Vishay Siliconix IRF740S
- Part Number:
- IRF740S
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2488448-IRF740S
- Description:
- MOSFET N-CH 400V 10A D2PAK
- Datasheet:
- IRF740S
Vishay Siliconix IRF740S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740S.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Supplier Device PackageD2PAK
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Number of Channels1
- Power Dissipation-Max3.1W Ta 125W Tc
- Element ConfigurationSingle
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance1.4nF
- Drain to Source Resistance550mOhm
- Rds On Max550 mΩ
- Height4.83mm
- Length10.67mm
- Width9.65mm
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF740S Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF740S Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740S Applications
There are a lot of Vishay Siliconix
IRF740S applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF740S Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740S Applications
There are a lot of Vishay Siliconix
IRF740S applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF740S More Descriptions
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D2-PAK PAMOSFET N-CH 400V 10A D2PAK
MOSFET, N D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Case Style:TO-263; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:125W; Power, Pd:125W; SMD Marking:IRF740S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V; Width, External:10.54mm
MOSFET, N D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Case Style:TO-263; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:125W; Power, Pd:125W; SMD Marking:IRF740S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V; Width, External:10.54mm
The three parts on the right have similar specifications to IRF740S.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusLead FreeSeriesSurface MountTransistor Element MaterialNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimePbfree CodeCase ConnectionRadiation HardeningView Compare
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IRF740SSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3D2PAK1.437803g-55°C~150°C TJTube2016Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)10A13.1W Ta 125W TcSingle14 nsN-Channel550mOhm @ 6A, 10V4V @ 250μA1400pF @ 25V10A Tc63nC @ 10V27ns400V10V±20V24 ns50 ns10A20V400V1.4nF550mOhm550 mΩ4.83mm10.67mm9.65mmNon-RoHS CompliantContains Lead----------------------------
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-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.5W Tc--P-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V-20V2.7V 4.5V±12V-----------Non-RoHS Compliant-HEXFET®--------------------------
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.5W Tc--N-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V-30V4.5V 10V±20V-----------Non-RoHS Compliant-HEXFET®YESSILICON8EAR99LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ----
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3-6.000006g-55°C~150°C TJTube2017Active1 (Unlimited)---MOSFET (Metal Oxide)-13.1W Ta 50W TcSingle10 nsN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A20V----9.01mm10.41mm4.7mmROHS3 Compliant---SILICON3---------1-ENHANCEMENT MODESWITCHINGTO-220AB---400V-12 WeeksyesDRAINNo
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