IRF6715MTRPBF

Infineon Technologies IRF6715MTRPBF

Part Number:
IRF6715MTRPBF
Manufacturer:
Infineon Technologies
Ventron No:
2849329-IRF6715MTRPBF
Description:
MOSFET N-CH 25V 34A DIRECTFET
ECAD Model:
Datasheet:
IRF6715MTRPBF

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Specifications
Infineon Technologies IRF6715MTRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6715MTRPBF.
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    DirectFET™ Isometric MX
  • Number of Pins
    7
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -40°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2011
  • JESD-609 Code
    e1
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • JESD-30 Code
    R-XBCC-N3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    2.8W Ta 78W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.8W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.6m Ω @ 34A, 10V
  • Vgs(th) (Max) @ Id
    2.4V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    5340pF @ 13V
  • Current - Continuous Drain (Id) @ 25°C
    34A Ta 180A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    59nC @ 4.5V
  • Rise Time
    31ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    34A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    25V
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Height
    506μm
  • Length
    6.35mm
  • Width
    5.05mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
IRF6715MTRPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 200 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 5340pF @ 13V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 34A.With a drain-source breakdown voltage of 25V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 25V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 16 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

IRF6715MTRPBF Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 34A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 16 ns


IRF6715MTRPBF Applications
There are a lot of Infineon Technologies
IRF6715MTRPBF applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
IRF6715MTRPBF More Descriptions
Trans MOSFET N-CH 25V 34A 7-Pin Direct-FET MX T/R
MOSFET, N CH, 25V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 34A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.001; Available until stocks are exhausted Alternative available
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 34 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:34A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0013ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to IRF6715MTRPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    JESD-30 Code
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Supplier Device Package
    Drain to Source Voltage (Vdss)
    Weight
    Max Operating Temperature
    Min Operating Temperature
    Number of Channels
    Element Configuration
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRF6715MTRPBF
    IRF6715MTRPBF
    12 Weeks
    Surface Mount
    Surface Mount
    DirectFET™ Isometric MX
    7
    SILICON
    -40°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2011
    e1
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    BOTTOM
    R-XBCC-N3
    1
    SINGLE WITH BUILT-IN DIODE
    2.8W Ta 78W Tc
    ENHANCEMENT MODE
    2.8W
    DRAIN
    20 ns
    N-Channel
    SWITCHING
    1.6m Ω @ 34A, 10V
    2.4V @ 100μA
    5340pF @ 13V
    34A Ta 180A Tc
    59nC @ 4.5V
    31ns
    4.5V 10V
    ±20V
    12 ns
    16 ns
    34A
    20V
    25V
    200 mJ
    506μm
    6.35mm
    5.05mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF630NL
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    82W Tc
    -
    -
    -
    -
    N-Channel
    -
    300mOhm @ 5.4A, 10V
    4V @ 250μA
    575pF @ 25V
    9.3A Tc
    35nC @ 10V
    -
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    TO-262
    200V
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF634NLPBF
    -
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    -
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.8W Ta 88W Tc
    -
    -
    -
    8.4 ns
    N-Channel
    -
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    10V
    ±20V
    15 ns
    28 ns
    8A
    20V
    -
    -
    9.65mm
    10.67mm
    4.83mm
    -
    ROHS3 Compliant
    I2PAK
    250V
    2.387001g
    175°C
    -55°C
    1
    Single
    620pF
    435mOhm
    435 mΩ
  • IRF634NSPBF
    -
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -55°C~175°C TJ
    Tube
    -
    2009
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.8W Ta 88W Tc
    -
    -
    -
    8.4 ns
    N-Channel
    -
    435mOhm @ 4.8A, 10V
    4V @ 250μA
    620pF @ 25V
    8A Tc
    34nC @ 10V
    16ns
    10V
    ±20V
    15 ns
    28 ns
    8A
    20V
    -
    -
    4.83mm
    10.67mm
    9.65mm
    -
    ROHS3 Compliant
    D2PAK
    250V
    1.437803g
    175°C
    -55°C
    1
    Single
    620pF
    435mOhm
    435 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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