IRF710PBF

Vishay Siliconix IRF710PBF

Part Number:
IRF710PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478727-IRF710PBF
Description:
MOSFET N-CH 400V 2A TO-220AB
ECAD Model:
Datasheet:
IRF710PBF

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Specifications
Vishay Siliconix IRF710PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF710PBF.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    3.6Ohm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    36W Tc
  • Element Configuration
    Single
  • Power Dissipation
    36W
  • Turn On Delay Time
    8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    3.6Ohm @ 1.2A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    170pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    9.9ns
  • Drain to Source Voltage (Vdss)
    400V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    21 ns
  • Continuous Drain Current (ID)
    2A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    400V
  • Input Capacitance
    170pF
  • Recovery Time
    540 ns
  • Drain to Source Resistance
    3.6Ohm
  • Rds On Max
    3.6 Ω
  • Nominal Vgs
    2 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF710PBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 170pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2A.With a drain-source breakdown voltage of 400V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 400V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 21 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 3.6Ohm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 400V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF710PBF Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 21 ns
single MOSFETs transistor is 3.6Ohm
a threshold voltage of 4V
a 400V drain to source voltage (Vdss)


IRF710PBF Applications
There are a lot of Vishay Siliconix
IRF710PBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF710PBF More Descriptions
Single N-Channel 400 V 3.6 Ohms Flange Mount Power Mosfet - TO-220AB
Transistor: N-MOSFET; unipolar; 400V; 1.2A; 36W; TO220AB
Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 400V, 2A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dis
Product Comparison
The three parts on the right have similar specifications to IRF710PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Max Power Dissipation
    Pbfree Code
    JEDEC-95 Code
    Radiation Hardening
    View Compare
  • IRF710PBF
    IRF710PBF
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~150°C TJ
    Tube
    2008
    Active
    1 (Unlimited)
    3.6Ohm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    36W Tc
    Single
    36W
    8 ns
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    9.9ns
    400V
    10V
    ±20V
    11 ns
    21 ns
    2A
    4V
    20V
    400V
    170pF
    540 ns
    3.6Ohm
    3.6 Ω
    2 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF720STRL
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2017
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    3.1W Ta 50W Tc
    -
    -
    -
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    3.3A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    SILICON
    2
    FET General Purpose Power
    SINGLE
    GULL WING
    225
    unknown
    NOT SPECIFIED
    3
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    13A
    400V
    190 mJ
    -
    -
    -
    -
  • IRF710L
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    I2PAK
    -
    -55°C~150°C TJ
    Tube
    2016
    Obsolete
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    N-Channel
    3.6Ohm @ 1.2A, 10V
    4V @ 250μA
    170pF @ 25V
    2A Tc
    17nC @ 10V
    -
    400V
    10V
    ±20V
    -
    -
    2A
    -
    -
    -
    170pF
    -
    -
    3.6 Ω
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    3.1W
    -
    -
    -
  • IRF720LPBF
    12 Weeks
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    3
    -
    6.000006g
    -55°C~150°C TJ
    Tube
    2017
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    1
    1
    3.1W Ta 50W Tc
    Single
    -
    10 ns
    N-Channel
    1.8 Ω @ 2A, 10V
    4V @ 250μA
    410pF @ 25V
    3.3A Tc
    20nC @ 10V
    14ns
    400V
    10V
    ±20V
    13 ns
    30 ns
    3.3A
    -
    20V
    -
    -
    -
    -
    -
    -
    9.01mm
    10.41mm
    4.7mm
    -
    ROHS3 Compliant
    -
    SILICON
    3
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    400V
    -
    -
    yes
    TO-220AB
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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