Vishay Siliconix IRF720PBF
- Part Number:
- IRF720PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478714-IRF720PBF
- Description:
- MOSFET N-CH 400V 3.3A TO-220AB
- Datasheet:
- IRF720PBF
Vishay Siliconix IRF720PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF720PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance1.8Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Voltage400V
- Power Dissipation-Max50W Tc
- Element ConfigurationSingle
- Current33A
- Power Dissipation50W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.8Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds410pF @ 25V
- Current - Continuous Drain (Id) @ 25°C3.3A Tc
- Gate Charge (Qg) (Max) @ Vgs20nC @ 10V
- Rise Time14ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)3.3A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance410pF
- Recovery Time600 ns
- Drain to Source Resistance1.8Ohm
- Rds On Max1.8 Ω
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF720PBF Overview
A device's maximum input capacitance is 410pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.8Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF720PBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF720PBF Applications
There are a lot of Vishay Siliconix
IRF720PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 410pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 3.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=400V, and this device has a drain-to-source breakdown voltage of 400V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 30 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 1.8Ohm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.To operate this transistor, you need to apply a 400V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF720PBF Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 1.8Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF720PBF Applications
There are a lot of Vishay Siliconix
IRF720PBF applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IRF720PBF More Descriptions
Single N-Channel 400 V 1.8 Ohms Flange Mount Power Mosfet - TO-220-3
MOSFET N-CH 400V 3.3A TO-220AB | Siliconix / Vishay IRF720PBF
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 3.3A To-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRF720PBF.
MOSFET N-CH 400V 3.3A TO-220AB | Siliconix / Vishay IRF720PBF
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 3.3A To-220; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.3A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: No |Vishay IRF720PBF.
The three parts on the right have similar specifications to IRF720PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsVoltagePower Dissipation-MaxElement ConfigurationCurrentPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Additional FeatureVoltage - Rated DCCurrent RatingOutput CurrentDual Supply VoltageView Compare
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IRF720PBF8 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube1997Active1 (Unlimited)1.8Ohm150°C-55°CMOSFET (Metal Oxide)11400V50W TcSingle33A50W10 nsN-Channel1.8Ohm @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A4V20V400V410pF600 ns1.8Ohm1.8 Ω4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free-------------------------
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--Surface Mount8-SOIC (0.154, 3.90mm Width)----55°C~150°C TJTape & Reel (TR)2000Obsolete1 (Unlimited)---MOSFET (Metal Oxide)---2.5W Tc----P-Channel60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V-20V2.7V 4.5V±12V----------------Non-RoHS Compliant-HEXFET®-----------------------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1--3.1W Ta 50W Tc----N-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A-------------Non-RoHS Compliant--SILICON2FET General Purpose PowerSINGLEGULL WING225unknownNOT SPECIFIED3R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A400V190 mJ-----
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12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8---55°C~150°C TJTape & Reel (TR)1997Active1 (Unlimited)60mOhm--MOSFET (Metal Oxide)1--2.5W TcSingle-2.5W14 nsP-Channel60m Ω @ 5.3A, 10V2.5V @ 250μA860pF @ 10V5.3A Ta25nC @ 10V26ns20V4.5V 10V±12V68 ns100 ns-5.3A-2.5V12V-20V-100 ns---2.5 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantContains Lead, Lead FreeHEXFET®SILICON8-DUALGULL WING-------ENHANCEMENT MODE-SWITCHING---LOGIC LEVEL COMPATIBLE-20V-5.3A5.3A-20V
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