Vishay Siliconix IRF740APBF
- Part Number:
- IRF740APBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2479937-IRF740APBF
- Description:
- MOSFET N-CH 400V 10A TO-220AB
- Datasheet:
- IRF740APBF
Vishay Siliconix IRF740APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740APBF.
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2016
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance550mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1030pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs36nC @ 10V
- Rise Time35ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)22 ns
- Turn-Off Delay Time24 ns
- Continuous Drain Current (ID)10A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage400V
- Input Capacitance1.03nF
- Drain to Source Resistance550mOhm
- Rds On Max550 mΩ
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF740APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.This device has a drain-to-source resistance of 550mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF740APBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF740APBF Applications
There are a lot of Vishay Siliconix
IRF740APBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.This device has a drain-to-source resistance of 550mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF740APBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF740APBF Applications
There are a lot of Vishay Siliconix
IRF740APBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF740APBF More Descriptions
Transistor MOSFET N-CH 400V 10A 3-Pin (3 Tab) TO-220AB
Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220-3
N CHANNEL MOSFET, 400V, 10A, TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
MOSFET N-CH 400V 10A TO-220AB | Siliconix / Vishay IRF740APBF
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.55Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220-3
N CHANNEL MOSFET, 400V, 10A, TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
MOSFET N-CH 400V 10A TO-220AB | Siliconix / Vishay IRF740APBF
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.55Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
The three parts on the right have similar specifications to IRF740APBF.
-
ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationPbfree CodeCase ConnectionView Compare
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IRF740APBF12 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2016Active1 (Unlimited)550mOhm150°C-55°C400VMOSFET (Metal Oxide)10A11125W TcSingle125W10 nsN-Channel550mOhm @ 6A, 10V4V @ 250μA1030pF @ 25V10A Tc36nC @ 10V35ns400V10V±30V22 ns24 ns10A4V30V400V1.03nF550mOhm550 mΩ4 V9.01mm10.41mm4.7mmNo SVHCNoROHS3 CompliantLead Free--------------------------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1-2.5W Tc---N-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V-30V4.5V 10V±20V---------------Non-RoHS Compliant-YESSILICONHEXFET®8EAR99LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ---
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-------N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A---170pF-3.6 Ω------Non-RoHS Compliant-----------------------3.1W--
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12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3-6.000006g-55°C~150°C TJTube2017Active1 (Unlimited)----MOSFET (Metal Oxide)-113.1W Ta 50W TcSingle-10 nsN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A-20V-----9.01mm10.41mm4.7mm-NoROHS3 Compliant--SILICON-3----------ENHANCEMENT MODESWITCHINGTO-220AB---400V--yesDRAIN
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