Infineon Technologies IRF7413PBF

Name: IRF7413PBF
Brand: Infineon Technologies
SKU: 2487452-IRF7413PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7413PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2487452-IRF7413PBF

Description:: MOSFET N-CH 30V 13A 8-SOIC

ECAD Model:

Datasheet:: IRF7413PBF

Part Pictures

Specifications

Infineon Technologies IRF7413PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7413PBF.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
11mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.8pF @ 25V
Current - Continuous Drain (Id) @ 25°C
13A Ta
Gate Charge (Qg) (Max) @ Vgs
79nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRF7413PBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1.8pF @ 25V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

IRF7413PBF Features
a 30V drain to source voltage (Vdss)

IRF7413PBF Applications
There are a lot of Rochester Electronics, LLC
IRF7413PBF applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IRF7413PBF More Descriptions

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.011Ohm;ID 13A;SO-8;PD 2.5W;VGS /-20V;VF 1
Single N-Channel 30 V 0.011 Ohm 52 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Low Switching Losses; Low Conduction Losses
Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube
MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:13A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:58A; Row Pitch:6.3mm; SMD Marking:F7413; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF7413PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Published

Surface Mount

Transistor Element Material

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Factory Lead Time

Mount

Number of Pins

Resistance

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Output Current

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
IRF7413PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8-SO

-55°C~150°C TJ

Tube

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Ta

N-Channel

11mOhm @ 7.3A, 10V

3V @ 250μA

1.8pF @ 25V

13A Ta

79nC @ 10V

30V

4.5V 10V

±20V

ROHS3 Compliant

-

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-
IRF7207TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

P-Channel

60m Ω @ 5.4A, 4.5V

700mV @ 250μA

780pF @ 15V

5.4A Tc

22nC @ 4.5V

20V

2.7V 4.5V

±12V

Non-RoHS Compliant

2000

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-

-

-

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-

IRF7413PBF vs IRF7207TR
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

N-Channel

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

Non-RoHS Compliant

2003

YES

SILICON

8

EAR99

LOGIC LEVEL COMPATIBLE

8541.29.00.95

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

-

-

-

-

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-

IRF7413PBF vs IRF7201TR
IRF7204TRPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

P-Channel

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

4.5V 10V

±12V

ROHS3 Compliant

1997

-

SILICON

8

-

LOGIC LEVEL COMPATIBLE

-

DUAL

GULL WING

-

-

-

-

1

-

ENHANCEMENT MODE

SWITCHING

-

-

-

-

-

-

12 Weeks

Surface Mount

8

60mOhm

-20V

-5.3A

Single

2.5W

5.3A

14 ns

26ns

68 ns

100 ns

-5.3A

-2.5V

12V

-20V

-20V

100 ns

-2.5 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

Contains Lead, Lead Free

IRF7413PBF vs IRF7204TRPBF

Certification

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IRF7413PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF7413PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube RoHS: Compliant	3492	1 $0.7346 10 $0.6548 100 $0.4962 500 $0.3561 1000 $0.3205 2500 $0.2885 10000 $0.2723
IRF7413TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	1905	1 $1.07 10 $0.95 100 $0.7617 500 $0.6019 1000 $0.48574
IRF7413TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	1905	1 $1.07 10 $0.95 100 $0.7617 500 $0.6019 1000 $0.48574
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	1237	1 $1.26 10 $1.119 100 $0.8962 500 $0.70776 1000 $0.57067
IRF7413TRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 30V 13A 8-SOIC RoHS: Compliant	0	4000 $0.4434
IRF7413PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube RoHS: Compliant	7486	42 $0.2431
IRF7413PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube RoHS: Compliant	3492	21 $0.6548 100 $0.4962 500 $0.3561 1000 $0.3205 2500 $0.2885
IRF7413PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R - Rail/Tu RoHS: Compliant	190
IRF7413PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC T/R (Alt: SP0 RoHS: Compliant	8290	1 $0.8379 10 $0.7139 25 $0.6479 50 $0.6459 100 $0.4769 500 $0.4409 1000 $0.3819
IRF7413PBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS ROHS COMPLIANT: YES	0
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 0.011Oh RoHS: Compliant	0	3800 $0.845
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC RoHS: Compliant	2141	1 $0.98 10 $0.835 100 $0.641 500 $0.567 1000 $0.447 2500 $0.397 10000 $0.382
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 13A SOIC8, EA	113	1 $2 25 $0.47 100 $0.36 250 $0.34 500 $0.31
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET N-CHANNEL 30V 13A SOIC8, TU	170	25 $0.47 100 $0.36 250 $0.34 500 $0.31
IRF7413PBF DISTI #	International Rectifier		384
IRF7413PBF DISTI #	International Rectifier	MOSFET Transistor, N-Channel, SO	160	1 $1.25 21 $0.625 97 $0.375
IRF7413PBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 30V, 13A, 2.5W	412	1 $0.6863 3 $0.4414 10 $0.3603 95 $0.3171
IRF7413PBF DISTI #	Infineon Technologies AG	N-Ch 30V 13A 2,5W 0,011R SO8 RoHS: Compliant	3420	19 $0.4375 190 $0.2775 570 $0.2375 1045 $0.2285
IRF7413TRPBF DISTI #	Infineon Technologies AG	N-Ch 30V 13A 2,5W 0,011R SO8 RoHS: Compliant	6350	50 $0.299 100 $0.259 500 $0.239 2000 $0.23
IRF7413PBF DISTI #	International Rectifier	RoHS: Compliant	127
IRF7413PBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 30V 13A 8-Pin SOIC Tube RoHS: Compliant	7486	5 $1.69 25 $0.677 50 $0.615 100 $0.549 500 $0.451 1000 $0.414
IRF7413PBF DISTI #	INF	RoHS: Compliant	95	1805 $0.5145
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, SO-8 RoHS: Compliant	1942	1 $1.56 10 $1.33 100 $1.02 500 $0.897 1000 $0.708 2500 $0.628 10000 $0.605
IRF7413PBF DISTI #	Infineon Technologies AG	MOSFET, N, LOGIC, SO-8 RoHS: Compliant	1568	5 $0.707 25 $0.47 100 $0.36 250 $0.34 500 $0.31

IRF7413~~(33)~~
IRF741~~(56)~~
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Infineon Technologies IRF7413PBF

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