Vishay Siliconix IRF540

Name: IRF540
Brand: Vishay Siliconix
SKU: 2851356-IRF540
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF540

Manufacturer:: Vishay Siliconix

Ventron No:: 2851356-IRF540

Description:: MOSFET N-CH 100V 28A TO-220AB

ECAD Model:

Datasheet:: IRF540

Specifications

Vishay Siliconix IRF540 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF540.

Vgs(th) (Max) @ Id:
4V @ 250µA
Technology:
MOSFET (Metal Oxide)
Supplier Device Package:
TO-220AB
Series:
-
Rds On (Max) @ Id, Vgs:
77 mOhm @ 17A, 10V
Power Dissipation (Max):
150W (Tc)
Packaging:
Tube
Package / Case:
TO-220-3
Operating Temperature:
-55°C ~ 175°C (TJ)
Mounting Type:
Through Hole
Input Capacitance (Ciss) (Max) @ Vds:
1700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
72nC @ 10V
FET Type:
N-Channel
FET Feature:
-
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
28A (Tc)

Description

Images are for reference only.See Product Specifications for product details.If you are interested to buy Vishay / Siliconix IRF540.

Product Comparison

The three parts on the right have similar specifications to IRF540.

Image

Part Number

Manufacturer

Vgs(th) (Max) @ Id:

Technology:

Supplier Device Package:

Series:

Rds On (Max) @ Id, Vgs:

Power Dissipation (Max):

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Input Capacitance (Ciss) (Max) @ Vds:

Gate Charge (Qg) (Max) @ Vgs:

FET Type:

FET Feature:

Drain to Source Voltage (Vdss):

Current - Continuous Drain (Id) @ 25°C:

Mount

Mounting Type

Package / Case

Number of Pins

Supplier Device Package

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Termination

Max Operating Temperature

Min Operating Temperature

Technology

Number of Elements

Power Dissipation-Max

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Nominal Vgs

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Contact Plating

JESD-609 Code

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Element Configuration

Operating Mode

Case Connection

Transistor Application

Rise Time

Fall Time (Typ)

Recovery Time

Height

Length

Width

View Compare
IRF540

Vishay Siliconix

4V @ 250µA

MOSFET (Metal Oxide)

TO-220AB

-

77 mOhm @ 17A, 10V

150W (Tc)

Tube

TO-220-3

-55°C ~ 175°C (TJ)

Through Hole

1700pF @ 25V

72nC @ 10V

N-Channel

-

100V

28A (Tc)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF5800TRPBF

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

Micro6™(TSOP-6)

-55°C~150°C TJ

Tape & Reel (TR)

HEXFET®

2010

Obsolete

2 (1 Year)

SMD/SMT

150°C

-55°C

MOSFET (Metal Oxide)

1

2W Ta

2W

11.4 ns

P-Channel

85mOhm @ 4A, 10V

1V @ 250μA

535pF @ 25V

4A Ta

17nC @ 10V

30V

4.5V 10V

±20V

24 ns

-4A

-1V

20V

-30V

-30V

535pF

85mOhm

85 mΩ

-1 V

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540 vs IRF5800TRPBF
IRF520NSPBF

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-

Tube

HEXFET®

2004

Discontinued

1 (Unlimited)

-

175°C

-55°C

MOSFET (Metal Oxide)

1

3.8W Ta 48W Tc

48W

4.5 ns

N-Channel

200m Ω @ 5.7A, 10V

4V @ 250μA

330pF @ 25V

9.7A Tc

25nC @ 10V

-

10V

±20V

32 ns

9.7A

4V

20V

100V

-

-

-

-

4 V

No SVHC

No

ROHS3 Compliant

Lead Free

Tin

e3

2

EAR99

200mOhm

AVALANCHE RATED, HIGH RELIABILITY

FET General Purpose Power

100V

GULL WING

260

9.7A

30

R-PSSO-G2

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

23ns

23 ns

150 ns

4.826mm

10.668mm

10.16mm

IRF540 vs IRF520NSPBF
IRF530NL

Infineon Technologies

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

TO-262

-55°C~175°C TJ

Tube

HEXFET®

2002

Obsolete

1 (Unlimited)

-

-

-

MOSFET (Metal Oxide)

-

3.8W Ta 70W Tc

-

-

N-Channel

90mOhm @ 9A, 10V

4V @ 250μA

920pF @ 25V

17A Tc

37nC @ 10V

100V

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF540 vs IRF530NL