STMicroelectronics IRF740
- Part Number:
- IRF740
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488466-IRF740
- Description:
- MOSFET N-CH 400V 10A TO-220
- Datasheet:
- IRF740
STMicroelectronics IRF740 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF740.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2012
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC400V
- TechnologyMOSFET (Metal Oxide)
- Current Rating10A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max125W Tc
- Element ConfigurationSingle
- Power Dissipation125W
- Turn On Delay Time14 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs550mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10A Tc
- Gate Charge (Qg) (Max) @ Vgs63nC @ 10V
- Rise Time27ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)24 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)10A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance1.4nF
- Drain to Source Resistance550mOhm
- Rds On Max550 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
IRF740 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 550mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF740 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740 Applications
There are a lot of Vishay Siliconix
IRF740 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1400pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 400V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 400V.As a result of its turn-off delay time, which is 50 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 550mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 14 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 400V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF740 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 50 ns
single MOSFETs transistor is 550mOhm
a 400V drain to source voltage (Vdss)
IRF740 Applications
There are a lot of Vishay Siliconix
IRF740 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
The three parts on the right have similar specifications to IRF740.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialSeriesNumber of TerminationsECCN CodeAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeTransistor ApplicationJEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationFactory Lead TimeResistanceOutput CurrentThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCView Compare
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IRF740Through HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2012Obsolete1 (Unlimited)150°C-55°C400VMOSFET (Metal Oxide)10A11125W TcSingle125W14 nsN-Channel550mOhm @ 6A, 10V4V @ 250μA1400pF @ 25V10A Tc63nC @ 10V27ns400V10V±20V24 ns50 ns10A20V400V1.4nF550mOhm550 mΩ9.01mm10.41mm4.7mmNoNon-RoHS CompliantContains Lead--------------------------------
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-Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2003Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-1-2.5W Tc---N-Channel30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V-30V4.5V 10V±20V------------Non-RoHS Compliant-YESSILICONHEXFET®8EAR99LOGIC LEVEL COMPATIBLE8541.29.00.95DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G8Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODESWITCHINGMS-012AA7.3A0.03Ohm58A30V70 mJ---------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)-------N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A--170pF-3.6 Ω----Non-RoHS Compliant-----------------------3.1W--------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)---20VMOSFET (Metal Oxide)-5.3A1-2.5W TcSingle2.5W14 nsP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V68 ns100 ns-5.3A12V-20V---1.4986mm4.9784mm3.9878mmNoROHS3 CompliantContains Lead, Lead Free-SILICONHEXFET®8-LOGIC LEVEL COMPATIBLE-DUALGULL WING-----ENHANCEMENT MODESWITCHING-------12 Weeks60mOhm5.3A-2.5V-20V100 ns-2.5 VNo SVHC
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