Infineon Technologies IRF640NSPBF
- Part Number:
- IRF640NSPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 2484153-IRF640NSPBF
- Description:
- MOSFET N-CH 200V 18A D2PAK
- ECAD Model:
-
- Datasheet:
- IRF640NSPBF
Infineon Technologies IRF640NSPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF640NSPBF.
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Supplier Device PackageD2PAK
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max150W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs150mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1.16pF @ 25V
- Current - Continuous Drain (Id) @ 25°C18A Tc
- Gate Charge (Qg) (Max) @ Vgs67nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IRF640NSPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.16pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF640NSPBF Features
a 200V drain to source voltage (Vdss)
IRF640NSPBF Applications
There are a lot of Rochester Electronics, LLC
IRF640NSPBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.16pF @ 25V is its maximum input capacitance.For this transistor to work, a voltage 200V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IRF640NSPBF Features
a 200V drain to source voltage (Vdss)
IRF640NSPBF Applications
There are a lot of Rochester Electronics, LLC
IRF640NSPBF applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
IRF640NSPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;D2Pak;PD 150W;VGS /-20V;-55
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK
Transistor MOSFET N Channel 200 Volt 18.6 Amp 3 Pin 2 Tab D2pak
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 200V 18A 3-Pin(2 Tab) D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 200V, 18A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:18A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:72A; SMD Marking:IRF640NS; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Single N-Channel 200 V 0.15 Ohm 67 nC HEXFET® Power Mosfet - D2PAK
Transistor MOSFET N Channel 200 Volt 18.6 Amp 3 Pin 2 Tab D2pak
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 200V 18A 3-Pin(2 Tab) D2PAK
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET, N, 200V, 18A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:18A; Junction to Case Thermal Resistance A:1°C/W; Package / Case:D2-PAK; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:72A; SMD Marking:IRF640NS; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
The three parts on the right have similar specifications to IRF640NSPBF.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusPublishedMountNumber of PinsContinuous Drain Current (ID)Input CapacitanceRds On MaxView Compare
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IRF640NSPBFSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263ABD2PAK-55°C~175°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)150W TcN-Channel150mOhm @ 11A, 10V4V @ 250μA1.16pF @ 25V18A Tc67nC @ 10V200V10V±20VROHS3 Compliant------- -
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--TubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.8W Ta 110W TcP-Channel290m Ω @ 6.6A, 10V4V @ 250μA860pF @ 25V13A Tc66nC @ 10V150V10V±20VNon-RoHS Compliant1998-----
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AATO-262-55°C~175°C TJTubeHEXFET®Obsolete1 (Unlimited)MOSFET (Metal Oxide)82W TcN-Channel300mOhm @ 5.4A, 10V4V @ 250μA575pF @ 25V9.3A Tc35nC @ 10V200V10V±20VNon-RoHS Compliant2004-----
-
Through HoleTO-262-3 Long Leads, I2Pak, TO-262AAI2PAK-55°C~150°C TJTube-Obsolete1 (Unlimited)MOSFET (Metal Oxide)3.1W Ta 130W TcN-Channel180mOhm @ 11A, 10V4V @ 250μA1300pF @ 25V18A Tc70nC @ 10V200V10V±20VNon-RoHS Compliant2016Through Hole318A1.3nF180 mΩ
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