Infineon Technologies IRF6712STRPBF
- Part Number:
- IRF6712STRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2482846-IRF6712STRPBF
- Description:
- MOSFET N-CH 25V 17A DIRECTFET
- ECAD Model:
-
- Datasheet:
- IRF6712STRPBF
Infineon Technologies IRF6712STRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6712STRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseDirectFET™ Isometric SQ
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2009
- JESD-609 Codee1
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance4.9MOhm
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- JESD-30 CodeR-XBCC-N2
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2.2W Ta 36W Tc
- Operating ModeENHANCEMENT MODE
- Power Dissipation36W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.9m Ω @ 17A, 10V
- Vgs(th) (Max) @ Id2.4V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds1570pF @ 13V
- Current - Continuous Drain (Id) @ 25°C17A Ta 68A Tc
- Gate Charge (Qg) (Max) @ Vgs18nC @ 4.5V
- Rise Time40ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time14 ns
- Continuous Drain Current (ID)17A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage25V
- Height506μm
- Length4.826mm
- Width3.95mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF6712STRPBF Description
IRF6712STRPBF is a kind of HEXFET? power MOSFET developed by Infineon Technologies. The lowest on-state resistance in a package can be realized based on the advanced DirectFET? packaging that can also make dual-sided cooling possible to maximize thermal transfer in power systems. It is able to provide low resistance, low charge, as well as low conduction and switching losses.
IRF6712STRPBF Features
Low conduction and switching losses
Ultra-low package inductance
Dual-sided cooling compatible
Advanced DirectFET? packaging
Low on-state resistance
IRF6712STRPBF Applications
Sync.FET and some Control FET application
High-efficiency DC-DC converters
IRF6712STRPBF is a kind of HEXFET? power MOSFET developed by Infineon Technologies. The lowest on-state resistance in a package can be realized based on the advanced DirectFET? packaging that can also make dual-sided cooling possible to maximize thermal transfer in power systems. It is able to provide low resistance, low charge, as well as low conduction and switching losses.
IRF6712STRPBF Features
Low conduction and switching losses
Ultra-low package inductance
Dual-sided cooling compatible
Advanced DirectFET? packaging
Low on-state resistance
IRF6712STRPBF Applications
Sync.FET and some Control FET application
High-efficiency DC-DC converters
IRF6712STRPBF More Descriptions
Single N-Channel 25 V 4.9 mOhm 18 nC HEXFET® Power Mosfet - DirectFET®
Trans MOSFET N-CH Si 25V 17A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 25V 17A DIRECTFET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 25V, 17A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET
Trans MOSFET N-CH Si 25V 17A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 25V 17A DIRECTFET
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 17 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 25V, 17A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET
The three parts on the right have similar specifications to IRF6712STRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionJESD-30 CodeNumber of ElementsConfigurationPower Dissipation-MaxOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountAdditional FeatureTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Vgs(th) (Max) @ Id:Technology:Supplier Device Package:Series:Rds On (Max) @ Id, Vgs:Power Dissipation (Max):Packaging:Package / Case:Operating Temperature:Mounting Type:Input Capacitance (Ciss) (Max) @ Vds:Gate Charge (Qg) (Max) @ Vgs:FET Type:FET Feature:Drain to Source Voltage (Vdss):Current - Continuous Drain (Id) @ 25°C:View Compare
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IRF6712STRPBF12 WeeksSurface MountSurface MountDirectFET™ Isometric SQ6SILICON-40°C~150°C TJTape & Reel (TR)HEXFET®2009e1Active1 (Unlimited)2EAR994.9MOhmTin/Silver/Copper (Sn/Ag/Cu)FET General Purpose PowerMOSFET (Metal Oxide)BOTTOMR-XBCC-N21SINGLE WITH BUILT-IN DIODE2.2W Ta 36W TcENHANCEMENT MODE36WDRAIN11 nsN-ChannelSWITCHING4.9m Ω @ 17A, 10V2.4V @ 50μA1570pF @ 13V17A Ta 68A Tc18nC @ 4.5V40ns4.5V 10V±20V12 ns14 ns17A20V25V506μm4.826mm3.95mmNoROHS3 CompliantLead Free----------------------------- -
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTape & Reel (TR)HEXFET®1998e3Obsolete1 (Unlimited)2EAR99-Matte Tin (Sn) - with Nickel (Ni) barrierOther TransistorsMOSFET (Metal Oxide)SINGLER-PSSO-G21SINGLE WITH BUILT-IN DIODE3.8W Ta 110W TcENHANCEMENT MODE-DRAIN-P-ChannelSWITCHING290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-10V±20V---------Non-RoHS Compliant-YESAVALANCHE RATED, HIGH RELIABILITYGULL WING26030Not Qualified150V13A0.29Ohm44A150V310 mJ----------------
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---TubeHEXFET®1998-Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)----3.8W Ta 110W Tc----P-Channel-290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V-10V±20V---------Non-RoHS Compliant-------150V---------------------
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-------------------------------------------------------------4V @ 250µAMOSFET (Metal Oxide)TO-220AB-450 mOhm @ 5.1A, 10V74W (Tc)TubeTO-220-3-55°C ~ 150°C (TJ)Through Hole770pF @ 25V41nC @ 10VN-Channel-250V8.1A (Tc)
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