Infineon Technologies IRF540NSTRRPBF

Name: IRF540NSTRRPBF
Brand: Infineon Technologies
SKU: 2487702-IRF540NSTRRPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF540NSTRRPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2487702-IRF540NSTRRPBF

Description:: MOSFET N-CH 100V 33A D2PAK

ECAD Model:

Datasheet:: IRF540NSTRRPBF

Specifications

Infineon Technologies IRF540NSTRRPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF540NSTRRPBF.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Series
HEXFET®
Published
1997
JESD-609 Code
e3
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
130W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
44m Ω @ 16A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1960pF @ 25V
Current - Continuous Drain (Id) @ 25°C
33A Tc
Gate Charge (Qg) (Max) @ Vgs
71nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
33A
Drain-source On Resistance-Max
0.044Ohm
Pulsed Drain Current-Max (IDM)
110A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
185 mJ
RoHS Status
ROHS3 Compliant

Description

IRF540NSTRRPBF Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 185 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1960pF @ 25V.33A is the drain current of this device, which is the maximum continuous current transistor can carry.Peak drain current for this device is 110A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF540NSTRRPBF Features
the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 110A.
a 100V drain to source voltage (Vdss)

IRF540NSTRRPBF Applications
There are a lot of Infineon Technologies
IRF540NSTRRPBF applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

IRF540NSTRRPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;D2Pak;PD 130W;VGS /-20
Single N-Channel 100 V 44 mOhm 71nC HEXFET® Power Mosfet - D2PAK
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R - Tape and Reel
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; On Resistance Rds(On):0.044Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:-Rohs Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to IRF540NSTRRPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

Contact Plating

Mount

Number of Pins

Resistance

Max Operating Temperature

Min Operating Temperature

Voltage - Rated DC

Current Rating

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Recovery Time

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
IRF540NSTRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1997

e3

Not For New Designs

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

130W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

44m Ω @ 16A, 10V

4V @ 250μA

1960pF @ 25V

33A Tc

71nC @ 10V

100V

10V

±20V

33A

0.044Ohm

110A

100V

185 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF520NSTRRPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2004

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 48W Tc

-

-

N-Channel

-

200mOhm @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

100V

10V

±20V

-

-

-

-

-

-

D2PAK

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540NSTRRPBF vs IRF520NSTRRPBF
IRF520NSPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

-

-

Tube

HEXFET®

2004

e3

Discontinued

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

MOSFET (Metal Oxide)

-

GULL WING

260

30

R-PSSO-G2

-

1

-

3.8W Ta 48W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

200m Ω @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

-

10V

±20V

-

-

-

-

-

ROHS3 Compliant

-

Tin

Surface Mount

3

200mOhm

175°C

-55°C

100V

9.7A

Single

48W

4.5 ns

23ns

23 ns

32 ns

9.7A

4V

20V

100V

150 ns

4 V

4.826mm

10.668mm

10.16mm

No SVHC

No

Lead Free

IRF540NSTRRPBF vs IRF520NSPBF
IRF5210STRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 200W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

60m Ω @ 24A, 10V

4V @ 250μA

2700pF @ 25V

40A Tc

180nC @ 10V

100V

10V

±20V

38A

0.06Ohm

140A

100V

120 mJ

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540NSTRRPBF vs IRF5210STRR

Certification

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IRF540NSTRRPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T	4800	800 $0.5595
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T	170	1 $1.1611 10 $1.0115 25 $0.9998 100 $0.6706
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	0	800 $0.81258
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	0
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET N-CH 100V 33A D2PAK RoHS: Compliant	0
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T	16000	1600 $0.4857 3200 $0.4848 4800 $0.4827 8000 $0.4817 16000 $0.4807
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T	4800	800 $0.5595
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T	170	13 $1.0115 25 $0.9998 100 $0.6706
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	2400	800 $0.5039 1600 $0.4119 3200 $0.3779 4800 $0.3489 8000 $0.3239
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	1 $0.6589
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	1600 $0.5119 3200 $0.4939 4800 $0.4759 8000 $0.4599 16000 $0.4519
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH 100V 33A 3-Pin(2 Tab) D2PAK T/R RoHS: Compliant	0	800 $0.51474 1600 $0.49359 2400 $0.48692 4000 $0.46795 8000 $0.46195 20000 $0.4504 40000 $0.43941
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	N CHANNEL MOSFET, 100V, 6.5A D2-PAK, Transistor P	1	1 $1.47 10 $1.26 25 $1.17 50 $1.07 100 $0.985 250 $0.932 500 $0.879
IRF540NSTRRPBF. DISTI #	Infineon Technologies AG	PLANAR_MOSFETS , ROHS COMPLIANT: YES	0	1 $0.512 3200 $0.494 4800 $0.476 8000 $0.46 16000 $0.452
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Mil RoHS: Compliant	0	800 $2.34 1600 $2.07
IRF540NSTRRPBF DISTI #	International Rectifier	RoHS: Not Compliant	4000	1 $0.71 25 $0.66 100 $0.63 500 $0.6 1000 $0.57
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET 100V 1 N-CH HEXFET 44mOhms 47.3nC RoHS: Compliant	318	1 $1.46 10 $1.25 100 $0.957 500 $0.846
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 33A 100V D2PAK, PK	200	10 $0.86 100 $0.611 200 $0.578 400 $0.546 800 $0.419
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	HEXFET N-CH MOSFET 33A 100V D2PAK, RL	30	100 $0.611 200 $0.578 400 $0.546 800 $0.419
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 100V, 33A, 3.8	322	1 $0.68 3 $0.61 10 $0.51 100 $0.43
IRF540NSTRRPBF DISTI #	International Rectifier	RoHS: Compliant	740
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	16000	800 $0.596 1600 $0.551 2400 $0.456
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	Trans MOSFET N-CH Si 100V 33A 3-Pin(2 Tab) D2PAK T RoHS: Compliant	170	10 $1.0116 25 $0.7593
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant	1	5 $0.877 25 $0.734 100 $0.59 250 $0.557 500 $0.427
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant	1	1 $2.32 10 $1.98 100 $1.52 500 $1.34 800 $1.34
IRF540NSTRRPBF DISTI #	Infineon Technologies AG	MOSFET, N CH, 100V, 33A, TO-263-3 RoHS: Compliant	0	1 $2.32 10 $1.98 100 $1.52 500 $1.34 800 $1.34

IRF540N~~(15)~~
IRF540~~(40)~~
IRF54~~(46)~~
IRF5~~(66)~~
IRF~~(69)~~

Infineon Technologies IRF540NSTRRPBF

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