Vishay Siliconix IRF740LC
- Part Number:
- IRF740LC
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3071532-IRF740LC
- Description:
- MOSFET N-CH 400V 10A TO-220AB
- Datasheet:
- IRF740LC
Vishay Siliconix IRF740LC technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740LC.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2011
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs39nC @ 10V
- Rise Time31ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)30V
- Input Capacitance1.1nF
- Drain to Source Resistance550mOhm
- Rds On Max550 mΩ
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF740LC Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF740LC Features
a continuous drain current (ID) of 10A
the turn-off delay time is 25 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740LC Applications
There are a lot of Vishay Siliconix
IRF740LC applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 10A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 550mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF740LC Features
a continuous drain current (ID) of 10A
the turn-off delay time is 25 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740LC Applications
There are a lot of Vishay Siliconix
IRF740LC applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF740LC More Descriptions
MOSFET N-CH 400V 10A TO-220AB
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(On):0.55Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No
MOSFET, N TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Case Style:TO-220AB; Current, Idm Pulse:32A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Full Power Rating:25°C; Time, t Off:30ns; Time, t On:31ns; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:400V; On Resistance Rds(On):0.55Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Msl:- Rohs Compliant: No
MOSFET, N TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Case Style:TO-220AB; Current, Idm Pulse:32A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Temperature, Full Power Rating:25°C; Time, t Off:30ns; Time, t On:31ns; Transistors, No. of:1; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
The three parts on the right have similar specifications to IRF740LC.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Input CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesResistanceNumber of ElementsPower DissipationDrain to Source Breakdown VoltageMax Power DissipationView Compare
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IRF740LCThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2011Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)10A1125W TcSingle11 nsN-Channel550mOhm @ 6A, 10V4V @ 250μA1100pF @ 25V10A Tc39nC @ 10V31ns400V10V±30V20 ns25 ns10A30V1.1nF550mOhm550 mΩ4 V9.01mm10.41mm4.7mmUnknownNoNon-RoHS CompliantContains Lead-------
-
Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO--55°C~150°C TJTube2004Obsolete1 (Unlimited)150°C-55°C-12VMOSFET (Metal Oxide)-9.5A-2.5W Ta--P-Channel20mOhm @ 9.5A, 4.5V600mV @ 250μA6000pF @ 10V9.5A Ta74nC @ 5V540ns12V2.5V 4.5V±12V370 ns77 ns-9.5A12V6nF20mOhm20 mΩ-----NoRoHS CompliantLead FreeHEXFET®20MOhm12.5W-12V-
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)---MOSFET (Metal Oxide)--2.5W Tc--P-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V-20V2.7V 4.5V±12V-------------Non-RoHS Compliant-HEXFET®-----
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-----N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A-170pF-3.6 Ω------Non-RoHS Compliant------3.1W
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