Infineon Technologies IRF7404QTRPBF
- Part Number:
- IRF7404QTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2853953-IRF7404QTRPBF
- Description:
- MOSFET P-CH 20V 6.7A 8-SOIC
- Datasheet:
- IRF7404QPbF
Infineon Technologies IRF7404QTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7404QTRPBF.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- PackagingCut Tape (CT)
- SeriesHEXFET®
- Published2015
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- SubcategoryOther Transistors
- Max Power Dissipation2.5W
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- ConfigurationSingle
- Power Dissipation2.5W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs40m Ω @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id700mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1500pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.7A Ta
- Gate Charge (Qg) (Max) @ Vgs50nC @ 4.5V
- Rise Time32ns
- Drain to Source Voltage (Vdss)20V
- Fall Time (Typ)65 ns
- Turn-Off Delay Time100 ns
- Continuous Drain Current (ID)-6.7A
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)7.7A
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
IRF7404QTRPBF Overview
A device's maximum input capacitance is 1500pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -6.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 7.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).
IRF7404QTRPBF Features
a continuous drain current (ID) of -6.7A
the turn-off delay time is 100 ns
a 20V drain to source voltage (Vdss)
IRF7404QTRPBF Applications
There are a lot of Infineon Technologies
IRF7404QTRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1500pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -6.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 7.7A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 100 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).
IRF7404QTRPBF Features
a continuous drain current (ID) of -6.7A
the turn-off delay time is 100 ns
a 20V drain to source voltage (Vdss)
IRF7404QTRPBF Applications
There are a lot of Infineon Technologies
IRF7404QTRPBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF7404QTRPBF More Descriptions
MOSFET, P-CHANNEL, -20V, -6.7A, 40 MOHM, 33.3 NC QG, SO-8, Q101 QUALIFIED
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
Mosfet IC; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-6.7A; On Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:12V; Package/Case:8-SOIC; No. of Pins:8 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF7404QTRPBF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsPackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Operating TemperatureMin Operating TemperatureSubcategoryMax Power DissipationTechnologyNumber of ElementsConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)HeightLengthWidthRadiation HardeningRoHS StatusSurface MountTransistor Element MaterialOperating TemperatureNumber of TerminationsAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusPower Dissipation-MaxOperating ModeTransistor ApplicationDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageInput CapacitanceRds On MaxFactory Lead TimeWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionView Compare
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IRF7404QTRPBFSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8Cut Tape (CT)HEXFET®2015Obsolete1 (Unlimited)EAR99150°C-55°COther Transistors2.5WMOSFET (Metal Oxide)1Single2.5W14 nsP-Channel40m Ω @ 3.2A, 4.5V700mV @ 250μA1500pF @ 15V6.7A Ta50nC @ 4.5V32ns20V65 ns100 ns-6.7A12V7.7A1.4986mm4.9784mm3.9878mmNoRoHS Compliant--------------------------------
-
-Surface Mount8-SOIC (0.154, 3.90mm Width)-Tape & Reel (TR)HEXFET®2003Obsolete1 (Unlimited)EAR99----MOSFET (Metal Oxide)1SINGLE WITH BUILT-IN DIODE--N-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V-30V----7.3A----Non-RoHS CompliantYESSILICON-55°C~150°C TJ8LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified2.5W TcENHANCEMENT MODESWITCHING4.5V 10V±20VMS-012AA0.03Ohm58A30V70 mJ---------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-Tube-2016Obsolete1 (Unlimited)----3.1WMOSFET (Metal Oxide)----N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V--2A------Non-RoHS Compliant---55°C~150°C TJ------------10V±20V-----I2PAK170pF3.6 Ω------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3Tube-2017Active1 (Unlimited)-----MOSFET (Metal Oxide)1--10 nsN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V13 ns30 ns3.3A20V-9.01mm10.41mm4.7mmNoROHS3 Compliant-SILICON-55°C~150°C TJ3--------3.1W Ta 50W TcENHANCEMENT MODESWITCHING10V±20VTO-220AB--400V----12 Weeks6.000006gyes1SingleDRAIN
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