IRF740LC

Vishay Siliconix IRF740LC

Part Number:
IRF740LC
Manufacturer:
Vishay Siliconix
Ventron No:
3071532-IRF740LC
Description:
MOSFET N-CH 400V 10A TO-220AB
ECAD Model:
Datasheet:
IRF740LC

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Specifications
Vishay Siliconix IRF740LC technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740LC.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2011
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    10A
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    550mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    10A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Rise Time
    31ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    10A
  • Gate to Source Voltage (Vgs)
    30V
  • Input Capacitance
    1.1nF
  • Drain to Source Resistance
    550mOhm
  • Rds On Max
    550 mΩ
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
IRF740LC Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF740LC Features
a continuous drain current (ID) of 10A
the turn-off delay time is 25 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)


IRF740LC Applications
There are a lot of Vishay Siliconix
IRF740LC applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF740LC More Descriptions
MOSFET N-CH 400V 10A TO-220AB
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(On):0.55Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No
MOSFET, N TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Case Style:TO-220AB; Current, Idm Pulse:32A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Full Power Rating:25°C; Time, t Off:30ns; Time, t On:31ns; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF740LC.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Resistance
    Number of Elements
    Power Dissipation
    Drain to Source Breakdown Voltage
    Max Power Dissipation
    View Compare
  • IRF740LC
    IRF740LC
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2011
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    10A
    1
    125W Tc
    Single
    11 ns
    N-Channel
    550mOhm @ 6A, 10V
    4V @ 250μA
    1100pF @ 25V
    10A Tc
    39nC @ 10V
    31ns
    400V
    10V
    ±30V
    20 ns
    25 ns
    10A
    30V
    1.1nF
    550mOhm
    550 mΩ
    4 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
  • IRF7233PBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    -12V
    MOSFET (Metal Oxide)
    -9.5A
    -
    2.5W Ta
    -
    -
    P-Channel
    20mOhm @ 9.5A, 4.5V
    600mV @ 250μA
    6000pF @ 10V
    9.5A Ta
    74nC @ 5V
    540ns
    12V
    2.5V 4.5V
    ±12V
    370 ns
    77 ns
    -9.5A
    12V
    6nF
    20mOhm
    20 mΩ
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    HEXFET®
    20MOhm
    1
    2.5W
    -12V
    -
  • IRF7207TR
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    2.5W Tc
    -
    -
    P-Channel
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    780pF @ 15V
    5.4A Tc
    22nC @ 4.5V
    -
    20V
    2.7V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    -
    -
  • IRF710L
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    2A
    -
    170pF
    -
    3.6 Ω
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    3.1W
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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