IRF730

STMicroelectronics IRF730

Part Number:
IRF730
Manufacturer:
STMicroelectronics
Ventron No:
2488522-IRF730
Description:
MOSFET N-CH 400V 5.5A TO-220
ECAD Model:
Datasheet:
IRF730

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  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
  • IRF730 Detail Images
Specifications
STMicroelectronics IRF730 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF730.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Surface Mount
    NO
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • JESD-30 Code
    R-PSFM-T3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    74W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1 Ω @ 3.3A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    700pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    5.5A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    38nC @ 10V
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • JEDEC-95 Code
    TO-220AB
  • Drain Current-Max (Abs) (ID)
    5.5A
  • Drain-source On Resistance-Max
    1Ohm
  • Pulsed Drain Current-Max (IDM)
    22A
  • DS Breakdown Voltage-Min
    400V
  • RoHS Status
    Non-RoHS Compliant
Description
IRF730 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 22A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IRF730 Features
based on its rated peak drain current 22A.
a 400V drain to source voltage (Vdss)


IRF730 Applications
There are a lot of Rochester Electronics, LLC
IRF730 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF730 More Descriptions
Electronics IRF730 Power MOSFET N-channel 400V ID=5.5A TO-220 Case Fast Switching
MOSFET N-CH 400V 5.5A TO220
IRF730 Detail Images
Product Comparison
The three parts on the right have similar specifications to IRF730.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Mount
    Published
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Continuous Drain Current (ID)
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Power Dissipation
    Input Capacitance
    Rds On Max
    Factory Lead Time
    Number of Pins
    Weight
    Pbfree Code
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    View Compare
  • IRF730
    IRF730
    Through Hole
    TO-220-3
    NO
    SILICON
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    SINGLE
    R-PSFM-T3
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    74W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    1 Ω @ 3.3A, 10V
    4V @ 250μA
    700pF @ 25V
    5.5A Tc
    38nC @ 10V
    400V
    10V
    ±20V
    TO-220AB
    5.5A
    1Ohm
    22A
    400V
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    Obsolete
    1 (Unlimited)
    2
    MOSFET (Metal Oxide)
    SINGLE
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.1W Ta 50W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    -
    -
    -
    13A
    400V
    Non-RoHS Compliant
    Surface Mount
    2017
    FET General Purpose Power
    GULL WING
    225
    unknown
    NOT SPECIFIED
    3
    3.3A
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF710L
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    -
    N-Channel
    -
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    400V
    10V
    ±20V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Through Hole
    2016
    -
    -
    -
    -
    -
    -
    2A
    -
    I2PAK
    3.1W
    170pF
    3.6 Ω
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720LPBF
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    -
    -
    -
    1
    -
    3.1W Ta 50W Tc
    ENHANCEMENT MODE
    DRAIN
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    TO-220AB
    -
    -
    -
    400V
    ROHS3 Compliant
    Through Hole
    2017
    -
    -
    -
    -
    -
    -
    3.3A
    -
    -
    -
    -
    -
    12 Weeks
    3
    6.000006g
    yes
    1
    Single
    10 ns
    14ns
    13 ns
    30 ns
    20V
    9.01mm
    10.41mm
    4.7mm
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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