Infineon Technologies IRF6608TR1
- Part Number:
- IRF6608TR1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071661-IRF6608TR1
- Description:
- MOSFET N-CH 30V 13A DIRECTFET
- ECAD Model:
-
- Datasheet:
- IRF6608
Infineon Technologies IRF6608TR1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF6608TR1.
- Mounting TypeSurface Mount
- Package / CaseDirectFET™ Isometric ST
- Operating Temperature-40°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)3 (168 Hours)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2.1W Ta 42W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs9m Ω @ 13A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2120pF @ 15V
- Current - Continuous Drain (Id) @ 25°C13A Ta 55A Tc
- Gate Charge (Qg) (Max) @ Vgs24nC @ 4.5V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±12V
- RoHS StatusNon-RoHS Compliant
IRF6608TR1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2120pF @ 15V is its maximum input capacitance.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6608TR1 Features
a 30V drain to source voltage (Vdss)
IRF6608TR1 Applications
There are a lot of Infineon Technologies
IRF6608TR1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2120pF @ 15V is its maximum input capacitance.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IRF6608TR1 Features
a 30V drain to source voltage (Vdss)
IRF6608TR1 Applications
There are a lot of Infineon Technologies
IRF6608TR1 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF6608TR1 More Descriptions
Trans MOSFET N-CH 30V 13A 7-Pin Direct-FET ST T/R
MOSFET, N, DIRECTFET, ST; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 12V; Power Dissi
MOSFET, N DIRECTFET STMOSFET, N DIRECTFET ST; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:ST; Current, Id cont:55A; Current, Idm pulse:100A; Power, Pd:2.1W; Resistance, Rds on:9mR; SMD:1; RoHS Compliant: Yes
MOSFET, N, DIRECTFET, ST; Transistor Polarity: N Channel; Continuous Drain Current Id: 55A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.007ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 12V; Power Dissi
MOSFET, N DIRECTFET STMOSFET, N DIRECTFET ST; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:ST; Current, Id cont:55A; Current, Idm pulse:100A; Power, Pd:2.1W; Resistance, Rds on:9mR; SMD:1; RoHS Compliant: Yes
The three parts on the right have similar specifications to IRF6608TR1.
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ImagePart NumberManufacturerMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusSupplier Device PackageMountNumber of PinsContinuous Drain Current (ID)Input CapacitanceRds On MaxWeightMax Operating TemperatureMin Operating TemperatureNumber of ChannelsElement ConfigurationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source ResistanceHeightLengthWidthView Compare
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IRF6608TR1Surface MountDirectFET™ Isometric ST-40°C~150°C TJTape & Reel (TR)HEXFET®2004Obsolete3 (168 Hours)MOSFET (Metal Oxide)2.1W Ta 42W TcN-Channel9m Ω @ 13A, 10V3V @ 250μA2120pF @ 15V13A Ta 55A Tc24nC @ 4.5V30V4.5V 10V±12VNon-RoHS Compliant--------------------- -
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®2004Obsolete1 (Unlimited)MOSFET (Metal Oxide)82W TcN-Channel300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V200V10V±20VNon-RoHS CompliantTO-262-------------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~150°C TJTube-2016Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 130W TcN-Channel180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V200V10V±20VNon-RoHS CompliantI2PAKThrough Hole318A1.3nF180 mΩ--------------
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTube-2009Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 88W TcN-Channel435mOhm @ 4.8A, 10V4V @ 250μA620pF @ 25V8A Tc34nC @ 10V250V10V±20VROHS3 CompliantI2PAKThrough Hole-8A620pF435 mΩ2.387001g175°C-55°C1Single8.4 ns16ns15 ns28 ns20V435mOhm9.65mm10.67mm4.83mm
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