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IRF5305STRLPBF

Infineon Technologies IRF5305STRLPBF

Part Number:
IRF5305STRLPBF
Manufacturer:
Infineon Technologies
Ventron No:
2478703-IRF5305STRLPBF
Description:
MOSFET P-CH 55V 31A D2PAK
ECAD Model:
Datasheet:
IRF5305STRLPBF

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Specifications
Infineon Technologies IRF5305STRLPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5305STRLPBF.
  • Factory Lead Time
    12 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    HEXFET®
  • Published
    2005
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    60mOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -55V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -31A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    3.8W Ta 110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    14 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    60m Ω @ 16A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1200pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    31A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    63nC @ 10V
  • Rise Time
    66ns
  • Drain to Source Voltage (Vdss)
    55V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    63 ns
  • Turn-Off Delay Time
    39 ns
  • Continuous Drain Current (ID)
    -31A
  • Threshold Voltage
    -4V
  • JEDEC-95 Code
    TO-252
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -55V
  • Dual Supply Voltage
    -55V
  • Avalanche Energy Rating (Eas)
    280 mJ
  • Recovery Time
    110 ns
  • Max Junction Temperature (Tj)
    175°C
  • Nominal Vgs
    -4 V
  • Height
    5.084mm
  • Length
    10.668mm
  • Width
    9.65mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Contains Lead, Lead Free
Description
IRF5305STRLPBF Description
IRF5305STRLPBF is a P-channel MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 55V. The operating temperature of the IRF5305STRLPBF is -55°C~175°C TJ and its maximum power dissipation is 110W. IRF5305STRLPBF has 3 pins and it is available in Tape & Reel packaging way.

IRF5305STRLPBF Features
Max Junction Temperature (Tj): 175°C
Avalanche Energy Rating (Eas): 280 mJ
Drain to Source Breakdown Voltage: -55V
Continuous Drain Current (ID): -31A

IRF5305STRLPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRF5305STRLPBF More Descriptions
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;D2Pak;PD 110W;VGS /-20V
MOSFET P-CH 55V 31A D2PAK / Trans MOSFET P-CH 55V 31A 3-Pin(2 Tab) D2PAK T/R
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Single P-Channel 55V 0.06 Ohm 63 nC HEXFET® Power Mosfet - D2PAK
Single P-Channel 55 V 60 mOhm 42 nC HEXFET® Power Mosfet - D2PAK
P CHANNEL MOSFET, -55V, 31A, D2-PAK; TRA; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A;
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
P Channel Mosfet, -55V, 31A, D2-Pak; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF5305STRLPBF.
MOSFET, P-CH, -55V, -31A, TO-263-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -31A; Drain Source Voltage Vds: -55V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 110W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Product Comparison
The three parts on the right have similar specifications to IRF5305STRLPBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Avalanche Energy Rating (Eas)
    Recovery Time
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    View Compare
  • IRF5305STRLPBF
    IRF5305STRLPBF
    Infineon Technologies
    12 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    e3
    Active
    1 (Unlimited)
    2
    EAR99
    60mOhm
    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY
    Other Transistors
    -55V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -31A
    30
    R-PSSO-G2
    1
    1
    3.8W Ta 110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    14 ns
    P-Channel
    SWITCHING
    60m Ω @ 16A, 10V
    4V @ 250μA
    1200pF @ 25V
    31A Tc
    63nC @ 10V
    66ns
    55V
    10V
    ±20V
    63 ns
    39 ns
    -31A
    -4V
    TO-252
    20V
    -55V
    -55V
    280 mJ
    110 ns
    175°C
    -4 V
    5.084mm
    10.668mm
    9.65mm
    No SVHC
    No
    ROHS3 Compliant
    Contains Lead, Lead Free
    -
    -
    -
    -
  • IRF520NSTRRPBF
    IRF520NSTRRPBF
    Infineon Technologies
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    200mOhm @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK
    -
    -
    IRF5305STRLPBF vs IRF520NSTRRPBF
  • IRF520NL
    IRF520NL
    Infineon Technologies
    -
    -
    -
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -
    -
    -55°C~175°C TJ
    Tube
    HEXFET®
    1998
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    -
    3.8W Ta 48W Tc
    -
    -
    -
    -
    -
    N-Channel
    -
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    -
    -
    -
    IRF5305STRLPBF vs IRF520NL
  • IRF520NSPBF
    IRF520NSPBF
    Infineon Technologies
    -
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    Tube
    HEXFET®
    2004
    e3
    Discontinued
    1 (Unlimited)
    2
    EAR99
    200mOhm
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    100V
    MOSFET (Metal Oxide)
    GULL WING
    260
    9.7A
    30
    R-PSSO-G2
    1
    -
    3.8W Ta 48W Tc
    Single
    ENHANCEMENT MODE
    48W
    DRAIN
    4.5 ns
    N-Channel
    SWITCHING
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    23ns
    -
    10V
    ±20V
    23 ns
    32 ns
    9.7A
    4V
    -
    20V
    100V
    -
    -
    150 ns
    -
    4 V
    4.826mm
    10.668mm
    10.16mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    175°C
    -55°C
    IRF5305STRLPBF vs IRF520NSPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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