Infineon Technologies IRF7406TRPBF
- Part Number:
- IRF7406TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2479577-IRF7406TRPBF
- Description:
- MOSFET P-CH 30V 5.8A 8-SOIC
- Datasheet:
- IRF7406TRPBF
Infineon Technologies IRF7406TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7406TRPBF.
- Factory Lead Time12 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance45mOhm
- Additional FeatureULTRA LOW RESISTANCE
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-5.8A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Row Spacing6.3 mm
- Number of Channels1
- Power Dissipation-Max2.5W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time16 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 2.8A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.8A Ta
- Gate Charge (Qg) (Max) @ Vgs59nC @ 10V
- Rise Time33ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)47 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)-5.8A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Pulsed Drain Current-Max (IDM)23A
- Dual Supply Voltage-30V
- Recovery Time63 ns
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-1 V
- Height1.75mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7406TRPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to produce the lowest feasible on-resistance per silicon area. This benefit gives the designer an incredibly efficient device for usage in a multitude of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The SO-8 is excellent for a range of power applications because to modifications made to its leadframe, including improved thermal performance and multiple-die support. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, power dissipation of more than 0.8W is achievable.
IRF7406TRPBF Features
? Technology Generation No Logic
? Extremely Low Resistance
? Mosfet P-Channel
? Mount Surface
? Available on reel-to-reel tape
? Rating Dynamic dv/dt
? Quick Switching
? Lead-Free
IRF7406TRPBF Applications
Switching applications
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to produce the lowest feasible on-resistance per silicon area. This benefit gives the designer an incredibly efficient device for usage in a multitude of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The SO-8 is excellent for a range of power applications because to modifications made to its leadframe, including improved thermal performance and multiple-die support. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, power dissipation of more than 0.8W is achievable.
IRF7406TRPBF Features
? Technology Generation No Logic
? Extremely Low Resistance
? Mosfet P-Channel
? Mount Surface
? Available on reel-to-reel tape
? Rating Dynamic dv/dt
? Quick Switching
? Lead-Free
IRF7406TRPBF Applications
Switching applications
IRF7406TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS /-20V
Single P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P-CH, -30V, -5.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.045ohm; Available until stocks are exhausted Alternative available
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
Single P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P-CH, -30V, -5.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.045ohm; Available until stocks are exhausted Alternative available
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
The three parts on the right have similar specifications to IRF7406TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceAdditional FeatureVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsRow SpacingNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageRecovery TimeMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSubcategoryReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageMax Power DissipationInput CapacitanceRds On MaxOutput CurrentView Compare
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IRF7406TRPBF12 WeeksTinSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2004e3Active1 (Unlimited)8EAR9945mOhmULTRA LOW RESISTANCE-30VMOSFET (Metal Oxide)DUALGULL WING260-5.8A3016.3 mm12.5W TaSingleENHANCEMENT MODE2.5W16 nsP-ChannelSWITCHING45m Ω @ 2.8A, 10V1V @ 250μA1100pF @ 25V5.8A Ta59nC @ 10V33ns30V4.5V 10V±20V47 ns45 ns-5.8A-1V20V-30V23A-30V63 ns150°C-1 V1.75mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free---------------
-
--Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017-Obsolete1 (Unlimited)2----MOSFET (Metal Oxide)SINGLEGULL WING225-NOT SPECIFIED1--3.1W Ta 50W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A---13A---------Non-RoHS Compliant-FET General Purpose Powerunknown3R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEDRAIN400V190 mJ-----
-
--Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-------------N-Channel-3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A-------------Non-RoHS Compliant----------I2PAK3.1W170pF3.6 Ω-
-
12 Weeks-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997-Active1 (Unlimited)8-60mOhmLOGIC LEVEL COMPATIBLE-20VMOSFET (Metal Oxide)DUALGULL WING--5.3A-1--2.5W TcSingleENHANCEMENT MODE2.5W14 nsP-ChannelSWITCHING60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V68 ns100 ns-5.3A-2.5V12V-20V--20V100 ns--2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantContains Lead, Lead Free-------------5.3A
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