Vishay Siliconix IRF630PBF

Name: IRF630PBF
Brand: Vishay Siliconix
SKU: 2478769-IRF630PBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF630PBF

Manufacturer:: Vishay Siliconix

Ventron No:: 2478769-IRF630PBF

Description:: MOSFET N-CH 200V 9A TO-220AB

ECAD Model:

Datasheet:: IRF630PBF

Specifications

Vishay Siliconix IRF630PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF630PBF.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Supplier Device Package
TO-220AB
Weight
6.000006g
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Resistance
400mOhm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Technology
MOSFET (Metal Oxide)
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
74W Tc
Element Configuration
Single
Power Dissipation
74W
Turn On Delay Time
9.4 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
400mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
43nC @ 10V
Rise Time
28ns
Drain to Source Voltage (Vdss)
200V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
39 ns
Continuous Drain Current (ID)
9A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Input Capacitance
800pF
Drain to Source Resistance
400mOhm
Rds On Max
400 mΩ
Height
9.01mm
Length
10.41mm
Width
4.7mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF630PBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 9A amps.In this device, the drain-source breakdown voltage is 200V and VGS=200V, so the drain-source breakdown voltage is 200V in this case.It is [39 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 400mOhm.A turn-on delay time of 9.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.To operate this transistor, you will need a 200V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF630PBF Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 400mOhm
a threshold voltage of 4V
a 200V drain to source voltage (Vdss)

IRF630PBF Applications
There are a lot of Vishay Siliconix
IRF630PBF applications of single MOSFETs transistors.

Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies

IRF630PBF More Descriptions

MOSFET N-CH 200V 9A TO-220AB / Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB
Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - TO-220-3 (TO-220AB)
Transistor: N-MOSFET; unipolar; 200V; 5.7A; 74W; TO220AB
N Channel Mosfet, 200V, 9A; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:9A; On Resistance Rds(On):0.4Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V; No. Of Pins:3Pinsrohs Compliant: No |Vishay IRF630PBF.
Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to IRF630PBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Weight

Operating Temperature

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

Resistance

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Transistor Element Material

Series

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Configuration

Operating Mode

Case Connection

Transistor Application

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

View Compare
IRF630PBF

Vishay Siliconix

8 Weeks

Through Hole

Through Hole

TO-220-3

3

TO-220AB

6.000006g

-55°C~150°C TJ

Tube

2006

Active

1 (Unlimited)

400mOhm

150°C

-55°C

MOSFET (Metal Oxide)

1

1

74W Tc

Single

74W

9.4 ns

N-Channel

400mOhm @ 5.4A, 10V

4V @ 250μA

800pF @ 25V

9A Tc

43nC @ 10V

28ns

200V

10V

±20V

20 ns

39 ns

9A

4V

20V

200V

800pF

400mOhm

400 mΩ

9.01mm

10.41mm

4.7mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF6215S

Infineon Technologies

-

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

-55°C~175°C TJ

Tube

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

1

-

3.8W Ta 110W Tc

-

-

-

P-Channel

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

150V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

SILICON

HEXFET®

e0

2

EAR99

Tin/Lead (Sn/Pb)

AVALANCHE RATED, HIGH RELIABILITY

8541.29.00.95

SINGLE

GULL WING

225

30

R-PSSO-G2

Not Qualified

SINGLE WITH BUILT-IN DIODE

ENHANCEMENT MODE

DRAIN

SWITCHING

13A

0.29Ohm

44A

150V

310 mJ

IRF630PBF vs IRF6215S
IRF6215L-103

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-

-

Tube

1998

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

3.8W Ta 110W Tc

-

-

-

P-Channel

290m Ω @ 6.6A, 10V

4V @ 250μA

860pF @ 25V

13A Tc

66nC @ 10V

-

150V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF630PBF vs IRF6215L-103
IRF630NL

Infineon Technologies

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

TO-262

-

-55°C~175°C TJ

Tube

2004

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

-

82W Tc

-

-

-

N-Channel

300mOhm @ 5.4A, 10V

4V @ 250μA

575pF @ 25V

9.3A Tc

35nC @ 10V

-

200V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

HEXFET®

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF630PBF vs IRF630NL

Certification

Related parts for IRF630PBF

IRF6215L-103PBF

Infineon Technologies

MOSFET P-CH 150V 13A TO-262
IRF6215S

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
IRF6215STRR

Infineon Technologies

MOSFET P-CH 150V 13A D2PAK
IRF6215L-103

Infineon Technologies

MOSFET P-CH 150V 13A TO262
IRF630NL

Infineon Technologies

MOSFET N-CH 200V 9.3A TO-262
IRF640L

Vishay Siliconix

MOSFET N-CH 200V 18A TO-262
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MOSFET N-CH 250V 8.1A D2PAK
IRF634NLPBF

Vishay Siliconix

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Vishay Siliconix

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Vishay Siliconix

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IRF630PBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1508	1 $0.9556 50 $0.8178 100 $0.6616 500 $0.584 1000 $0.4839
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	986	1 $0.9556 50 $0.8178 100 $0.6616 500 $0.584 1000 $0.4839
IRF630PBF DISTI #	Vishay Siliconix	MOSFET N-CH 200V 9A TO-220AB RoHS: Compliant	7815	1 $1.33 50 $1.0678 100 $0.9344 500 $0.7246 1000 $0.57206
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	200000	1000 $0.4845
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1661	35 $0.5184 750 $0.4896
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1508	17 $0.9556 50 $0.8178 100 $0.6616 500 $0.584
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	986	11 $0.9556 50 $0.8178 100 $0.6616 500 $0.584
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	750	1 $0.5989 10 $0.5979 25 $0.5959 50 $0.5249 100 $0.4739 500 $0.4339 1000 $0.3919
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB - RoHS: Not Compliant	0	1 $0.5819 10 $0.5799 25 $0.5789 50 $0.5089 100 $0.4649 500 $0.4239 1000 $0.3839
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB - RoHS: Not Compliant	0	1 $1.14 10 $0.932 25 $0.86 50 $0.787 100 $0.715 500 $0.615 1000 $0.58
IRF630PBF DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 200V, 9A, Transistor Polarity:N	1000	1 $1.14 10 $0.932 25 $0.86 50 $0.787 100 $0.715 500 $0.615 1000 $0.58 2500 $0.562
IRF630PBF. DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 200V, 9A, Transistor Polarity:N	0	1 $1.16 10 $0.951 25 $0.877 50 $0.787 100 $0.715 500 $0.615 1000 $0.58 2500 $0.562
IRF630PBF DISTI #	Vishay Siliconix	IRF630PBF N-channel MOSFET Transistor, 9 A, 200 RoHS: Compliant	0	1 $0.968 10 $0.919 100 $0.894 250 $0.862 500 $0.813
IRF630PBF DISTI #	Vishay Dale	TRANSITOR, IRF630PBF RoHS: Compliant	0	5 $1.29 25 $1.07 100 $0.98 250 $0.89 500 $0.83
IRF630PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 200V 9.0 Amp RoHS: Compliant	989	1 $1.14 10 $0.932 100 $0.715 500 $0.615 1000 $0.485 2500 $0.453 5000 $0.43 10000 $0.414
IRF630PBF DISTI #	Vishay Intertechnologies	Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - RoHS: Compliant	746	20 $0.54 750 $0.51
IRF630PBF DISTI #	Vishay Intertechnologies	MOSFET N-CHANNEL 200V 9A TO220AB, PK	30	5 $0.958 25 $0.762 100 $0.628 250 $0.586 500 $0.518
IRF630PBF DISTI #	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 200V, 5.7A, 74	86	1 $0.52 5 $0.49 25 $0.43 100 $0.4 500 $0.35
IRF630PBF DISTI #	Vishay Intertechnologies	N-Ch 200V 9A 74W 0,4R TO220AB RoHS: Compliant	1150	25 $0.413 100 $0.333 300 $0.303 500 $0.292
IRF630PBF DISTI #	Vishay Intertechnologies	MOSFET N-Chan 200V 9.0 Amp RoHS: Compliant	6250	50 $0.597 100 $0.528 250 $0.481 500 $0.47 1000 $0.444
IRF630PBF DISTI #	Vishay Intertechnologies	MOSFET, N CH, 200V, 0.4OHM, 9A, TO-220AB RoHS: Compliant	1000	5 $0.786 25 $0.705 100 $0.541 250 $0.503 500 $0.465
IRF630PBF DISTI #	Vishay Intertechnologies	MOSFET, N CH, 200V, 0.4OHM, 9A, TO-220AB RoHS: Compliant	1075	1 $1.81 10 $1.47 100 $1.14 500 $0.974 1000 $0.88
IRF630PBF DISTI #	Vishay Siliconix	RoHS: Compliant	973	200 $1.08 973 $0.9818
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	986	50 $0.8178 100 $0.6616 500 $0.584
IRF630PBF DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 200V 9A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1661	5 $1.99 25 $0.799 50 $0.727 100 $0.648 500 $0.533 1000 $0.489
IRF630PBF DISTI #	Vishay Intertechnologies	MOSFETs RoHS: Compliant	1508	50 $0.8178 100 $0.6616 500 $0.584 1000 $0.4839

IRF630P~~(1)~~
IRF630~~(42)~~
IRF63~~(67)~~
IRF6~~(67)~~
IRF~~(69)~~

Vishay Siliconix IRF630PBF

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