Vishay Siliconix IRF644STRRPBF

Name: IRF644STRRPBF
Brand: Vishay Siliconix
SKU: 3070802-IRF644STRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF644STRRPBF

Manufacturer:: Vishay Siliconix

Ventron No:: 3070802-IRF644STRRPBF

Description:: MOSFET N-CH 250V 14A D2PAK

ECAD Model:

Datasheet:: IRF644STRRPBF

Specifications

Vishay Siliconix IRF644STRRPBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF644STRRPBF.

Factory Lead Time
8 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Supplier Device Package
D2PAK
Weight
1.437803g
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
3.1W Ta 125W Tc
Element Configuration
Single
Power Dissipation
3.1W
Turn On Delay Time
11 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
280mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1300pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
68nC @ 10V
Rise Time
24ns
Drain to Source Voltage (Vdss)
250V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
49 ns
Turn-Off Delay Time
53 ns
Continuous Drain Current (ID)
14A
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.3nF
Drain to Source Resistance
280mOhm
Rds On Max
280 mΩ
Height
4.83mm
Length
10.67mm
Width
9.65mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

IRF644STRRPBF Overview
A device's maximal input capacitance is 1300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 53 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 280mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF644STRRPBF Features
a continuous drain current (ID) of 14A
the turn-off delay time is 53 ns
single MOSFETs transistor is 280mOhm
a 250V drain to source voltage (Vdss)

IRF644STRRPBF Applications
There are a lot of Vishay Siliconix
IRF644STRRPBF applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

IRF644STRRPBF More Descriptions

Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 14A Tc 14A 3.1W 49ns
Trans MOSFET N-CH 250V 14A 3-Pin(2 Tab) D2PAK T/R
Single N-Channel 250 V 3.1 W 68 nC Silicon Surface Mount Mosfet - TO-263-3
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:14A; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:SMD-220 ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF644STRRPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

Radiation Hardening

RoHS Status

Series

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF644STRRPBF

Vishay Siliconix

8 Weeks

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

D2PAK

1.437803g

-55°C~150°C TJ

Tape & Reel (TR)

2013

Active

1 (Unlimited)

150°C

-55°C

MOSFET (Metal Oxide)

1

1

3.1W Ta 125W Tc

Single

3.1W

11 ns

N-Channel

280mOhm @ 8.4A, 10V

4V @ 250μA

1300pF @ 25V

14A Tc

68nC @ 10V

24ns

250V

10V

±20V

49 ns

53 ns

14A

20V

1.3nF

280mOhm

280 mΩ

4.83mm

10.67mm

9.65mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215L-103

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-

-

Tube

1998

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

3.8W Ta 110W Tc

-

-

-

P-Channel

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

150V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF644STRRPBF vs IRF6215L-103
IRF634STRR

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

D2PAK

-

-55°C~150°C TJ

Tape & Reel (TR)

2016

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

3.1W Ta 74W Tc

-

-

-

N-Channel

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

-

250V

10V

±20V

-

-

8.1A

-

770pF

-

450 mΩ

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF644STRRPBF vs IRF634STRR
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF644STRRPBF vs IRF634

Certification

Related parts for IRF644STRRPBF

IRF6215L-103PBF

Infineon Technologies

MOSFET P-CH 150V 13A TO-262
IRF6215S

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
IRF6215STRR

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
IRF6215L-103

Infineon Technologies

MOSFET P-CH 150V 13A TO262
IRF630NL

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-262
IRF640L

Vishay Siliconix

MOSFET N-CH 200V 18A TO-262
IRF634STRR

Vishay Siliconix

MOSFET N-CH 250V 8.1A D2PAK
IRF634NLPBF

Vishay Siliconix

MOSFET N-CH 250V 8A TO-262
IRF634NSPBF

Vishay Siliconix

MOSFET N-CH 250V 8A D2PAK
IRF634

Vishay Siliconix

MOSFET N-CH 250V 8.1A TO-220AB

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IRF644S~~(5)~~
IRF644~~(24)~~
IRF64~~(68)~~
IRF6~~(67)~~
IRF~~(69)~~

Part Number	Manufacturers	Description	Stock	Price
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 14A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	800 $0.6357
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Siliconix	MOSFET N-CH 250V 14A D2PAK RoHS: Compliant	736	1 $4.28 10 $3.821 100 $3.1333
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Siliconix	MOSFET N-CH 250V 14A D2PAK RoHS: Compliant	736	1 $4.28 10 $3.821 100 $3.1333
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Siliconix	MOSFET N-CH 250V 14A D2PAK RoHS: Compliant	0	800 $2.22585
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 14A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	800	800 $0.896
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Intertechnologies	Trans MOSFET N-CH 250V 14A 3-Pin(2 Tab) D2PAK T/R RoHS: Not Compliant	0	800 $1.29 1600 $1.29 3200 $1.19 4800 $1.19 8000 $1.09
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 14 Amp RoHS: Compliant	617	1 $2.83 10 $2.34 100 $1.93 250 $1.87 500 $1.68 800 $1.42 2400 $1.35 4800 $1.3
IRF644STRRPBF DISTI #IRF644STRRPBF	Vishay Intertechnologies	MOSFET N-Chan 250V 14 Amp RoHS: Compliant	0

Vishay Siliconix IRF644STRRPBF

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