Fairchild/ON Semiconductor IRF540A
- Part Number:
- IRF540A
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2852680-IRF540A
- Description:
- MOSFET N-CH 100V 28A TO-220
- Datasheet:
- IRF540A TO220B03 Pkg Drawing
Fairchild/ON Semiconductor IRF540A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor IRF540A.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published1997
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Resistance52mOhm
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Power Dissipation-Max107W Tc
- Element ConfigurationSingle
- Power Dissipation107W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs52m Ω @ 14A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1710pF @ 25V
- Current - Continuous Drain (Id) @ 25°C28A Tc
- Gate Charge (Qg) (Max) @ Vgs78nC @ 10V
- Rise Time18ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Fall Time (Typ)56 ns
- Turn-Off Delay Time90 ns
- Continuous Drain Current (ID)28A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Nominal Vgs4 V
- Width10.67mm
- REACH SVHCNo SVHC
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
IRF540A Description
Power MOSFET IRF540A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET.
IRF540A Features Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175c Operating Temperature Lower Leakage Current:10A(Max) @Vs=100V Lower RDS(ON):0.041 Ω(Typ.) IRF540A Applications
high-level power
Power MOSFET IRF540A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET.
IRF540A Features Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175c Operating Temperature Lower Leakage Current:10A(Max) @Vs=100V Lower RDS(ON):0.041 Ω(Typ.) IRF540A Applications
high-level power
IRF540A More Descriptions
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220AB Rail
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:28A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 107W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 28A; Current Temperature: 25°C; Device Marking: IRF540A; External Length / Height: 4.83mm; External Width: 10.67mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 52mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pulse Current Idm: 110A; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:28A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 107W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 28A; Current Temperature: 25°C; Device Marking: IRF540A; External Length / Height: 4.83mm; External Width: 10.67mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 52mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pulse Current Idm: 110A; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
The three parts on the right have similar specifications to IRF540A.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceTechnologyNumber of ElementsPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageSeriesMax Operating TemperatureMin Operating TemperatureTurn On Delay TimeDrain to Source Voltage (Vdss)Vgs (Max)Threshold VoltageInput CapacitanceDrain to Source ResistanceRds On MaxRadiation HardeningView Compare
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IRF540AThrough HoleThrough HoleTO-220-33-55°C~175°C TJTube1997Obsolete1 (Unlimited)Through Hole52mOhmMOSFET (Metal Oxide)1107W TcSingle107WN-Channel52m Ω @ 14A, 10V4V @ 250μA1710pF @ 25V28A Tc78nC @ 10V18ns10V56 ns90 ns28A20V100V100V4 V10.67mmNo SVHCRoHS CompliantLead Free-------------
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Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66-55°C~150°C TJTape & Reel (TR)2010Obsolete2 (1 Year)SMD/SMT-MOSFET (Metal Oxide)12W Ta-2WP-Channel85mOhm @ 4A, 10V1V @ 250μA535pF @ 25V4A Ta17nC @ 10V-4.5V 10V-24 ns-4A20V-30V-30V-1 V-No SVHCRoHS CompliantLead FreeMicro6™(TSOP-6)HEXFET®150°C-55°C11.4 ns30V±20V-1V535pF85mOhm85 mΩNo
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB--55°C~175°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-3.8W Ta 48W Tc--N-Channel200mOhm @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V-10V-----------D2PAKHEXFET®---100V±20V-----
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-Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA--55°C~175°C TJTube2002Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-3.8W Ta 70W Tc--N-Channel90mOhm @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-10V---------Non-RoHS Compliant-TO-262HEXFET®---100V±20V-----
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