Infineon Technologies IRF5801TRPBF
- Part Number:
- IRF5801TRPBF
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3586017-IRF5801TRPBF
- Description:
- MOSFET N-CH 200V 600MA 6-TSOP
- ECAD Model:
-
- Datasheet:
- IRF5801TRPBF
Infineon Technologies IRF5801TRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5801TRPBF.
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesHEXFET®
- Published2002
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- TerminationSMD/SMT
- ECCN CodeEAR99
- Resistance2.2Ohm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- Voltage - Rated DC200V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating600mA
- Number of Elements1
- Power Dissipation-Max2W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2W
- Turn On Delay Time6.5 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.2 Ω @ 360mA, 10V
- Vgs(th) (Max) @ Id5.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds88pF @ 25V
- Current - Continuous Drain (Id) @ 25°C600mA Ta
- Gate Charge (Qg) (Max) @ Vgs3.9nC @ 10V
- Rise Time8ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)19 ns
- Turn-Off Delay Time8.8 ns
- Continuous Drain Current (ID)600mA
- Threshold Voltage5.5V
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage200V
- Pulsed Drain Current-Max (IDM)4.8A
- Dual Supply Voltage200V
- Avalanche Energy Rating (Eas)9.9 mJ
- Nominal Vgs5.5 V
- Height990.6μm
- Length2.9972mm
- Width1.7mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeContains Lead
IRF5801TRPBF Description
IRF5801TRPBF is a member of HEXFET? power MOSFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low gate-to-drain charge to reduce switching losses, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.
IRF5801TRPBF Features
Extremely low gate-to-drain charge
Fast switching speed
Low switching losses
Ultralow on-state resistance
Available in the TSOP-6 package
IRF5801TRPBF Applications
Synchronous rectification
Uninterruptible power supply
High-frequency DC/DC converters
IRF5801TRPBF is a member of HEXFET? power MOSFETs that are manufactured by Infineon Technologies based on advanced processing techniques. Based on these techniques, it is able to provide extremely low gate-to-drain charge to reduce switching losses, fast switching speed, and ruggedized device design. As a result, it is extremely efficient and reliable for electronic designers to use in a broad range of applications.
IRF5801TRPBF Features
Extremely low gate-to-drain charge
Fast switching speed
Low switching losses
Ultralow on-state resistance
Available in the TSOP-6 package
IRF5801TRPBF Applications
Synchronous rectification
Uninterruptible power supply
High-frequency DC/DC converters
IRF5801TRPBF More Descriptions
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 2.2 Ohms;ID 0.6A;TSOP-6;PD 2W;VGS /-30V
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHSInfineon SCT
Single N-Channel 200 V 2.2 Ohm 3.9 nC HEXFET® Power Mosfet - SC-74
Trans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R - Tape and Reel
Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET, N, 200V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:SMPS; Cont Current Id @ 25°C:600mA; Cont Current Id @ 70°C:0.48; Current Id Max:600mA; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:4.8A; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design | Target Applications: DC Switches; Load Switch
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 600 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) Ohm = 2.2 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 8.8 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP6 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
200V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHSInfineon SCT
Single N-Channel 200 V 2.2 Ohm 3.9 nC HEXFET® Power Mosfet - SC-74
Trans MOSFET N-CH 200V 0.6A 6-Pin TSOP T/R - Tape and Reel
Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
MOSFET, N, 200V, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:200V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:SMPS; Cont Current Id @ 25°C:600mA; Cont Current Id @ 70°C:0.48; Current Id Max:600mA; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:4.8A; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design | Target Applications: DC Switches; Load Switch
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 600 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) Ohm = 2.2 / Gate-Source Voltage V = 30 / Fall Time ns = 19 / Rise Time ns = 8 / Turn-OFF Delay Time ns = 8.8 / Turn-ON Delay Time ns = 6.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TSOP6 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
The three parts on the right have similar specifications to IRF5801TRPBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminationECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormCurrent RatingNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageAvalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceFET FeatureDrain to Source ResistanceRds On MaxSurface MountAdditional FeatureHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationCase ConnectionDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinView Compare
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IRF5801TRPBF12 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-66SILICON-55°C~150°C TJTape & Reel (TR)HEXFET®2002e3Active1 (Unlimited)6SMD/SMTEAR992.2OhmMatte Tin (Sn)FET General Purpose Power200VMOSFET (Metal Oxide)DUALGULL WING600mA12W TaSingleENHANCEMENT MODE2W6.5 nsN-ChannelSWITCHING2.2 Ω @ 360mA, 10V5.5V @ 250μA88pF @ 25V600mA Ta3.9nC @ 10V8ns10V±30V19 ns8.8 ns600mA5.5V30V200V4.8A200V9.9 mJ5.5 V990.6μm2.9972mm1.7mmNo SVHCNoROHS3 CompliantContains Lead--------------------- -
-Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--55°C~150°C TJTubeFETKY™2004-Obsolete1 (Unlimited)-------40VMOSFET (Metal Oxide)---3.4A-2W Ta--2W43 nsP-Channel-112mOhm @ 3.4A, 10V3V @ 250μA1110pF @ 25V3.4A Ta37nC @ 10V550ns4.5V 10V±20V50 ns88 ns-3.4A-20V-40V----1.5mm5mm4mm-NoRoHS CompliantLead Free8-SO150°C-55°C40V1.11nFSchottky Diode (Isolated)190mOhm112 mΩ------------
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA---55°C~175°C TJTubeHEXFET®2002-Obsolete1 (Unlimited)-------MOSFET (Metal Oxide)----3.8W Ta 70W Tc----N-Channel-90mOhm @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-10V±20V---------------Non-RoHS Compliant-TO-262--100V----------------
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--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-SILICON-55°C~175°C TJTubeHEXFET®2002e0Obsolete1 (Unlimited)2-EAR99-Tin/Lead (Sn/Pb)--MOSFET (Metal Oxide)SINGLEGULL WING-13.8W Ta 70W Tc-ENHANCEMENT MODE--N-ChannelSWITCHING90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-10V±20V------60A-93 mJ------Non-RoHS Compliant----100V----YESAVALANCHE RATED8541.29.00.9522530R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEDRAIN17A0.09Ohm100V
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