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IRF7204PBF

Infineon Technologies IRF7204PBF

Part Number:
IRF7204PBF
Manufacturer:
Infineon Technologies
Ventron No:
2480312-IRF7204PBF
Description:
MOSFET P-CH 20V 5.3A 8-SOIC
ECAD Model:
Datasheet:
IRF7204PBF

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Specifications
Infineon Technologies IRF7204PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7204PBF.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    8-SOIC (0.154, 3.90mm Width)
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    1997
  • JESD-609 Code
    e3
  • Part Status
    Discontinued
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    8
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • JESD-30 Code
    R-PDSO-G8
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.5W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 5.3A, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    860pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    5.3A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    25nC @ 10V
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±12V
  • JEDEC-95 Code
    MS-012AA
  • Drain Current-Max (Abs) (ID)
    5.3A
  • Drain-source On Resistance-Max
    0.06Ohm
  • Pulsed Drain Current-Max (IDM)
    21A
  • DS Breakdown Voltage-Min
    20V
  • RoHS Status
    ROHS3 Compliant
Description
IRF7204PBF Description IRF7204PBF is a 20V Single P-Channel HEXFET Power MOSFET in a SO-8 package. International Rectifier's IRF7204PBF HEXFETs is of the fourth generation and utilize advanced processing techniques to achieve the lowest on-resistance possible per silicon area.
IRF7204PBF Features Fast Switching
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fully Avalanche Rated
175??C Operating Temperature
P-Channel MOSFET
IRF7204PBF Applications Motor drivers
DC-DC converters
Power amplifiers
Power switching
IRF7204PBF More Descriptions
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.06Ohm;ID -5.3A;SO-8;PD 2.5W;VGS /-12V
Transistor MOSFET P Channel 20 Volt 5.3 Amp 8 Pin SOIC
Single P-Channel 20 V 0.06 Ohm 25 nC HEXFET® Power Mosfet - SOIC-8
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHSInfineon SCT
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5.3A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:21A; SMD Marking:F7204; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-2.5V; Voltage Vgs Rds on Measurement:-10V
Product Comparison
The three parts on the right have similar specifications to IRF7204PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    RoHS Status
    Mount
    Reach Compliance Code
    Pin Count
    Case Connection
    Continuous Drain Current (ID)
    Avalanche Energy Rating (Eas)
    Number of Pins
    Weight
    Pbfree Code
    Number of Channels
    Element Configuration
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    Resistance
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Power Dissipation
    Output Current
    Threshold Voltage
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Recovery Time
    Nominal Vgs
    REACH SVHC
    Lead Free
    View Compare
  • IRF7204PBF
    IRF7204PBF
    Infineon Technologies
    14 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    YES
    SILICON
    -55°C~150°C TJ
    Tube
    HEXFET®
    1997
    e3
    Discontinued
    1 (Unlimited)
    8
    EAR99
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    NOT SPECIFIED
    NOT SPECIFIED
    R-PDSO-G8
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    2.5W Tc
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    20V
    4.5V 10V
    ±12V
    MS-012AA
    5.3A
    0.06Ohm
    21A
    20V
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    IRF720STRL
    Vishay Siliconix
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    2017
    -
    Obsolete
    1 (Unlimited)
    2
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE
    GULL WING
    225
    NOT SPECIFIED
    R-PSSO-G2
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    3.1W Ta 50W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    -
    -
    -
    13A
    400V
    Non-RoHS Compliant
    Surface Mount
    unknown
    3
    DRAIN
    3.3A
    190 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7204PBF vs IRF720STRL
  • IRF720LPBF
    IRF720LPBF
    Vishay Siliconix
    12 Weeks
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2017
    -
    Active
    1 (Unlimited)
    3
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    -
    3.1W Ta 50W Tc
    ENHANCEMENT MODE
    N-Channel
    SWITCHING
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    400V
    10V
    ±20V
    TO-220AB
    -
    -
    -
    400V
    ROHS3 Compliant
    Through Hole
    -
    -
    DRAIN
    3.3A
    -
    3
    6.000006g
    yes
    1
    Single
    10 ns
    14ns
    13 ns
    30 ns
    20V
    9.01mm
    10.41mm
    4.7mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    IRF7204PBF vs IRF720LPBF
  • IRF7204TRPBF
    IRF7204TRPBF
    Infineon Technologies
    12 Weeks
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    1997
    -
    Active
    1 (Unlimited)
    8
    -
    -
    -
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    -
    -
    -
    -
    1
    -
    2.5W Tc
    ENHANCEMENT MODE
    P-Channel
    SWITCHING
    60m Ω @ 5.3A, 10V
    2.5V @ 250μA
    860pF @ 10V
    5.3A Ta
    25nC @ 10V
    20V
    4.5V 10V
    ±12V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Surface Mount
    -
    -
    -
    -5.3A
    -
    8
    -
    -
    -
    Single
    14 ns
    26ns
    68 ns
    100 ns
    12V
    1.4986mm
    4.9784mm
    3.9878mm
    No
    60mOhm
    LOGIC LEVEL COMPATIBLE
    -20V
    -5.3A
    2.5W
    5.3A
    -2.5V
    -20V
    -20V
    100 ns
    -2.5 V
    No SVHC
    Contains Lead, Lead Free
    IRF7204PBF vs IRF7204TRPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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