Infineon Technologies IRF7240TR
- Part Number:
- IRF7240TR
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586837-IRF7240TR
- Description:
- MOSFET P-CH 40V 10.5A 8-SOIC
- Datasheet:
- IRF7240
Infineon Technologies IRF7240TR technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7240TR.
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2012
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- Additional FeatureULTRA LOW RESISTANCE
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-G8
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.5W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs15m Ω @ 10.5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds9250pF @ 25V
- Current - Continuous Drain (Id) @ 25°C10.5A Ta
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- JEDEC-95 CodeMS-012AA
- Drain Current-Max (Abs) (ID)10.5A
- Drain-source On Resistance-Max0.015Ohm
- Pulsed Drain Current-Max (IDM)43A
- DS Breakdown Voltage-Min40V
- RoHS StatusNon-RoHS Compliant
IRF7240TR Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9250pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 10.5A.Pulsed drain current is maximum rated peak drain current 43A.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF7240TR Features
based on its rated peak drain current 43A.
a 40V drain to source voltage (Vdss)
IRF7240TR Applications
There are a lot of Infineon Technologies
IRF7240TR applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 9250pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 10.5A.Pulsed drain current is maximum rated peak drain current 43A.A normal operation of the DS requires keeping the breakdown voltage above 40V.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF7240TR Features
based on its rated peak drain current 43A.
a 40V drain to source voltage (Vdss)
IRF7240TR Applications
There are a lot of Infineon Technologies
IRF7240TR applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF7240TR More Descriptions
MOSFET, P-CHANNEL, -40V, -10.5A, 15 mOhm, 73 nC Qg, SO-8
Trans MOSFET P-CH 40V 10.5A 8-Pin SOIC T/R
Power Field-Effect Transistor, 10.5A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Trans MOSFET P-CH 40V 10.5A 8-Pin SOIC T/R
Power Field-Effect Transistor, 10.5A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The three parts on the right have similar specifications to IRF7240TR.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)JEDEC-95 CodeDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinRoHS StatusQualification StatusAvalanche Energy Rating (Eas)MountSupplier Device PackageMax Power DissipationContinuous Drain Current (ID)Input CapacitanceRds On MaxFactory Lead TimeNumber of PinsWeightPbfree CodeNumber of ChannelsElement ConfigurationCase ConnectionTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningView Compare
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IRF7240TRSurface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2012e3Obsolete1 (Unlimited)8EAR99Matte Tin (Sn)ULTRA LOW RESISTANCE8541.21.00.95Other TransistorsMOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81SINGLE WITH BUILT-IN DIODE2.5W TaENHANCEMENT MODEP-ChannelSWITCHING15m Ω @ 10.5A, 10V3V @ 250μA9250pF @ 25V10.5A Ta110nC @ 10V40V4.5V 10V±20VMS-012AA10.5A0.015Ohm43A40VNon-RoHS Compliant-------------------------
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Surface Mount8-SOIC (0.154, 3.90mm Width)YESSILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2003-Obsolete1 (Unlimited)8EAR99-LOGIC LEVEL COMPATIBLE8541.29.00.95-MOSFET (Metal Oxide)DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDR-PDSO-G81SINGLE WITH BUILT-IN DIODE2.5W TcENHANCEMENT MODEN-ChannelSWITCHING30m Ω @ 7.3A, 10V1V @ 250μA550pF @ 25V7.3A Tc28nC @ 10V30V4.5V 10V±20VMS-012AA7.3A0.03Ohm58A30VNon-RoHS CompliantNot Qualified70 mJ----------------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~150°C TJTube-2016-Obsolete1 (Unlimited)------MOSFET (Metal Oxide)---------N-Channel-3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V400V10V±20V-----Non-RoHS Compliant--Through HoleI2PAK3.1W2A170pF3.6 Ω----------------
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Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-SILICON-55°C~150°C TJTube-2017-Active1 (Unlimited)3-----MOSFET (Metal Oxide)-----1-3.1W Ta 50W TcENHANCEMENT MODEN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V400V10V±20VTO-220AB---400VROHS3 Compliant--Through Hole--3.3A--12 Weeks36.000006gyes1SingleDRAIN10 ns14ns13 ns30 ns20V9.01mm10.41mm4.7mmNo
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