Infineon Technologies IRF6795MTRPBF

Name: IRF6795MTRPBF
Brand: Infineon Technologies
SKU: 2482830-IRF6795MTRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF6795MTRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2482830-IRF6795MTRPBF

Description:: MOSFET N-CH 25V 32A DIRECTFET-MX

ECAD Model:

Datasheet:: IRF6795MTRPBF

Specifications

Infineon Technologies IRF6795MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6795MTRPBF.

Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric MX
Number of Pins
7
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2010
JESD-609 Code
e1
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
JESD-30 Code
R-XBCC-N3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.8W Ta 75W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
75W
Case Connection
DRAIN
Turn On Delay Time
16 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.8m Ω @ 32A, 10V
Vgs(th) (Max) @ Id
2.35V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds
4280pF @ 13V
Current - Continuous Drain (Id) @ 25°C
32A Ta 160A Tc
Gate Charge (Qg) (Max) @ Vgs
53nC @ 4.5V
Rise Time
27ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
32A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
25V
Pulsed Drain Current-Max (IDM)
250A
Height
506μm
Length
6.35mm
Width
5.05mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF6795MTRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4280pF @ 13V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 32A amps.In this device, the drain-source breakdown voltage is 25V and VGS=25V, so the drain-source breakdown voltage is 25V in this case.It is [16 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 250A.A turn-on delay time of 16 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

IRF6795MTRPBF Features
a continuous drain current (ID) of 32A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 16 ns
based on its rated peak drain current 250A.

IRF6795MTRPBF Applications
There are a lot of Infineon Technologies
IRF6795MTRPBF applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IRF6795MTRPBF More Descriptions

Single N-Channel 25 V 32 mOhm 53 nC HEXFET® Power Mosfet - DirectFET®
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N CH/SCHOTTKY, 25V, DIRECTFET MX; Transistor Polarity: N Channel Schottky; Continuous Drain Current Id: 160A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0014ohm; R; Available until stocks are exhausted

Product Comparison

The three parts on the right have similar specifications to IRF6795MTRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Additional Feature

HTS Code

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Input Capacitance

Rds On Max

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF6795MTRPBF

Infineon Technologies

12 Weeks

Surface Mount

Surface Mount

DirectFET™ Isometric MX

7

SILICON

-40°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2010

e1

Active

1 (Unlimited)

3

EAR99

Tin/Silver/Copper (Sn/Ag/Cu)

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

R-XBCC-N3

1

SINGLE WITH BUILT-IN DIODE

2.8W Ta 75W Tc

ENHANCEMENT MODE

75W

DRAIN

16 ns

N-Channel

SWITCHING

1.8m Ω @ 32A, 10V

2.35V @ 100μA

4280pF @ 13V

32A Ta 160A Tc

53nC @ 4.5V

27ns

4.5V 10V

±20V

11 ns

16 ns

32A

20V

25V

250A

506μm

6.35mm

5.05mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tube

HEXFET®

1998

e0

Obsolete

1 (Unlimited)

2

EAR99

Tin/Lead (Sn/Pb)

-

MOSFET (Metal Oxide)

SINGLE

R-PSSO-G2

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 110W Tc

ENHANCEMENT MODE

-

DRAIN

-

P-Channel

SWITCHING

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

10V

±20V

-

-

-

-

-

44A

-

-

-

-

Non-RoHS Compliant

-

YES

AVALANCHE RATED, HIGH RELIABILITY

8541.29.00.95

GULL WING

225

30

Not Qualified

150V

13A

0.29Ohm

150V

310 mJ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6795MTRPBF vs IRF6215S
IRF634STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

3.1W Ta 74W Tc

-

-

-

-

N-Channel

-

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

-

10V

±20V

-

-

8.1A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

250V

-

-

-

-

D2PAK

770pF

450 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6795MTRPBF vs IRF634STRR
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF6795MTRPBF vs IRF634

Certification

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IRF6795MTRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T RoHS: Compliant	8278	1 $1.9104 10 $1.8358 25 $1.6616 100 $1.3931 250 $1.2538 500 $1.1284 1000 $1.1088 3000 $1.0673 6000 $1.0431
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 25V 32A DIRECTFET-MX RoHS: Compliant	4800	4800 $0.88088
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 25V 32A DIRECTFET-MX RoHS: Compliant	4800	1 $2.16 10 $1.954 100 $1.5703 500 $1.22138 1000 $1.012
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 25V 32A DIRECTFET-MX RoHS: Compliant	4800	1 $2.16 10 $1.954 100 $1.5703 500 $1.22138 1000 $1.012
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T RoHS: Compliant	8278	9 $1.9104 10 $1.8358 25 $1.6616 100 $1.3931 250 $1.2538 500 $1.1284 1000 $1.1088 3000 $1.0673 6000 $1.0431
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T RoHS: Compliant	4800	4800 $0.8582
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 25V 32A 7-Pin Direct-FET MX T/R RoHS: Compliant	0	4800 $0.8869 9600 $0.8549 19200 $0.8239 28800 $0.7959 48000 $0.7819
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 25V 32A 7-Pin Direct-FET MX T/R RoHS: Compliant	0	4800 $0.81043 9600 $0.77712 14400 $0.76662 24000 $0.73675 48000 $0.72731 120000 $0.70912 240000 $0.69183
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 25V 32A 7-Pin Direct-FET MX T/R RoHS: Compliant	0	4800 $1.0079 9600 $0.8399 19200 $0.7749 28800 $0.7199 48000 $0.6719
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH/SCHOTTKY, 25V, DIRECTFET MX, Transis	2420	1 $1.82 10 $1.54 25 $1.44 50 $1.34 100 $1.24 250 $1.16 500 $1.08 1000 $0.894
IRF6795MTRPBF DISTI #	Infineon Technologies AG	A 25V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DI RoHS: Compliant	0	4800 $1.208 9600 $1.184 24000 $1.148
IRF6795MTRPBF DISTI #	International Rectifier	RoHS: Not Compliant	4800	1 $1 25 $0.93 100 $0.89 500 $0.86 1000 $0.82
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC RoHS: Compliant	4776	1 $1.82 10 $1.54 100 $1.24 500 $1.08 1000 $0.894 2500 $0.832
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T RoHS: Compliant	8278	10 $1.8358 25 $1.6616 100 $1.3931 250 $1.2538
IRF6795MTRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 32A 7-Pin Direct-FET MX T RoHS: Compliant	4800	4800 $0.939
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH/SCHOTTKY, 25V, DIRECTFET MX RoHS: Compliant	2420	5 $1.29 25 $1.18 100 $0.944 250 $0.885 500 $0.825
IRF6795MTRPBF DISTI #	Infineon Technologies AG	RoHS: Compliant	9600	4800 $0.92
IRF6795MTRPBF DISTI #	INFINEON/IR	DirectFET MX RoHS: Compliant	4800	4800 $0.94
IRF6795MTRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH/SCHOTTKY, 25V, DIRECTFET MX RoHS: Compliant	2420	1 $3.43 10 $3.1 100 $2.49 500 $1.94 1000 $1.61

IRF6795~~(4)~~
IRF679~~(12)~~
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IRF6~~(67)~~
IRF~~(69)~~

Infineon Technologies IRF6795MTRPBF

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