Infineon Technologies IRF7404TRPBF

Name: IRF7404TRPBF
Brand: Infineon Technologies
SKU: 2478628-IRF7404TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7404TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2478628-IRF7404TRPBF

Description:: MOSFET P-CH 20V 6.7A 8-SOIC

ECAD Model:

Datasheet:: IRF7404TRPBF

Specifications

Infineon Technologies IRF7404TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7404TRPBF.

Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2004
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Resistance
40mOhm
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-6.7A
Time@Peak Reflow Temperature-Max (s)
30
Number of Elements
1
Row Spacing
6.3 mm
Power Dissipation-Max
2.5W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Turn On Delay Time
14 ns
FET Type
P-Channel
Rds On (Max) @ Id, Vgs
40m Ω @ 3.2A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C
6.7A Ta
Gate Charge (Qg) (Max) @ Vgs
50nC @ 4.5V
Rise Time
32ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.7V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
65 ns
Turn-Off Delay Time
100 ns
Continuous Drain Current (ID)
-6.7A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
12V
Drain Current-Max (Abs) (ID)
5.3A
Drain to Source Breakdown Voltage
-20V
Dual Supply Voltage
-20V
Recovery Time
100 ns
Nominal Vgs
-700 mV
Height
1.4986mm
Length
4.9784mm
Width
3.9878mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF7404TRPBF Description
IRF7404TRPBF is a -20V Single P-Channel HEXFET Power MOSFET. Fith Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with a highly efficient device for use in a wide variety of applications.

IRF7404TRPBF Features
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature
P-Channel MOSFET

IRF7404TRPBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
Uninterruptible power supply
High-speed power switching
Hard switched and high-frequency circuits

IRF7404TRPBF More Descriptions

MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS /-12V
Single P-Channel 20 V 0.06 Ohm 50 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R - Tape and Reel
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:8-SOIC ;RoHS Compliant: Yes
MOSFET, P CH, -20V, -6.7A, SOIC-8; Transistor Polarity: P Channel; Continuous Drain Current Id: -6.7A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.04ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -7.7 / Drain-Source Voltage (Vds) V = -20 / ON Resistance (Rds(on)) mOhm = 40 / Gate-Source Voltage V = 12 / Fall Time ns = 65 / Rise Time ns = 32 / Turn-OFF Delay Time ns = 100 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5

Product Comparison

The three parts on the right have similar specifications to IRF7404TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Number of Elements

Row Spacing

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

HTS Code

JESD-30 Code

Qualification Status

Configuration

Transistor Application

JEDEC-95 Code

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Power Dissipation

Input Capacitance

Rds On Max

Weight

Pbfree Code

Number of Channels

Case Connection

View Compare
IRF7404TRPBF

Infineon Technologies

12 Weeks

Tin

Surface Mount

Surface Mount

8-SOIC (0.154, 3.90mm Width)

8

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2004

e3

Active

1 (Unlimited)

8

EAR99

40mOhm

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

GULL WING

260

-6.7A

30

1

6.3 mm

2.5W Ta

Single

ENHANCEMENT MODE

2.5W

14 ns

P-Channel

40m Ω @ 3.2A, 4.5V

700mV @ 250μA

1500pF @ 15V

6.7A Ta

50nC @ 4.5V

32ns

20V

2.7V 4.5V

±12V

65 ns

100 ns

-6.7A

-700mV

12V

5.3A

-20V

-20V

100 ns

-700 mV

1.4986mm

4.9784mm

3.9878mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7201TR

Infineon Technologies

-

-

-

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

-

Obsolete

1 (Unlimited)

8

EAR99

-

LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

-

NOT SPECIFIED

1

-

2.5W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

-

7.3A

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

8541.29.00.95

R-PDSO-G8

Not Qualified

SINGLE WITH BUILT-IN DIODE

SWITCHING

MS-012AA

0.03Ohm

58A

30V

70 mJ

-

-

-

-

-

-

-

-

IRF7404TRPBF vs IRF7201TR
IRF710L

Vishay Siliconix

-

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~150°C TJ

Tube

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

-

-

-

N-Channel

3.6Ohm @ 1.2A, 10V

4V @ 250μA

170pF @ 25V

2A Tc

17nC @ 10V

-

400V

10V

±20V

-

-

2A

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

I2PAK

3.1W

170pF

3.6 Ω

-

-

-

-

IRF7404TRPBF vs IRF710L
IRF720LPBF

Vishay Siliconix

12 Weeks

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

SILICON

-55°C~150°C TJ

Tube

-

2017

-

Active

1 (Unlimited)

3

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

3.1W Ta 50W Tc

Single

ENHANCEMENT MODE

-

10 ns

N-Channel

1.8 Ω @ 2A, 10V

4V @ 250μA

410pF @ 25V

3.3A Tc

20nC @ 10V

14ns

400V

10V

±20V

13 ns

30 ns

3.3A

-

20V

-

-

-

-

-

9.01mm

10.41mm

4.7mm

-

No

ROHS3 Compliant

-

-

-

-

-

-

SWITCHING

TO-220AB

-

-

400V

-

-

-

-

-

6.000006g

yes

1

DRAIN

IRF7404TRPBF vs IRF720LPBF