IRF7406TRPBF

Infineon Technologies IRF7406TRPBF

Part Number:
IRF7406TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2479577-IRF7406TRPBF
Description:
MOSFET P-CH 30V 5.8A 8-SOIC
ECAD Model:
Datasheet:
IRF7406TRPBF

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Specifications
Infineon Technologies IRF7406TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7406TRPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2004
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    45mOhm
  • Additional Feature
    ULTRA LOW RESISTANCE
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -5.8A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Row Spacing
    6.3 mm
  • Number of Channels
    1
  • Power Dissipation-Max
    2.5W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    16 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 2.8A, 10V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1100pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.8A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    59nC @ 10V
  • Rise Time
    33ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    47 ns
  • Turn-Off Delay Time
    45 ns
  • Continuous Drain Current (ID)
    -5.8A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Pulsed Drain Current-Max (IDM)
    23A
  • Dual Supply Voltage
    -30V
  • Recovery Time
    63 ns
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1 V
  • Height
    1.75mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7406TRPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge manufacturing procedures to produce the lowest feasible on-resistance per silicon area. This benefit gives the designer an incredibly efficient device for usage in a multitude of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The SO-8 is excellent for a range of power applications because to modifications made to its leadframe, including improved thermal performance and multiple-die support. These upgrades allow for the usage of many devices while drastically reducing board space in an application. The container is made for wave, infrared, or vapor phase soldering methods. In a typical PCB mount application, power dissipation of more than 0.8W is achievable.

IRF7406TRPBF Features
? Technology Generation No Logic
? Extremely Low Resistance
? Mosfet P-Channel
? Mount Surface
? Available on reel-to-reel tape
? Rating Dynamic dv/dt
? Quick Switching
? Lead-Free

IRF7406TRPBF Applications
Switching applications
IRF7406TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS /-20V
Single P-Channel 30 V 0.045 Ohm 39.3 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 6.7A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P-CH, -30V, -5.8A, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -5.8A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.045ohm; Available until stocks are exhausted Alternative available
Mosfet Transistor; Transistor Polarity:p Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:2.8A; On Resistance Rds(On):0.07Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF7406TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Row Spacing
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Subcategory
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Power Dissipation
    Input Capacitance
    Rds On Max
    Output Current
    View Compare
  • IRF7406TRPBF
    IRF7406TRPBF
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    45mOhm
    ULTRA LOW RESISTANCE
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -5.8A
    30
    1
    6.3 mm
    1
    2.5W Ta
    Single
    ENHANCEMENT MODE
    2.5W
    16 ns
    P-Channel
    SWITCHING
    45m Ω @ 2.8A, 10V
    1V @ 250μA
    1100pF @ 25V
    5.8A Ta
    59nC @ 10V
    33ns
    30V
    4.5V 10V
    ±20V
    47 ns
    45 ns
    -5.8A
    -1V
    20V
    -30V
    23A
    -30V
    63 ns
    150°C
    -1 V
    1.75mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    -
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    -
    NOT SPECIFIED
    1
    -
    -
    3.1W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    13A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    FET General Purpose Power
    unknown
    3
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    400V
    190 mJ
    -
    -
    -
    -
    -
  • IRF710L
    -
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    -
    2016
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    I2PAK
    3.1W
    170pF
    3.6 Ω
    -
  • IRF7204TRPBF
    12 Weeks
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    -
    Active
    1 (Unlimited)
    8
    -
    60mOhm
    LOGIC LEVEL COMPATIBLE
    -20V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -5.3A
    -
    1
    -
    -
    2.5W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -20V
    -
    -20V
    100 ns
    -
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    5.3A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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