Infineon Technologies IRF6715MTRPBF
- Part Number:
- IRF6715MTRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2849329-IRF6715MTRPBF
- Description:
- MOSFET N-CH 25V 34A DIRECTFET
- Datasheet:
- IRF6715MTRPBF
Infineon Technologies IRF6715MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6715MTRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDirectFET™ Isometric MX
- Number of Pins7
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2011
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- JESD-30 CodeR-XBCC-N3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.8W Ta 78W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.8W
- Case ConnectionDRAIN
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.6m Ω @ 34A, 10V
- Vgs(th) (Max) @ Id2.4V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds5340pF @ 13V
- Current - Continuous Drain (Id) @ 25°C34A Ta 180A Tc
- Gate Charge (Qg) (Max) @ Vgs59nC @ 4.5V
- Rise Time31ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)34A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- Avalanche Energy Rating (Eas)200 mJ
- Height506μm
- Length6.35mm
- Width5.05mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
IRF6715MTRPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5340pF @ 13V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 34A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 16 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF6715MTRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 16 ns
IRF6715MTRPBF Applications
There are a lot of Infineon Technologies
IRF6715MTRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5340pF @ 13V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 34A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 16 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
IRF6715MTRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 16 ns
IRF6715MTRPBF Applications
There are a lot of Infineon Technologies
IRF6715MTRPBF applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF6715MTRPBF More Descriptions
Trans MOSFET N-CH 25V 34A 7-Pin Direct-FET MX T/R
MOSFET, N CH, 25V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.001; Available until stocks are exhausted Alternative available
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:34A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0013ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
MOSFET, N CH, 25V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.001; Available until stocks are exhausted Alternative available
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:34A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0013ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF6715MTRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthRadiation HardeningRoHS StatusSupplier Device PackageDrain to Source Voltage (Vdss)WeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsElement ConfigurationInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF6715MTRPBF12 WeeksSurface MountSurface MountDirectFET™ Isometric MX7SILICON-40°C~150°C TJTape & Reel (TR)HEXFET®2011e1Active1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMR-XBCC-N31SINGLE WITH BUILT-IN DIODE2.8W Ta 78W TcENHANCEMENT MODE2.8WDRAIN20 nsN-ChannelSWITCHING1.6m Ω @ 34A, 10V2.4V @ 100μA5340pF @ 13V34A Ta 180A Tc59nC @ 4.5V31ns4.5V 10V±20V12 ns16 ns34A20V25V200 mJ506μm6.35mm5.05mmNoROHS3 Compliant-----------
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2004-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----82W Tc----N-Channel-300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V-10V±20V----------Non-RoHS CompliantTO-262200V--------
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-Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTube-2009-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----3.8W Ta 88W Tc---8.4 nsN-Channel-435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns10V±20V15 ns28 ns8A20V--9.65mm10.67mm4.83mm-ROHS3 CompliantI2PAK250V2.387001g175°C-55°C1Single620pF435mOhm435 mΩ
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-Surface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3--55°C~175°C TJTube-2009-Obsolete1 (Unlimited)----MOSFET (Metal Oxide)----3.8W Ta 88W Tc---8.4 nsN-Channel-435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V16ns10V±20V15 ns28 ns8A20V--4.83mm10.67mm9.65mm-ROHS3 CompliantD2PAK250V1.437803g175°C-55°C1Single620pF435mOhm435 mΩ
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