IRF7410TRPBF

Infineon Technologies IRF7410TRPBF

Part Number:
IRF7410TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479620-IRF7410TRPBF
Description:
MOSFET P-CH 12V 16A 8-SOIC
ECAD Model:
Datasheet:
IRF7410TRPBF

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Specifications
Infineon Technologies IRF7410TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7410TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2006
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • Termination
    SMD/SMT
  • Resistance
    7MOhm
  • Voltage - Rated DC
    -12V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -16A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Row Spacing
    6.3 mm
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    13 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    7m Ω @ 16A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8676pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    16A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    91nC @ 4.5V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    200 ns
  • Turn-Off Delay Time
    271 ns
  • Continuous Drain Current (ID)
    -16A
  • Threshold Voltage
    -400mV
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -12V
  • Pulsed Drain Current-Max (IDM)
    65A
  • Dual Supply Voltage
    -12V
  • Recovery Time
    145 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -900 mV
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7410TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8676pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -16A.With a drain-source breakdown voltage of -12V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -12V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 271 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-400mV is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 12V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.

IRF7410TRPBF Features
a continuous drain current (ID) of -16A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 271 ns
based on its rated peak drain current 65A.
a threshold voltage of -400mV
a 12V drain to source voltage (Vdss)


IRF7410TRPBF Applications
There are a lot of Infineon Technologies
IRF7410TRPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF7410TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS /-8V
Single P-Channel 12 V 13 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
Trans MOSFET P-CH 20V 16A 8-Pin SOIC T/R - Tape and Reel
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET, N, 12V, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:13A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SOIC; ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF7410TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    Resistance
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Row Spacing
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Power Dissipation
    Input Capacitance
    Rds On Max
    Weight
    Pbfree Code
    JEDEC-95 Code
    View Compare
  • IRF7410TRPBF
    IRF7410TRPBF
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2006
    e3
    Active
    1 (Unlimited)
    8
    SMD/SMT
    7MOhm
    -12V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -16A
    30
    1
    6.3 mm
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    13 ns
    P-Channel
    SWITCHING
    7m Ω @ 16A, 4.5V
    900mV @ 250μA
    8676pF @ 10V
    16A Ta
    91nC @ 4.5V
    12ns
    12V
    1.8V 4.5V
    ±8V
    200 ns
    271 ns
    -16A
    -400mV
    8V
    -12V
    65A
    -12V
    145 ns
    150°C
    -900 mV
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    -
    NOT SPECIFIED
    1
    -
    -
    3.1W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    13A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    FET General Purpose Power
    unknown
    3
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    400V
    190 mJ
    -
    -
    -
    -
    -
    -
    -
  • IRF710L
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    I2PAK
    3.1W
    170pF
    3.6 Ω
    -
    -
    -
  • IRF720LPBF
    12 Weeks
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    -
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    1
    3.1W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    -
    10 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    -
    20V
    -
    -
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    DRAIN
    400V
    -
    -
    -
    -
    -
    6.000006g
    yes
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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