Infineon Technologies IRF6710S2TRPBF

Name: IRF6710S2TRPBF
Brand: Infineon Technologies
SKU: 2851830-IRF6710S2TRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF6710S2TRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2851830-IRF6710S2TRPBF

Description:: MOSFET N-CH 25V 12A DIRECTFET

ECAD Model:

Datasheet:: IRF6710S2TRPBF

Specifications

Infineon Technologies IRF6710S2TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6710S2TRPBF.

Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Number of Pins
6
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2008
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
BOTTOM
JESD-30 Code
R-XBCC-N2
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.8W Ta 15W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
15W
Case Connection
DRAIN
Turn On Delay Time
7.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.9m Ω @ 12A, 10V
Vgs(th) (Max) @ Id
2.4V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds
1190pF @ 13V
Current - Continuous Drain (Id) @ 25°C
12A Ta 37A Tc
Gate Charge (Qg) (Max) @ Vgs
13nC @ 4.5V
Rise Time
20ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
5.2 ns
Continuous Drain Current (ID)
12mA
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0059Ohm
Drain to Source Breakdown Voltage
25V
Avalanche Energy Rating (Eas)
24 mJ
Height
558.8μm
Length
4.826mm
Width
3.95mm
Radiation Hardening
No
RoHS Status
RoHS Compliant

Description

IRF6710S2TRPBF Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 24 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1190pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 5.2 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

IRF6710S2TRPBF Features
the avalanche energy rating (Eas) is 24 mJ
a continuous drain current (ID) of 12mA
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 5.2 ns

IRF6710S2TRPBF Applications
There are a lot of Infineon Technologies
IRF6710S2TRPBF applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

IRF6710S2TRPBF More Descriptions

Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:12mA; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0045ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET

Product Comparison

The three parts on the right have similar specifications to IRF6710S2TRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Drain to Source Voltage (Vdss)

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Input Capacitance

Drain to Source Resistance

Rds On Max

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF6710S2TRPBF

Infineon Technologies

15 Weeks

Surface Mount

Surface Mount

DirectFET™ Isometric S1

6

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2008

Obsolete

1 (Unlimited)

2

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

BOTTOM

R-XBCC-N2

1

SINGLE WITH BUILT-IN DIODE

1.8W Ta 15W Tc

ENHANCEMENT MODE

15W

DRAIN

7.9 ns

N-Channel

SWITCHING

5.9m Ω @ 12A, 10V

2.4V @ 25μA

1190pF @ 13V

12A Ta 37A Tc

13nC @ 4.5V

20ns

4.5V 10V

±20V

6 ns

5.2 ns

12mA

20V

0.0059Ohm

25V

24 mJ

558.8μm

4.826mm

3.95mm

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215L-103

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-

Tube

HEXFET®

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

3.8W Ta 110W Tc

-

-

-

-

P-Channel

-

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

150V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6710S2TRPBF vs IRF6215L-103
IRF634NSPBF

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

-

2009

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

3.8W Ta 88W Tc

-

-

-

8.4 ns

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

16ns

10V

±20V

15 ns

28 ns

8A

20V

-

-

-

4.83mm

10.67mm

9.65mm

-

ROHS3 Compliant

250V

D2PAK

1.437803g

175°C

-55°C

1

Single

620pF

435mOhm

435 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF6710S2TRPBF vs IRF634NSPBF
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF6710S2TRPBF vs IRF634

Certification

Related parts for IRF6710S2TRPBF

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Infineon Technologies

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IRF6710~~(3)~~
IRF671~~(31)~~
IRF67~~(70)~~
IRF6~~(67)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T RoHS: Compliant	2322	1 $1.6155 10 $1.4597 25 $1.4123 50 $1.2511 100 $1.1822 250 $1.0863 500 $0.9932 1000 $0.9898 3000 $0.8909 6000 $0.8018 15000 $0.7947 30000 $0.7879 75000 $0.781
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET RoHS: Compliant	0
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 25V 12A 6-Pin Direct-FET S1 T RoHS: Compliant	2322	8 $1.6133 10 $1.4562 25 $1.4096 50 $1.2483 100 $1.1813 250 $1.1499 500 $0.9983 1000 $0.8985
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 25V 12A 6-Pin Direct-FET S1 T/R RoHS: Compliant	0
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	MOSFET, 25V, 12.000A, DIRECTFET RoHS: Compliant	0	4800 $0.931 9600 $0.912 24000 $0.884
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC RoHS: Compliant	164	1 $1.94 10 $1.65 100 $1.32 500 $1.15 1000 $0.957 2500 $0.888 4800 $0.855 9600 $0.79
IRF6710S2TRPBF DISTI #IRF6710S2TRPBF	Infineon Technologies AG	MOSFETs RoHS: Compliant	2322	10 $1.4701 25 $1.4241 50 $1.2509 100 $1.1842

Infineon Technologies IRF6710S2TRPBF

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