Infineon Technologies IRF7204

Name: IRF7204
Brand: Infineon Technologies
SKU: 2492498-IRF7204
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF7204

Manufacturer:: Infineon Technologies

Ventron No:: 2492498-IRF7204

Description:: MOSFET P-CH 20V 5.3A 8-SOIC

ECAD Model:

Datasheet:: IRF7204

Part Pictures

Specifications

Infineon Technologies IRF7204 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF7204.

Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154, 3.90mm Width)
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1997
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
LOGIC LEVEL COMPATIBLE
HTS Code
8541.29.00.95
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PDSO-G8
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 5.3A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
860pF @ 10V
Current - Continuous Drain (Id) @ 25°C
5.3A Ta
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±12V
Drain Current-Max (Abs) (ID)
5.3A
Drain-source On Resistance-Max
0.06Ohm
DS Breakdown Voltage-Min
20V
RoHS Status
Non-RoHS Compliant

Description

IRF7204 Description
International Rectifier's Fourth Generation HEXFETs use innovative processing techniques to provide the lowest on-resistance per silicon area feasible. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer a highly efficient device that can be used in a wide range of applications.

IRF7204 Features
Adavanced Process Technology
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching

IRF7204 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF7204 More Descriptions

Trans MOSFET P-CH 20V 5.3A 8-Pin SOIC
-20V Single P-Channel HEXFET Power MOSFET in a SO-8 package
French Electronic Distributor since 1988

Product Comparison

The three parts on the right have similar specifications to IRF7204.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Mount

Number of Pins

Supplier Device Package

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Radiation Hardening

Lead Free

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Factory Lead Time

Element Configuration

Output Current

Turn On Delay Time

Threshold Voltage

Dual Supply Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

View Compare
IRF7204

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1997

e0

Obsolete

1 (Unlimited)

8

EAR99

Tin/Lead (Sn/Pb)

LOGIC LEVEL COMPATIBLE

8541.29.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

245

30

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

P-Channel

SWITCHING

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

4.5V 10V

±12V

5.3A

0.06Ohm

20V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF7233PBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

-

-55°C~150°C TJ

Tube

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

2.5W Ta

-

P-Channel

-

20mOhm @ 9.5A, 4.5V

600mV @ 250μA

6000pF @ 10V

9.5A Ta

74nC @ 5V

12V

2.5V 4.5V

±12V

-

-

-

RoHS Compliant

Surface Mount

8

8-SO

20MOhm

150°C

-55°C

-12V

-9.5A

2.5W

540ns

370 ns

77 ns

-9.5A

12V

-12V

6nF

20mOhm

20 mΩ

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF7204 vs IRF7233PBF
IRF7201TR

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2003

-

Obsolete

1 (Unlimited)

8

EAR99

-

LOGIC LEVEL COMPATIBLE

8541.29.00.95

MOSFET (Metal Oxide)

DUAL

GULL WING

NOT SPECIFIED

NOT SPECIFIED

R-PDSO-G8

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

2.5W Tc

ENHANCEMENT MODE

N-Channel

SWITCHING

30m Ω @ 7.3A, 10V

1V @ 250μA

550pF @ 25V

7.3A Tc

28nC @ 10V

30V

4.5V 10V

±20V

7.3A

0.03Ohm

30V

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

MS-012AA

58A

70 mJ

-

-

-

-

-

-

-

-

-

-

-

-

IRF7204 vs IRF7201TR
IRF7204TRPBF

Infineon Technologies

Surface Mount

8-SOIC (0.154, 3.90mm Width)

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

1997

-

Active

1 (Unlimited)

8

-

-

LOGIC LEVEL COMPATIBLE

-

MOSFET (Metal Oxide)

DUAL

GULL WING

-

-

-

-

1

-

2.5W Tc

ENHANCEMENT MODE

P-Channel

SWITCHING

60m Ω @ 5.3A, 10V

2.5V @ 250μA

860pF @ 10V

5.3A Ta

25nC @ 10V

20V

4.5V 10V

±12V

-

-

-

ROHS3 Compliant

Surface Mount

8

-

60mOhm

-

-

-20V

-5.3A

2.5W

26ns

68 ns

100 ns

-5.3A

12V

-20V

-

-

-

No

Contains Lead, Lead Free

-

-

-

12 Weeks

Single

5.3A

14 ns

-2.5V

-20V

100 ns

-2.5 V

1.4986mm

4.9784mm

3.9878mm

No SVHC

IRF7204 vs IRF7204TRPBF