~150°C TJ and its maximum power dissipation is 2.5W. IRF7413ZTRPBF has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of the IRF7413ZTRPBF is 8.7 ns and its Turn-Off Delay Time is 11 ns.

IRF7413ZTRPBF Features
Ultra-Low Gate Impedance
Very Low RDS(on)
Fully Characterized Avalanche Voltage and Current
100% Tested for RG
Lead-Free

IRF7413ZTRPBF Applications
Control FET for Notebook Processor Power
Control and Synchronous Rectifier MOSFET for Graphics Cards and POL Converters in Computing, Networking and Telecommunication Systems

IRF7413ZTRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 8 Milliohms;ID 13A;SO-8;PD 2.5W;VGS /-20V
Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET® Power Mosfet - SOIC-8
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor MOSFET N-CH 30V 13A 8-Pin SOIC T/RAvnet Japan
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:13A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:8-SO ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 13 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 3.8 / Rise Time ns = 6.3 / Turn-OFF Delay Time ns = 11 / Turn-ON Delay Time ns = 8.7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Product Comparison

The three parts on the right have similar specifications to IRF7413ZTRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Current Rating

Number of Elements

Row Spacing

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Additional Feature

HTS Code

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Reach Compliance Code

Pin Count

Case Connection

Weight

Pbfree Code

Number of Channels

View Compare
IRF7413ZTRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2005

Active

1 (Unlimited)

8

SMD/SMT

EAR99

10MOhm

FET General Purpose Power

30V

MOSFET (Metal Oxide)

DUAL

GULL WING

13A

1

6.3 mm

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

8.7 ns

N-Channel

SWITCHING

10m Ω @ 13A, 10V

2.25V @ 25μA

1210pF @ 15V

13A Ta

14nC @ 4.5V

6.3ns

4.5V 10V

±20V

3.8 ns

11 ns

13A

1.8V

20V

30V

30V

32 mJ

36 ns

1.8 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

Obsolete

1 (Unlimited)

8

-

EAR99

-

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

1

-

2.5W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

70 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

LOGIC LEVEL COMPATIBLE

8541.29.00.95

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

30V

MS-012AA

7.3A

0.03Ohm

58A

30V

-

-

-

-

-

-

IRF7413ZTRPBF vs IRF7201TR
IRF720STRL

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

2017

Obsolete

1 (Unlimited)

2

-

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

SINGLE

GULL WING

-

1

-

3.1W Ta 50W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

-

10V

±20V

-

-

3.3A

-

-

-

-

190 mJ

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

225

NOT SPECIFIED

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

400V

-

-

-

13A

400V

unknown

3

DRAIN

-

-

-

IRF7413ZTRPBF vs IRF720STRL
IRF720LPBF

Vishay Siliconix

12 Weeks

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~150°C TJ

Tube

-

2017

Active

1 (Unlimited)

3

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

1

-

3.1W Ta 50W Tc

Single

ENHANCEMENT MODE

-

10 ns

N-Channel

SWITCHING

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

14ns

10V

±20V

13 ns

30 ns

3.3A

-

20V

-

-

-

-

-

9.01mm

10.41mm

4.7mm

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

400V

TO-220AB

-

-

-

400V

-

-

DRAIN

6.000006g

yes

1

IRF7413ZTRPBF vs IRF720LPBF

Certification

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IRF7413ZTRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 13A 8-Pin SOIC T/R RoHS: Compliant	1384	1 $0.6016 10 $0.5247 25 $0.5222 100 $0.3784 250 $0.3773 500 $0.3763 1000 $0.3157
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	5126	1 $1 10 $0.872 100 $0.673 500 $0.49852 1000 $0.39882
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	5126	1 $1 10 $0.872 100 $0.673 500 $0.49852 1000 $0.39882
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	4000	4000 $0.3509
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 13A 8-Pin SOIC T/R RoHS: Compliant	1534	29 $0.5222 100 $0.3784 250 $0.3773 500 $0.3763 1000 $0.3157
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R Pb Free ( RoHS: Compliant	0	4000 $0.2219 8000 $0.1809 16000 $0.1659 24000 $0.1529 40000 $0.1419
IRF7413ZTRPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R Pb Free E RoHS: Compliant	0	4000 $0.2529 8000 $0.2439 16000 $0.2349 24000 $0.2269 40000 $0.2229
IRF7413ZTRPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R Pb Free E RoHS: Compliant	0	4000 $0.2629 8000 $0.2229 16000 $0.1979 24000 $0.1779 40000 $0.1659
IRF7413ZTRPBF-EL DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R Pb Free E RoHS: Compliant	0	4000 $0.2484 8000 $0.23819 12000 $0.23497 20000 $0.22582 40000 $0.22292 100000 $0.21735 200000 $0.21205
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET Transistor, N Channel, 13 A, 30 V, 0.008 oh	33	1 $0.83 10 $0.682 25 $0.601 50 $0.521 100 $0.44 250 $0.411 500 $0.381 1000 $0.352
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 8 Milli RoHS: Compliant	0	4000 $0.9
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET Power RoHS: Compliant	8000	4000 $0.27
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Single N-Channel 30 V 10 mOhm 9.5 nC HEXFET Power RoHS: Compliant	259	1 $0.36 250 $0.32 500 $0.315 1000 $0.31 2500 $0.3
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET MOSFT 30V 13A 10mOhm 9.5nC RoHS: Compliant	2427	1 $0.83 10 $0.682 100 $0.44 1000 $0.352 4000 $0.298
IRF7413ZTRPBF DISTI #	International Rectifier	13A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, M	2870	1 $2.36 551 $0.9735 1028 $0.885
IRF7413ZTRPBF DISTI #	International Rectifier		1612
IRF7413ZTRPBF DISTI #	International Rectifier		3500
IRF7413ZTRPBF DISTI #	International Rectifier		6702
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	N-Ch 30V 13A 2,5W 0,01R SO8 RoHS: Compliant	0	50 $0.208 100 $0.1685 500 $0.1485 2000 $0.143
IRF7413ZTRPBF DISTI #	International Rectifier	RoHS: Compliant	2100
IRF7413ZTRPBF DISTI #	International Rectifier	INSTOCK	3871
IRF7413ZTRPBF DISTI #	International Rectifier	INSTOCK	4279
IRF7413ZTRPBF DISTI #	International Rectifier	Pbf (ship within 1day)	3588	1 $2.24 10 $1.42 50 $1.06 100 $0.77 500 $0.69 1000 $0.59
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Power Field-Effect Transistor,10AI(D),400V,0.55ohm RoHS: Compliant	5384	4000 $0.36 5384 $0.3375
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 30V 13A 8-Pin SOIC T/R RoHS: Compliant	1534	10 $0.5247 25 $0.5222 100 $0.3784 250 $0.3773
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 30V, 13A, SOIC-8 RoHS: Compliant	0	1 $1.32 10 $1.09 100 $0.697 1000 $0.557 4000 $0.472
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 30V, 13A, SOIC-8 RoHS: Compliant	8	1 $1.32 10 $1.09 100 $0.697 1000 $0.557 4000 $0.472
IRF7413ZTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 30V, 13A, SOIC-8 RoHS: Compliant	38	5 $0.232 25 $0.226 100 $0.218 250 $0.213 500 $0.209

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Infineon Technologies IRF7413ZTRPBF

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