IRF737LC

Vishay Siliconix IRF737LC

Part Number:
IRF737LC
Manufacturer:
Vishay Siliconix
Ventron No:
2850829-IRF737LC
Description:
MOSFET N-CH 300V 6.1A TO-220AB
ECAD Model:
Datasheet:
IRF737LC, SiHF737LC

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Specifications
Vishay Siliconix IRF737LC technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF737LC.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Channels
    1
  • Power Dissipation-Max
    74W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    6.6 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    750mOhm @ 3.7A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    430pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    6.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    21ns
  • Drain to Source Voltage (Vdss)
    300V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    6.1A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    300V
  • Input Capacitance
    430pF
  • Drain to Source Resistance
    750mOhm
  • Rds On Max
    750 mΩ
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • RoHS Status
    Non-RoHS Compliant
Description
IRF737LC Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 430pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 6.1A.With a drain-source breakdown voltage of 300V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 300V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 13 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 750mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 6.6 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 300V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF737LC Features
a continuous drain current (ID) of 6.1A
a drain-to-source breakdown voltage of 300V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 750mOhm
a 300V drain to source voltage (Vdss)


IRF737LC Applications
There are a lot of Vishay Siliconix
IRF737LC applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF737LC More Descriptions
MOSFET N-CH 300V 6.1A TO-220AB
Product Comparison
The three parts on the right have similar specifications to IRF737LC.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Height
    Length
    Width
    RoHS Status
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Factory Lead Time
    Number of Pins
    Pbfree Code
    JEDEC-95 Code
    Radiation Hardening
    Series
    Resistance
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Output Current
    Threshold Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • IRF737LC
    IRF737LC
    Through Hole
    Through Hole
    TO-220-3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    74W Tc
    Single
    6.6 ns
    N-Channel
    750mOhm @ 3.7A, 10V
    4V @ 250μA
    430pF @ 25V
    6.1A Tc
    17nC @ 10V
    21ns
    300V
    10V
    ±30V
    12 ns
    13 ns
    6.1A
    30V
    300V
    430pF
    750mOhm
    750 mΩ
    9.01mm
    10.41mm
    4.7mm
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    3.1W Ta 50W Tc
    -
    -
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    SILICON
    2
    FET General Purpose Power
    SINGLE
    GULL WING
    225
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    400V
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720LPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    6.000006g
    -55°C~150°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    1
    3.1W Ta 50W Tc
    Single
    10 ns
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    20V
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    ROHS3 Compliant
    SILICON
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    400V
    -
    12 Weeks
    3
    yes
    TO-220AB
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    2.5W Tc
    Single
    14 ns
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    12V
    -20V
    -
    -
    -
    1.4986mm
    4.9784mm
    3.9878mm
    ROHS3 Compliant
    SILICON
    8
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    1
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    -
    12 Weeks
    8
    -
    -
    No
    HEXFET®
    60mOhm
    LOGIC LEVEL COMPATIBLE
    -20V
    -5.3A
    2.5W
    5.3A
    -2.5V
    -20V
    100 ns
    -2.5 V
    No SVHC
    Contains Lead, Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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