Infineon Technologies IRF7406PBF

Name: IRF7406PBF
Brand: Infineon Technologies
SKU: 2850949-IRF7406PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7406PBF

Manufacturer:: Infineon Technologies

Ventron No:: 2850949-IRF7406PBF

Description:: MOSFET P-CH 30V 5.8A 8-SOIC

ECAD Model:

Datasheet:: IRF7406PBF

Specifications

Infineon Technologies IRF7406PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7406PBF.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Supplier Device Package
8-SO
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
2.5W Ta
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
45mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.1pF @ 25V
Current - Continuous Drain (Id) @ 25°C
5.8A Ta
Gate Charge (Qg) (Max) @ Vgs
59nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

IRF7406PBF Overview
The maximum input capacitance of this device is 1.1pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

IRF7406PBF Features
a 30V drain to source voltage (Vdss)

IRF7406PBF Applications
There are a lot of Rochester Electronics, LLC
IRF7406PBF applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

IRF7406PBF More Descriptions

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.045Ohm;ID -5.8A;SO-8;PD 2.5W;VGS /-20V
Single P-Channel 30 V 0.045 Ohm 59 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5.2A; Drain Source Voltage Vds:30V; On Resistance Rds(on):45mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.6W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.8A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Configuration:b; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:1.6W; Power Dissipation Pd:1.6W; Pulse Current Idm:20A; Row Pitch:6.3mm; SMD Marking:F7406; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-10V

Product Comparison

The three parts on the right have similar specifications to IRF7406PBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Surface Mount

Transistor Element Material

Published

Number of Terminations

ECCN Code

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Operating Mode

Transistor Application

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Mount

Max Power Dissipation

Continuous Drain Current (ID)

Input Capacitance

Rds On Max

Factory Lead Time

Number of Pins

Resistance

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Output Current

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
IRF7406PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8-SO

-55°C~150°C TJ

Tube

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Ta

P-Channel

45mOhm @ 2.8A, 10V

1V @ 250μA

1.1pF @ 25V

5.8A Ta

59nC @ 10V

30V

4.5V 10V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

N-Channel

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

Non-RoHS Compliant

YES

SILICON

2003

8

EAR99

LOGIC LEVEL COMPATIBLE

8541.29.00.95

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

SWITCHING

MS-012AA

7.3A

0.03Ohm

58A

30V

70 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7406PBF vs IRF7201TR
IRF710L

Vishay Siliconix

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

I2PAK

-55°C~150°C TJ

Tube

-

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

-

N-Channel

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

400V

10V

±20V

Non-RoHS Compliant

-

-

2016

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

3.1W

2A

170pF

3.6 Ω

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7406PBF vs IRF710L
IRF7204TRPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

Active

1 (Unlimited)

MOSFET (Metal Oxide)

2.5W Tc

P-Channel

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

4.5V 10V

±12V

ROHS3 Compliant

-

SILICON

1997

8

-

LOGIC LEVEL COMPATIBLE

-

DUAL

GULL WING

-

-

-

-

1

-

ENHANCEMENT MODE

SWITCHING

-

-

-

-

-

-

Surface Mount

-

-5.3A

-

-

12 Weeks

8

60mOhm

-20V

-5.3A

Single

2.5W

5.3A

14 ns

26ns

68 ns

100 ns

-2.5V

12V

-20V

-20V

100 ns

-2.5 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

Contains Lead, Lead Free

IRF7406PBF vs IRF7204TRPBF

Certification

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IRF7201TR

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MOSFET N-CH 30V 7.3A 8-SOIC
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MOSFET N-CH 400V 3.3A D2PAK
IRF710L

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IRF7406~~(5)~~
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Part Number	Manufacturers	Description	Stock	Price
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC Tube	3749	3800 $0.3513 7600 $0.3378 15200 $0.3263 22800 $0.3148 38000 $0.309
IRF7406TRPBF DISTI #IRF7406TRPBF	Infineon Technologies AG	MOSFET P-CH 30V 5.8A 8-SOIC RoHS: Compliant	3737	1 $1.2 10 $1.062 100 $0.8397 500 $0.6512 1000 $0.51411
IRF7406TRPBF DISTI #IRF7406TRPBF	Infineon Technologies AG	MOSFET P-CH 30V 5.8A 8-SOIC RoHS: Compliant	3737	1 $1.2 10 $1.062 100 $0.8397 500 $0.6512 1000 $0.51411
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	MOSFET P-CH 30V 5.8A 8-SOIC RoHS: Compliant	0
IRF7406TRPBF DISTI #IRF7406TRPBF	Infineon Technologies AG	MOSFET P-CH 30V 5.8A 8-SOIC RoHS: Compliant	0	4000 $0.46585
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	MOSFETs RoHS: Compliant	3749	5 $1.87 25 $0.749 50 $0.681 100 $0.607 500 $0.499 1000 $0.458
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R - Rail/T RoHS: Compliant	1007
IRF7406PBF. DISTI #IRF7406PBF.	Infineon Technologies AG	PLANAR_MOSFETS ROHS COMPLIANT: YES	0
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -30V, RDS(ON) 0.045O RoHS: Compliant	0	3800 $0.985
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	Power Field-Effect Transistor, 6.7A I(D), 30V, 0.0 RoHS: Compliant	56	1 $0.52 25 $0.48 100 $0.46 500 $0.44 1000 $0.42
IRF7406PBF DISTI #IRF7406PBF	International Rectifier	Power Field-Effect Transistor, 6.7A I(D), 30V, 0.0 RoHS: Compliant	8064	1 $0.52 25 $0.48 100 $0.46 500 $0.44 1000 $0.42
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	MOSFET 1 P-CH -30V HEXFET 45mOhms 39.3nC RoHS: Compliant	3449	1 $1.05 10 $0.89 100 $0.683 500 $0.604 1000 $0.477
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	MOSFET, P, LOGIC, SO-8 RoHS: Compliant	2	5 $0.752 25 $0.674 100 $0.517 250 $0.487 500 $0.457
IRF7406PBF DISTI #IRF7406PBF	Infineon Technologies AG	MOSFET, P, LOGIC, SO-8 RoHS: Compliant	0	1 $1.66 10 $1.41 100 $1.09 500 $0.956 1000 $0.755 2500 $0.669 10000 $0.644

Infineon Technologies IRF7406PBF

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