Infineon Technologies IRF7205TRPBF
- Part Number:
- IRF7205TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586235-IRF7205TRPBF
- Description:
- MOSFET P-CH 30V 4.6A 8-SOIC
- Datasheet:
- IRF7205TRPBF
Infineon Technologies IRF7205TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7205TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published1997
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Resistance70mOhm
- Terminal FinishMatte Tin (Sn)
- Additional FeatureLOGIC LEVEL COMPATIBLE
- SubcategoryOther Transistors
- Voltage - Rated DC-30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-5.3A
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements1
- Power Dissipation-Max2.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.5W
- Turn On Delay Time14 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs70m Ω @ 4.6A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds870pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4.6A Ta
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Rise Time21ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)71 ns
- Turn-Off Delay Time97 ns
- Continuous Drain Current (ID)-4.6A
- Threshold Voltage-3V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- Recovery Time100 ns
- Nominal Vgs-3 V
- Height1.4986mm
- Length4.9784mm
- Width3.9878mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF7205TRPBF Description
IRF7205TRPBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7205TRPBF is -55°C~150°C TJ and its maximum power dissipation is 2.5W. IRF7205TRPBF has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of the IRF7205TRPBF is 14 ns and its Turn-Off Delay Time is 97 ns.
IRF7205TRPBF Features
Continuous Drain Current (ID): -4.6A
Gate to Source Voltage (Vgs): 20V
Dual Supply Voltage: -30V
Drain to Source Breakdown Voltage: -30V
IRF7205TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7205TRPBF is a P-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7205TRPBF is -55°C~150°C TJ and its maximum power dissipation is 2.5W. IRF7205TRPBF has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of the IRF7205TRPBF is 14 ns and its Turn-Off Delay Time is 97 ns.
IRF7205TRPBF Features
Continuous Drain Current (ID): -4.6A
Gate to Source Voltage (Vgs): 20V
Dual Supply Voltage: -30V
Drain to Source Breakdown Voltage: -30V
IRF7205TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF7205TRPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS /-20V
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
Single P-Channel 30V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Tran; P CHANNEL MOSFET, -30V, 4.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-3V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.6 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 97 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Trans MOSFET P-CH Si 30V 4.6A 8-Pin SOIC N T/R / MOSFET P-CH 30V 4.6A 8-SOIC
Single P-Channel 30V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P CHANNEL MOSFET, -30V, 4.6A, SOIC; Tran; P CHANNEL MOSFET, -30V, 4.6A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.6A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):130mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-3V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -4.6 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 20 / Fall Time ns = 71 / Rise Time ns = 21 / Turn-OFF Delay Time ns = 97 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
The three parts on the right have similar specifications to IRF7205TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Number of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageRecovery TimeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeReach Compliance CodePin CountJESD-30 CodeQualification StatusConfigurationCase ConnectionPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)WeightPbfree CodeNumber of ChannelsJEDEC-95 CodeView Compare
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IRF7205TRPBF12 WeeksSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®1997e3Active1 (Unlimited)8EAR9970mOhmMatte Tin (Sn)LOGIC LEVEL COMPATIBLEOther Transistors-30VMOSFET (Metal Oxide)DUALGULL WING260-5.3A3012.5W TcSingleENHANCEMENT MODE2.5W14 nsP-ChannelSWITCHING70m Ω @ 4.6A, 10V3V @ 250μA870pF @ 10V4.6A Ta40nC @ 10V21ns30V4.5V 10V±20V71 ns97 ns-4.6A-3V20V-30V-30V100 ns-3 V1.4986mm4.9784mm3.9878mmNo SVHCNoROHS3 CompliantLead Free--------------
-
--Surface Mount8-SOIC (0.154, 3.90mm Width)---55°C~150°C TJTape & Reel (TR)HEXFET®2000-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)------2.5W Tc----P-Channel-60m Ω @ 5.4A, 4.5V700mV @ 250μA780pF @ 15V5.4A Tc22nC @ 4.5V-20V2.7V 4.5V±12V--------------Non-RoHS Compliant--------------
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~150°C TJTape & Reel (TR)-2017-Obsolete1 (Unlimited)2----FET General Purpose Power-MOSFET (Metal Oxide)SINGLEGULL WING225-NOT SPECIFIED13.1W Ta 50W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A-----------Non-RoHS Compliant-unknown3R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEDRAIN13A400V190 mJ----
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12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3SILICON-55°C~150°C TJTube-2017-Active1 (Unlimited)3------MOSFET (Metal Oxide)-----13.1W Ta 50W TcSingleENHANCEMENT MODE-10 nsN-ChannelSWITCHING1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A-20V----9.01mm10.41mm4.7mm-NoROHS3 Compliant------DRAIN-400V-6.000006gyes1TO-220AB
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