IRF740S

Vishay Siliconix IRF740S

Part Number:
IRF740S
Manufacturer:
Vishay Siliconix
Ventron No:
2488448-IRF740S
Description:
MOSFET N-CH 400V 10A D2PAK
ECAD Model:
Datasheet:
IRF740S

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Specifications
Vishay Siliconix IRF740S technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740S.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Supplier Device Package
    D2PAK
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    10A
  • Number of Channels
    1
  • Power Dissipation-Max
    3.1W Ta 125W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    14 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    550mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1400pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    10A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    27ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    24 ns
  • Turn-Off Delay Time
    50 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    1.4nF
  • Drain to Source Resistance
    550mOhm
  • Rds On Max
    550 mΩ
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF740S Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1400pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=400V. And this device has 400V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 50 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 14 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF740S Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)


IRF740S Applications
There are a lot of Vishay Siliconix
IRF740S applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF740S More Descriptions
400V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A D2-PAK PAMOSFET N-CH 400V 10A D2PAK
MOSFET, N D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Case Style:TO-263; Termination Type:SMD; Current, Idm Pulse:40A; External Depth:15.49mm; External Length / Height:4.69mm; Power Dissipation:125W; Power, Pd:125W; SMD Marking:IRF740S; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V; Width, External:10.54mm
Product Comparison
The three parts on the right have similar specifications to IRF740S.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Lead Free
    Series
    Surface Mount
    Transistor Element Material
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Pbfree Code
    Case Connection
    Radiation Hardening
    View Compare
  • IRF740S
    IRF740S
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    D2PAK
    1.437803g
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    10A
    1
    3.1W Ta 125W Tc
    Single
    14 ns
    N-Channel
    550mOhm @ 6A, 10V
    4V @ 250μA
    1400pF @ 25V
    10A Tc
    63nC @ 10V
    27ns
    400V
    10V
    ±20V
    24 ns
    50 ns
    10A
    20V
    400V
    1.4nF
    550mOhm
    550 mΩ
    4.83mm
    10.67mm
    9.65mm
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7207TR
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Tc
    -
    -
    P-Channel
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    780pF @ 15V
    5.4A Tc
    22nC @ 4.5V
    -
    20V
    2.7V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7201TR
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Tc
    -
    -
    N-Channel
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    YES
    SILICON
    8
    EAR99
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    70 mJ
    -
    -
    -
    -
  • IRF720LPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    6.000006g
    -55°C~150°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    3.1W Ta 50W Tc
    Single
    10 ns
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    20V
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    ROHS3 Compliant
    -
    -
    -
    SILICON
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    SWITCHING
    TO-220AB
    -
    -
    -
    400V
    -
    12 Weeks
    yes
    DRAIN
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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