IRF540A

Fairchild/ON Semiconductor IRF540A

Part Number:
IRF540A
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2852680-IRF540A
Description:
MOSFET N-CH 100V 28A TO-220
ECAD Model:
Datasheet:
IRF540A TO220B03 Pkg Drawing

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Specifications
Fairchild/ON Semiconductor IRF540A technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor IRF540A.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    1997
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Termination
    Through Hole
  • Resistance
    52mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Power Dissipation-Max
    107W Tc
  • Element Configuration
    Single
  • Power Dissipation
    107W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    52m Ω @ 14A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1710pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    28A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    78nC @ 10V
  • Rise Time
    18ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Fall Time (Typ)
    56 ns
  • Turn-Off Delay Time
    90 ns
  • Continuous Drain Current (ID)
    28A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    100V
  • Dual Supply Voltage
    100V
  • Nominal Vgs
    4 V
  • Width
    10.67mm
  • REACH SVHC
    No SVHC
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRF540A  Description
  Power MOSFET IRF540A is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET.
IRF540A    Features   Avalanche Rugged Technology Rugged Gate Oxide Technology  Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175c Operating Temperature Lower Leakage Current:10A(Max) @Vs=100V  Lower RDS(ON):0.041 Ω(Typ.)   IRF540A    Applications
high-level power
IRF540A More Descriptions
Trans MOSFET N-CH 100V 28A 3-Pin(3 Tab) TO-220AB Rail
Power Field-Effect Transistor, 28A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:28A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 107W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 28A; Current Temperature: 25°C; Device Marking: IRF540A; External Length / Height: 4.83mm; External Width: 10.67mm; Full Power Rating Temperature: 25°C; No. of Transistors: 1; On State Resistance Max: 52mohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Pulse Current Idm: 110A; Termination Type: Through Hole; Voltage Vds Typ: 100V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 4V
Product Comparison
The three parts on the right have similar specifications to IRF540A.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Termination
    Resistance
    Technology
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Width
    REACH SVHC
    RoHS Status
    Lead Free
    Supplier Device Package
    Series
    Max Operating Temperature
    Min Operating Temperature
    Turn On Delay Time
    Drain to Source Voltage (Vdss)
    Vgs (Max)
    Threshold Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    Radiation Hardening
    View Compare
  • IRF540A
    IRF540A
    Through Hole
    Through Hole
    TO-220-3
    3
    -55°C~175°C TJ
    Tube
    1997
    Obsolete
    1 (Unlimited)
    Through Hole
    52mOhm
    MOSFET (Metal Oxide)
    1
    107W Tc
    Single
    107W
    N-Channel
    52m Ω @ 14A, 10V
    4V @ 250μA
    1710pF @ 25V
    28A Tc
    78nC @ 10V
    18ns
    10V
    56 ns
    90 ns
    28A
    20V
    100V
    100V
    4 V
    10.67mm
    No SVHC
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5800TRPBF
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -55°C~150°C TJ
    Tape & Reel (TR)
    2010
    Obsolete
    2 (1 Year)
    SMD/SMT
    -
    MOSFET (Metal Oxide)
    1
    2W Ta
    -
    2W
    P-Channel
    85mOhm @ 4A, 10V
    1V @ 250μA
    535pF @ 25V
    4A Ta
    17nC @ 10V
    -
    4.5V 10V
    -
    24 ns
    -4A
    20V
    -30V
    -30V
    -1 V
    -
    No SVHC
    RoHS Compliant
    Lead Free
    Micro6™(TSOP-6)
    HEXFET®
    150°C
    -55°C
    11.4 ns
    30V
    ±20V
    -1V
    535pF
    85mOhm
    85 mΩ
    No
  • IRF520NSTRRPBF
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    2004
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 48W Tc
    -
    -
    N-Channel
    200mOhm @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    -
    10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    HEXFET®
    -
    -
    -
    100V
    ±20V
    -
    -
    -
    -
    -
  • IRF530NL
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -55°C~175°C TJ
    Tube
    2002
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    3.8W Ta 70W Tc
    -
    -
    N-Channel
    90mOhm @ 9A, 10V
    4V @ 250μA
    920pF @ 25V
    17A Tc
    37nC @ 10V
    -
    10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    TO-262
    HEXFET®
    -
    -
    -
    100V
    ±20V
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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