STMicroelectronics IRF730
- Part Number:
- IRF730
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2488522-IRF730
- Description:
- MOSFET N-CH 400V 5.5A TO-220
- Datasheet:
- IRF730
STMicroelectronics IRF730 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics IRF730.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- JESD-30 CodeR-PSFM-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max74W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1 Ω @ 3.3A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C5.5A Tc
- Gate Charge (Qg) (Max) @ Vgs38nC @ 10V
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- JEDEC-95 CodeTO-220AB
- Drain Current-Max (Abs) (ID)5.5A
- Drain-source On Resistance-Max1Ohm
- Pulsed Drain Current-Max (IDM)22A
- DS Breakdown Voltage-Min400V
- RoHS StatusNon-RoHS Compliant
IRF730 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 22A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF730 Features
based on its rated peak drain current 22A.
a 400V drain to source voltage (Vdss)
IRF730 Applications
There are a lot of Rochester Electronics, LLC
IRF730 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 5.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 22A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 400V in order to maintain normal operation.Operating this transistor requires a 400V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF730 Features
based on its rated peak drain current 22A.
a 400V drain to source voltage (Vdss)
IRF730 Applications
There are a lot of Rochester Electronics, LLC
IRF730 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
IRF730 More Descriptions
Electronics IRF730 Power MOSFET N-channel 400V ID=5.5A TO-220 Case Fast Switching
MOSFET N-CH 400V 5.5A TO220
MOSFET N-CH 400V 5.5A TO220
The three parts on the right have similar specifications to IRF730.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusMountPublishedSubcategoryTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountContinuous Drain Current (ID)Avalanche Energy Rating (Eas)Supplier Device PackageMax Power DissipationInput CapacitanceRds On MaxFactory Lead TimeNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningView Compare
-
IRF730Through HoleTO-220-3NOSILICON-55°C~150°C TJTubeObsolete1 (Unlimited)3MOSFET (Metal Oxide)SINGLER-PSFM-T3COMMERCIAL1SINGLE WITH BUILT-IN DIODE74W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING1 Ω @ 3.3A, 10V4V @ 250μA700pF @ 25V5.5A Tc38nC @ 10V400V10V±20VTO-220AB5.5A1Ohm22A400VNon-RoHS Compliant------------------------------
-
Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)Obsolete1 (Unlimited)2MOSFET (Metal Oxide)SINGLER-PSSO-G2Not Qualified1SINGLE WITH BUILT-IN DIODE3.1W Ta 50W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20V---13A400VNon-RoHS CompliantSurface Mount2017FET General Purpose PowerGULL WING225unknownNOT SPECIFIED33.3A190 mJ-------------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTubeObsolete1 (Unlimited)-MOSFET (Metal Oxide)--------N-Channel-3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V400V10V±20V-----Non-RoHS CompliantThrough Hole2016------2A-I2PAK3.1W170pF3.6 Ω---------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTubeActive1 (Unlimited)3MOSFET (Metal Oxide)---1-3.1W Ta 50W TcENHANCEMENT MODEDRAINN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VTO-220AB---400VROHS3 CompliantThrough Hole2017------3.3A-----12 Weeks36.000006gyes1Single10 ns14ns13 ns30 ns20V9.01mm10.41mm4.7mmNo
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
08 March 2024
A Complete Guide to the TP4056 Battery Charger Module
Ⅰ. What is TP4056?Ⅱ. Block diagram of TP4056Ⅲ. Main parameters of TP4056Ⅳ. Pins and functions of TP4056Ⅴ. TP4056 charging circuit diagram explanationⅥ. Battery charging process of TP4056Ⅶ. Application... -
08 March 2024
In-depth Analysis of SS34 Schottky Diode
Ⅰ. Overview of SS34Ⅱ. Purpose of SS34 diodeⅢ. Technical parameters of SS34 diodeⅣ. Advantages of SS34 diodesⅤ. Working principle of SS34 diodeⅥ. Typical characteristics of SS34 diodesⅦ. Case... -
11 March 2024
BTS50085-1TMA Specifications, Functions, Purpose and More
Ⅰ. What is BTS50085-1TMA?Ⅱ. Specifications of BTS50085-1TMAⅢ. What are the functions of BTS50085-1TMA?Ⅳ. Inverse load current operation of BTS50085-1TMAⅤ. Externally adjustable current limit of BTS50085-1TMAⅥ. How to use... -
11 March 2024
LM317: Ideal for Adjustable, High-Efficiency Three-Terminal Regulators
Ⅰ. Introduction to LM317Ⅱ. The function of LM317 adjustable voltage stabilized power supply voltage stabilizing circuitⅢ. Soft-start circuit of LM317Ⅳ. Minimum stable operating current of LM317Ⅴ. Calculation of...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.