Infineon Technologies IRF7403TR
- Part Number:
- IRF7403TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071591-IRF7403TR
- Description:
- MOSFET N-CH 30V 8.5A 8-SOIC
- ECAD Model:
-
- Datasheet:
- IRF7403TR
Infineon Technologies IRF7403TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7403TR.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs22m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1200pF @ 25V
- Current - Continuous Drain (Id) @ 25°C8.5A Ta
- Gate Charge (Qg) (Max) @ Vgs57nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)6.7A
- Drain-source On Resistance-Max0.022Ohm
- DS Breakdown Voltage-Min30V
- RoHS StatusNon-RoHS Compliant
IRF7403TR Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1200pF @ 25V.6.7A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF7403TR Features
a 30V drain to source voltage (Vdss)
IRF7403TR Applications
There are a lot of Infineon Technologies
IRF7403TR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1200pF @ 25V.6.7A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF7403TR Features
a 30V drain to source voltage (Vdss)
IRF7403TR Applications
There are a lot of Infineon Technologies
IRF7403TR applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF7403TR More Descriptions
Trans MOSFET N-CH 30V 8.5A 8-Pin SOIC T/R
MOSFET, 30V, 8.5A, 22 mOhm, 38 nC Qg, SO-8
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
MOSFET, 30V, 8.5A, 22 mOhm, 38 nC Qg, SO-8
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
The three parts on the right have similar specifications to IRF7403TR.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusHTS CodeTransistor ApplicationPulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)MountSupplier Device PackageMax Power DissipationContinuous Drain Current (ID)Input CapacitanceRds On MaxFactory Lead TimeNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningView Compare
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IRF7403TRSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEN-Channel22m Ω @ 4A, 10V1V @ 250μA1200pF @ 25V8.5A Ta57nC @ 10V30V4.5V 10V±20VMS-012AA6.7A0.022Ohm30VNon-RoHS Compliant--------------------------- -
Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003-Obsolete1 (Unlimited)8EAR99-LOGIC LEVEL COMPATIBLEMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not Qualified1SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODEN-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VMS-012AA7.3A0.03Ohm30VNon-RoHS Compliant8541.29.00.95SWITCHING58A70 mJ----------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----------N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V400V10V±20V----Non-RoHS Compliant----Through HoleI2PAK3.1W2A170pF3.6 Ω----------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTube-2017-Active1 (Unlimited)3---MOSFET (Metal Oxide)------1-3.1W Ta 50W TcENHANCEMENT MODEN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VTO-220AB--400VROHS3 Compliant-SWITCHING--Through Hole--3.3A--12 Weeks36.000006gyes1SingleDRAIN10 ns14ns13 ns30 ns20V9.01mm10.41mm4.7mmNo
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