Vishay Siliconix IRF737LC
- Part Number:
- IRF737LC
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2850829-IRF737LC
- Description:
- MOSFET N-CH 300V 6.1A TO-220AB
- Datasheet:
- IRF737LC, SiHF737LC
Vishay Siliconix IRF737LC technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF737LC.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2009
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Channels1
- Power Dissipation-Max74W Tc
- Element ConfigurationSingle
- Turn On Delay Time6.6 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs750mOhm @ 3.7A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds430pF @ 25V
- Current - Continuous Drain (Id) @ 25°C6.1A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time21ns
- Drain to Source Voltage (Vdss)300V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time13 ns
- Continuous Drain Current (ID)6.1A
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage300V
- Input Capacitance430pF
- Drain to Source Resistance750mOhm
- Rds On Max750 mΩ
- Height9.01mm
- Length10.41mm
- Width4.7mm
- RoHS StatusNon-RoHS Compliant
IRF737LC Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 430pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.1A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 750mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF737LC Features
a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 750mOhm
a 300V drain to source voltage (Vdss)
IRF737LC Applications
There are a lot of Vishay Siliconix
IRF737LC applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 430pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.1A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 750mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF737LC Features
a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 750mOhm
a 300V drain to source voltage (Vdss)
IRF737LC Applications
There are a lot of Vishay Siliconix
IRF737LC applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF737LC More Descriptions
MOSFET N-CH 300V 6.1A TO-220AB
The three parts on the right have similar specifications to IRF737LC.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureTechnologyNumber of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceDrain to Source ResistanceRds On MaxHeightLengthWidthRoHS StatusTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Factory Lead TimeNumber of PinsPbfree CodeJEDEC-95 CodeRadiation HardeningSeriesResistanceAdditional FeatureVoltage - Rated DCCurrent RatingPower DissipationOutput CurrentThreshold VoltageDual Supply VoltageRecovery TimeNominal VgsREACH SVHCLead FreeView Compare
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IRF737LCThrough HoleThrough HoleTO-220-3TO-220AB6.000006g-55°C~150°C TJTube2009Obsolete1 (Unlimited)150°C-55°CMOSFET (Metal Oxide)174W TcSingle6.6 nsN-Channel750mOhm @ 3.7A, 10V4V @ 250μA430pF @ 25V6.1A Tc17nC @ 10V21ns300V10V±30V12 ns13 ns6.1A30V300V430pF750mOhm750 mΩ9.01mm10.41mm4.7mmNon-RoHS Compliant--------------------------------------
-
Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB---55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-3.1W Ta 50W Tc--N-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A--------Non-RoHS CompliantSILICON2FET General Purpose PowerSINGLEGULL WING225unknownNOT SPECIFIED3R-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A400V190 mJ------------------
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Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-6.000006g-55°C~150°C TJTube2017Active1 (Unlimited)--MOSFET (Metal Oxide)13.1W Ta 50W TcSingle10 nsN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A20V----9.01mm10.41mm4.7mmROHS3 CompliantSILICON3---------1-ENHANCEMENT MODEDRAINSWITCHING-400V-12 Weeks3yesTO-220ABNo-------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)--MOSFET (Metal Oxide)-2.5W TcSingle14 nsP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V68 ns100 ns-5.3A12V-20V---1.4986mm4.9784mm3.9878mmROHS3 CompliantSILICON8-DUALGULL WING------1-ENHANCEMENT MODE-SWITCHING---12 Weeks8--NoHEXFET®60mOhmLOGIC LEVEL COMPATIBLE-20V-5.3A2.5W5.3A-2.5V-20V100 ns-2.5 VNo SVHCContains Lead, Lead Free
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