Vishay Siliconix IRF530PBF
- Part Number:
- IRF530PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478759-IRF530PBF
- Description:
- MOSFET N-CH 100V 14A TO-220AB
- Datasheet:
- IRF530PBF
Vishay Siliconix IRF530PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF530PBF.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2004
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationThrough Hole
- Resistance160mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating14A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max88W Tc
- Element ConfigurationSingle
- Power Dissipation88W
- Turn On Delay Time10 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs160mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds670pF @ 25V
- Current - Continuous Drain (Id) @ 25°C14A Tc
- Gate Charge (Qg) (Max) @ Vgs26nC @ 10V
- Rise Time30ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time23 ns
- Continuous Drain Current (ID)14A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage100V
- Dual Supply Voltage100V
- Input Capacitance670pF
- Recovery Time280 ns
- Drain to Source Resistance270mOhm
- Rds On Max160 mΩ
- Nominal Vgs4 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF530PBF Overview
A device's maximal input capacitance is 670pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 270mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF530PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF530PBF Applications
There are a lot of Vishay Siliconix
IRF530PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 670pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 14A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 23 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 270mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This transistor requires a 100V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF530PBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF530PBF Applications
There are a lot of Vishay Siliconix
IRF530PBF applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
The three parts on the right have similar specifications to IRF530PBF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishAdditional FeatureHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF530PBF8 WeeksThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube2004Active1 (Unlimited)Through Hole160mOhm175°C-55°C100VMOSFET (Metal Oxide)14A1188W TcSingle88W10 nsN-Channel160mOhm @ 8.4A, 10V4V @ 250μA670pF @ 25V14A Tc26nC @ 10V30ns100V10V±20V20 ns23 ns14A4V20V100V100V670pF280 ns270mOhm160 mΩ4 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free-------------------------
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--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA----55°C~175°C TJTube1998Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---3.8W Ta 48W Tc---N-Channel200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V-100V10V±20V-----------------Non-RoHS Compliant-HEXFET®-----------------------
-
--Through HoleTO-262-3 Long Leads, I2Pak, TO-262AA-TO-262--55°C~175°C TJTube2002Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---3.8W Ta 70W Tc---N-Channel90mOhm @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-100V10V±20V-----------------Non-RoHS Compliant-HEXFET®-----------------------
-
--Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTube2002Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)-1-3.8W Ta 70W Tc---N-Channel90m Ω @ 9A, 10V4V @ 250μA920pF @ 25V17A Tc37nC @ 10V-100V10V±20V-----------------Non-RoHS Compliant-HEXFET®YESSILICONe02EAR99Tin/Lead (Sn/Pb)AVALANCHE RATED8541.29.00.95SINGLEGULL WING22530R-PSSO-G2Not QualifiedSINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING17A0.09Ohm60A100V93 mJ
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