IRF720PBF

Vishay Siliconix IRF720PBF

Part Number:
IRF720PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478714-IRF720PBF
Description:
MOSFET N-CH 400V 3.3A TO-220AB
ECAD Model:
Datasheet:
IRF720PBF

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Specifications
Vishay Siliconix IRF720PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF720PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    1.8Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Voltage
    400V
  • Power Dissipation-Max
    50W Tc
  • Element Configuration
    Single
  • Current
    33A
  • Power Dissipation
    50W
  • Turn On Delay Time
    10 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.8Ohm @ 2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    410pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    3.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 10V
  • Rise Time
    14ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    3.3A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    410pF
  • Recovery Time
    600 ns
  • Drain to Source Resistance
    1.8Ohm
  • Rds On Max
    1.8 Ω
  • Nominal Vgs
    4 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF720PBF Overview
A device's maximum input capacitance is 410pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.8Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF720PBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)


IRF720PBF Applications
There are a lot of Vishay Siliconix
IRF720PBF applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF720PBF More Descriptions
Single N-Channel 400 V 1.8 Ohms Flange Mount Power Mosfet - TO-220-3
MOSFET N-CH 400V 3.3A TO-220AB | Siliconix / Vishay IRF720PBF
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 3.3A To-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRF720PBF.
Product Comparison
The three parts on the right have similar specifications to IRF720PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Voltage
    Power Dissipation-Max
    Element Configuration
    Current
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Output Current
    Dual Supply Voltage
    View Compare
  • IRF720PBF
    IRF720PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    1997
    Active
    1 (Unlimited)
    1.8Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    400V
    50W Tc
    Single
    33A
    50W
    10 ns
    N-Channel
    1.8Ohm @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    4V
    20V
    400V
    410pF
    600 ns
    1.8Ohm
    1.8 Ω
    4 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7207TR
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    2.5W Tc
    -
    -
    -
    -
    P-Channel
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    780pF @ 15V
    5.4A Tc
    22nC @ 4.5V
    -
    20V
    2.7V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    -
    3.1W Ta 50W Tc
    -
    -
    -
    -
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    SILICON
    2
    FET General Purpose Power
    SINGLE
    GULL WING
    225
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    400V
    190 mJ
    -
    -
    -
    -
    -
  • IRF7204TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    1997
    Active
    1 (Unlimited)
    60mOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    -
    2.5W Tc
    Single
    -
    2.5W
    14 ns
    P-Channel
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    26ns
    20V
    4.5V 10V
    ±12V
    68 ns
    100 ns
    -5.3A
    -2.5V
    12V
    -20V
    -
    100 ns
    -
    -
    -2.5 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    HEXFET®
    SILICON
    8
    -
    DUAL
    GULL WING
    -
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    -
    SWITCHING
    -
    -
    -
    LOGIC LEVEL COMPATIBLE
    -20V
    -5.3A
    5.3A
    -20V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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