Infineon Technologies IRF630NSTRRPBF

Name: IRF630NSTRRPBF
Brand: Infineon Technologies
SKU: 3586931-IRF630NSTRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF630NSTRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586931-IRF630NSTRRPBF

Description:: MOSFET N-CH 200V 9.3A D2PAK

ECAD Model:

Datasheet:: IRF630NSTRRPBF

Specifications

Infineon Technologies IRF630NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF630NSTRRPBF.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
2005
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
200V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
9.3A
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
82W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
82W
Case Connection
DRAIN
Turn On Delay Time
7.9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
300m Ω @ 5.4A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
575pF @ 25V
Current - Continuous Drain (Id) @ 25°C
9.3A Tc
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V
Rise Time
14ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
27 ns
Continuous Drain Current (ID)
9.3A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
200V
Avalanche Energy Rating (Eas)
94 mJ
Height
4.826mm
Length
10.668mm
Width
9.65mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

IRF630NSTRRPBF Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 94 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 575pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 200V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 200V.As a result of its turn-off delay time, which is 27 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 7.9 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).

IRF630NSTRRPBF Features
the avalanche energy rating (Eas) is 94 mJ
a continuous drain current (ID) of 9.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 27 ns

IRF630NSTRRPBF Applications
There are a lot of Infineon Technologies
IRF630NSTRRPBF applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

IRF630NSTRRPBF More Descriptions

200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2 Tab) D2PAK T/R
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:9.3A; On Resistance, Rds(on):300mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF630NSTRRPBF.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Avalanche Energy Rating (Eas)

Height

Length

Width

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

Input Capacitance

Rds On Max

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Drain to Source Resistance

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

View Compare
IRF630NSTRRPBF

Infineon Technologies

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2005

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

200V

MOSFET (Metal Oxide)

GULL WING

260

9.3A

30

R-PSSO-G2

1

82W Tc

Single

ENHANCEMENT MODE

82W

DRAIN

7.9 ns

N-Channel

SWITCHING

300m Ω @ 5.4A, 10V

4V @ 250μA

575pF @ 25V

9.3A Tc

35nC @ 10V

14ns

10V

±20V

15 ns

27 ns

9.3A

20V

200V

94 mJ

4.826mm

10.668mm

9.65mm

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF634STRR

Vishay Siliconix

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

2016

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

3.1W Ta 74W Tc

-

-

-

-

-

N-Channel

-

450mOhm @ 5.1A, 10V

4V @ 250μA

770pF @ 25V

8.1A Tc

41nC @ 10V

-

10V

±20V

-

-

8.1A

-

-

-

-

-

-

-

Non-RoHS Compliant

-

D2PAK

250V

770pF

450 mΩ

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF630NSTRRPBF vs IRF634STRR
IRF634NSPBF

Vishay Siliconix

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Tube

-

2009

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

3.8W Ta 88W Tc

Single

-

-

-

8.4 ns

N-Channel

-

435mOhm @ 4.8A, 10V

4V @ 250μA

620pF @ 25V

8A Tc

34nC @ 10V

16ns

10V

±20V

15 ns

28 ns

8A

20V

-

-

4.83mm

10.67mm

9.65mm

-

ROHS3 Compliant

-

D2PAK

250V

620pF

435 mΩ

1.437803g

175°C

-55°C

1

435mOhm

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF630NSTRRPBF vs IRF634NSPBF
IRF634

Vishay Siliconix

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

450 mOhm @ 5.1A, 10V

74W (Tc)

Tube

TO-220-3

-55°C ~ 150°C (TJ)

Through Hole

770pF @ 25V

41nC @ 10V

N-Channel

-

250V

8.1A (Tc)

IRF630NSTRRPBF vs IRF634