IRF740APBF

Vishay Siliconix IRF740APBF

Part Number:
IRF740APBF
Manufacturer:
Vishay Siliconix
Ventron No:
2479937-IRF740APBF
Description:
MOSFET N-CH 400V 10A TO-220AB
ECAD Model:
Datasheet:
IRF740APBF

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Specifications
Vishay Siliconix IRF740APBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF740APBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2016
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    550mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    400V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    10A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    125W Tc
  • Element Configuration
    Single
  • Power Dissipation
    125W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    550mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1030pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    10A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    36nC @ 10V
  • Rise Time
    35ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    22 ns
  • Turn-Off Delay Time
    24 ns
  • Continuous Drain Current (ID)
    10A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    1.03nF
  • Drain to Source Resistance
    550mOhm
  • Rds On Max
    550 mΩ
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF740APBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1030pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 400V, and this device has a drainage-to-source breakdown voltage of 400VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 24 ns.This device has a drain-to-source resistance of 550mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.For this transistor to work, a voltage 400V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IRF740APBF Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 550mOhm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)


IRF740APBF Applications
There are a lot of Vishay Siliconix
IRF740APBF applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF740APBF More Descriptions
Transistor MOSFET N-CH 400V 10A 3-Pin (3 Tab) TO-220AB
Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220-3
N CHANNEL MOSFET, 400V, 10A, TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
MOSFET N-CH 400V 10A TO-220AB | Siliconix / Vishay IRF740APBF
Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.55Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
Product Comparison
The three parts on the right have similar specifications to IRF740APBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    Series
    Number of Terminations
    ECCN Code
    Additional Feature
    HTS Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Max Power Dissipation
    Pbfree Code
    Case Connection
    View Compare
  • IRF740APBF
    IRF740APBF
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2016
    Active
    1 (Unlimited)
    550mOhm
    150°C
    -55°C
    400V
    MOSFET (Metal Oxide)
    10A
    1
    1
    125W Tc
    Single
    125W
    10 ns
    N-Channel
    550mOhm @ 6A, 10V
    4V @ 250μA
    1030pF @ 25V
    10A Tc
    36nC @ 10V
    35ns
    400V
    10V
    ±30V
    22 ns
    24 ns
    10A
    4V
    30V
    400V
    1.03nF
    550mOhm
    550 mΩ
    4 V
    9.01mm
    10.41mm
    4.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7201TR
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2003
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    2.5W Tc
    -
    -
    -
    N-Channel
    30m Ω @ 7.3A, 10V
    1V @ 250μA
    550pF @ 25V
    7.3A Tc
    28nC @ 10V
    -
    30V
    4.5V 10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    HEXFET®
    8
    EAR99
    LOGIC LEVEL COMPATIBLE
    8541.29.00.95
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    SWITCHING
    MS-012AA
    7.3A
    0.03Ohm
    58A
    30V
    70 mJ
    -
    -
    -
  • IRF710L
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    2A
    -
    -
    -
    170pF
    -
    3.6 Ω
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.1W
    -
    -
  • IRF720LPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    6.000006g
    -55°C~150°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    1
    3.1W Ta 50W Tc
    Single
    -
    10 ns
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    -
    20V
    -
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    SILICON
    -
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    SWITCHING
    TO-220AB
    -
    -
    -
    400V
    -
    -
    yes
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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