Infineon Technologies IRF7410TRPBF
- Part Number:
- IRF7410TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479620-IRF7410TRPBF
- Description:
- MOSFET P-CH 12V 16A 8-SOIC
- Datasheet:
- IRF7410TRPBF
Infineon Technologies IRF7410TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7410TRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2006
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- TerminationSMD/SMT
- Resistance7MOhm
- Voltage - Rated DC-12V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-16A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Row Spacing6.3 mm
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time13 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs7m Ω @ 16A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8676pF @ 10V
- Current - Continuous Drain (Id) @ 25°C16A Ta
- Gate Charge (Qg) (Max) @ Vgs91nC @ 4.5V
- Rise Time12ns
- Drain to Source Voltage (Vdss)12V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)200 ns
- Turn-Off Delay Time271 ns
- Continuous Drain Current (ID)-16A
- Threshold Voltage-400mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-12V
- Pulsed Drain Current-Max (IDM)65A
- Dual Supply Voltage-12V
- Recovery Time145 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-900 mV
- Height1.75mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7410TRPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8676pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -16A.With a drain-source breakdown voltage of -12V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -12V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 271 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-400mV is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 12V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
IRF7410TRPBF Features
a continuous drain current (ID) of -16A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 271 ns
based on its rated peak drain current 65A.
a threshold voltage of -400mV
a 12V drain to source voltage (Vdss)
IRF7410TRPBF Applications
There are a lot of Infineon Technologies
IRF7410TRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 8676pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -16A.With a drain-source breakdown voltage of -12V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -12V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 271 ns.Peak drain current for this device is 65A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-400mV is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 12V.Using drive voltage (1.8V 4.5V) reduces this device's overall power consumption.
IRF7410TRPBF Features
a continuous drain current (ID) of -16A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 271 ns
based on its rated peak drain current 65A.
a threshold voltage of -400mV
a 12V drain to source voltage (Vdss)
IRF7410TRPBF Applications
There are a lot of Infineon Technologies
IRF7410TRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF7410TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -12V;RDS(ON) 7 Milliohms;ID -16A;SO-8;PD 2.5W;VGS /-8V
Single P-Channel 12 V 13 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
Trans MOSFET P-CH 20V 16A 8-Pin SOIC T/R - Tape and Reel
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET, N, 12V, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:13A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SOIC; ;RoHS Compliant: Yes
Single P-Channel 12 V 13 mOhm 91 nC HEXFET® Power Mosfet - SOIC-8
Benefits: RoHS Compliant; Industry-leading quality; Industry-Standard Pinout; P-Channel MOSFET
Trans MOSFET P-CH 20V 16A 8-Pin SOIC T/R - Tape and Reel
-12V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
MOSFET, N, 12V, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:12V; Current, Id Cont:13A; Resistance, Rds On:0.007ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.9V; Case Style:SOIC; ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF7410TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationResistanceVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsRow SpacingNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageMax Power DissipationInput CapacitanceRds On MaxWeightPbfree CodeJEDEC-95 CodeView Compare
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IRF7410TRPBF12 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2006e3Active1 (Unlimited)8SMD/SMT7MOhm-12VMOSFET (Metal Oxide)DUALGULL WING260-16A3016.3 mm12.5W TaSingleENHANCEMENT MODE2.5W13 nsP-ChannelSWITCHING7m Ω @ 16A, 4.5V900mV @ 250μA8676pF @ 10V16A Ta91nC @ 4.5V12ns12V1.8V 4.5V±8V200 ns271 ns-16A-400mV8V-12V65A-12V145 ns150°C-900 mV1.75mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free-----------------
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--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017-Obsolete1 (Unlimited)2---MOSFET (Metal Oxide)SINGLEGULL WING225-NOT SPECIFIED1--3.1W Ta 50W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A---13A---------Non-RoHS Compliant-FET General Purpose Powerunknown3R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEDRAIN400V190 mJ-------
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--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------------N-Channel-3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A-------------Non-RoHS Compliant----------I2PAK3.1W170pF3.6 Ω---
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12 Weeks-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTube-2017-Active1 (Unlimited)3---MOSFET (Metal Oxide)-----1-13.1W Ta 50W TcSingleENHANCEMENT MODE-10 nsN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A-20V------9.01mm10.41mm4.7mm-NoROHS3 Compliant-------DRAIN400V-----6.000006gyesTO-220AB
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