Vishay Siliconix IRF710PBF
- Part Number:
- IRF710PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478727-IRF710PBF
- Description:
- MOSFET N-CH 400V 2A TO-220AB
- Datasheet:
- IRF710PBF
Vishay Siliconix IRF710PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF710PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2008
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance3.6Ohm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max36W Tc
- Element ConfigurationSingle
- Power Dissipation36W
- Turn On Delay Time8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs3.6Ohm @ 1.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds170pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time9.9ns
- Drain to Source Voltage (Vdss)400V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time21 ns
- Continuous Drain Current (ID)2A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage400V
- Input Capacitance170pF
- Recovery Time540 ns
- Drain to Source Resistance3.6Ohm
- Rds On Max3.6 Ω
- Nominal Vgs2 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF710PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 170pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2A.With a drain-source breakdown voltage of 400V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 400V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 3.6Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF710PBF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF710PBF Applications
There are a lot of Vishay Siliconix
IRF710PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 170pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2A.With a drain-source breakdown voltage of 400V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 400V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 3.6Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF710PBF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)
IRF710PBF Applications
There are a lot of Vishay Siliconix
IRF710PBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF710PBF More Descriptions
Single N-Channel 400 V 3.6 Ohms Flange Mount Power Mosfet - TO-220AB
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 400V, 2A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 400V, 2A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis
The three parts on the right have similar specifications to IRF710PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Max Power DissipationPbfree CodeJEDEC-95 CodeRadiation HardeningView Compare
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IRF710PBF8 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~150°C TJTube2008Active1 (Unlimited)3.6Ohm150°C-55°CMOSFET (Metal Oxide)1136W TcSingle36W8 nsN-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V9.9ns400V10V±20V11 ns21 ns2A4V20V400V170pF540 ns3.6Ohm3.6 Ω2 V9.01mm10.41mm4.7mmUnknownROHS3 CompliantLead Free-----------------------
-
-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~150°C TJTape & Reel (TR)2017Obsolete1 (Unlimited)---MOSFET (Metal Oxide)1-3.1W Ta 50W Tc---N-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V-400V10V±20V--3.3A------------Non-RoHS Compliant-SILICON2FET General Purpose PowerSINGLEGULL WING225unknownNOT SPECIFIED3R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING13A400V190 mJ----
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-I2PAK--55°C~150°C TJTube2016Obsolete1 (Unlimited)---MOSFET (Metal Oxide)------N-Channel3.6Ohm @ 1.2A, 10V4V @ 250μA170pF @ 25V2A Tc17nC @ 10V-400V10V±20V--2A---170pF--3.6 Ω-----Non-RoHS Compliant-------------------3.1W---
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12 WeeksThrough HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA3-6.000006g-55°C~150°C TJTube2017Active1 (Unlimited)---MOSFET (Metal Oxide)113.1W Ta 50W TcSingle-10 nsN-Channel1.8 Ω @ 2A, 10V4V @ 250μA410pF @ 25V3.3A Tc20nC @ 10V14ns400V10V±20V13 ns30 ns3.3A-20V------9.01mm10.41mm4.7mm-ROHS3 Compliant-SILICON3----------ENHANCEMENT MODEDRAINSWITCHING-400V--yesTO-220ABNo
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