IRF7205TRPBF

Infineon Technologies IRF7205TRPBF

Part Number:
IRF7205TRPBF
Manufacturer:
Infineon Technologies
Ventron No:
3586235-IRF7205TRPBF
Description:
MOSFET P-CH 30V 4.6A 8-SOIC
ECAD Model:
Datasheet:
IRF7205TRPBF

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Specifications
Infineon Technologies IRF7205TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7205TRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Number of Pins
    8
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Resistance
    70mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -5.3A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.5W
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    70m Ω @ 4.6A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    870pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    4.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    40nC @ 10V
  • Rise Time
    21ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    71 ns
  • Turn-Off Delay Time
    97 ns
  • Continuous Drain Current (ID)
    -4.6A
  • Threshold Voltage
    -3V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Dual Supply Voltage
    -30V
  • Recovery Time
    100 ns
  • Nominal Vgs
    -3 V
  • Height
    1.4986mm
  • Length
    4.9784mm
  • Width
    3.9878mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF7205TRPBF Description
IRF7205TRPBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7205TRPBF is -55°C~150°C TJ and its maximum power dissipation is 2.5W. IRF7205TRPBF has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of the IRF7205TRPBF is 14 ns and its Turn-Off Delay Time is 97 ns.

IRF7205TRPBF Features
Continuous Drain Current (ID): -4.6A
Gate to Source Voltage (Vgs): 20V
Dual Supply Voltage: -30V
Drain to Source Breakdown Voltage: -30V

IRF7205TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7205TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS /-20V
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
Single P-Channel 30V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Tran; P CHANNEL MOSFET, -30V, 4.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-3V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.6 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 97 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Product Comparison
The three parts on the right have similar specifications to IRF7205TRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Case Connection
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Weight
    Pbfree Code
    Number of Channels
    JEDEC-95 Code
    View Compare
  • IRF7205TRPBF
    IRF7205TRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    e3
    Active
    1 (Unlimited)
    8
    EAR99
    70mOhm
    Matte Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    -5.3A
    30
    1
    2.5W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    14 ns
    P-Channel
    SWITCHING
    70m Ω @ 4.6A, 10V
    3V @ 250μA
    870pF @ 10V
    4.6A Ta
    40nC @ 10V
    21ns
    30V
    4.5V 10V
    ±20V
    71 ns
    97 ns
    -4.6A
    -3V
    20V
    -30V
    -30V
    100 ns
    -3 V
    1.4986mm
    4.9784mm
    3.9878mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF7207TR
    -
    -
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2000
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    2.5W Tc
    -
    -
    -
    -
    P-Channel
    -
    60m Ω @ 5.4A, 4.5V
    700mV @ 250μA
    780pF @ 15V
    5.4A Tc
    22nC @ 4.5V
    -
    20V
    2.7V 4.5V
    ±12V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    -
    NOT SPECIFIED
    1
    3.1W Ta 50W Tc
    -
    ENHANCEMENT MODE
    -
    -
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    unknown
    3
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    DRAIN
    13A
    400V
    190 mJ
    -
    -
    -
    -
  • IRF720LPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    -
    Active
    1 (Unlimited)
    3
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    3.1W Ta 50W Tc
    Single
    ENHANCEMENT MODE
    -
    10 ns
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    -
    20V
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    DRAIN
    -
    400V
    -
    6.000006g
    yes
    1
    TO-220AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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