Infineon Technologies IRF5210SPBF

Name: IRF5210SPBF
Brand: Infineon Technologies
SKU: 3586063-IRF5210SPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF5210SPBF

Manufacturer:: Infineon Technologies

Ventron No:: 3586063-IRF5210SPBF

Description:: MOSFET P-CH 100V 38A D2PAK

ECAD Model:

Datasheet:: IRF5210SPBF

Specifications

Infineon Technologies IRF5210SPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF5210SPBF.

Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HEXFET®
Published
1998
JESD-609 Code
e3
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
3.1W Ta 170W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
60m Ω @ 38A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2780pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38A Tc
Gate Charge (Qg) (Max) @ Vgs
230nC @ 10V
Drain to Source Voltage (Vdss)
100V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
38A
Drain-source On Resistance-Max
0.06Ohm
Pulsed Drain Current-Max (IDM)
140A
DS Breakdown Voltage-Min
100V
Avalanche Energy Rating (Eas)
120 mJ
RoHS Status
ROHS3 Compliant

Description

IRF5210SPBF Description
The IRF5210SPBF is a -100V single P-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. Its features combine to make this design an extremely efficient and reliable device for a wide variety of other applications.

IRF5210SPBF Features
Advanced Process Technology
Ultra-Low On-Resistance
150°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

IRF5210SPBF Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives

IRF5210SPBF More Descriptions

Single P-Channel 100 V 60 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 60 Milliohms;ID -38A;D2Pak;PD 170W;-55degc
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHSInfineon SCT
Trans MOSFET P-CH 100V 38A 3-Pin(2 Tab) D2PAK Tube
MOSFET Operating temperature: -55...150 °C Housing type: D2PAK Polarity: P Power dissipation: 200 W
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
MOSFET, P, D2-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:200W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:-40A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Power Dissipation on 1 Sq. PCB:3.8W; Pulse Current Idm:140A; SMD Marking:IRF5210S; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF5210SPBF.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Supplier Device Package

View Compare
IRF5210SPBF

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~150°C TJ

Tube

HEXFET®

1998

e3

Discontinued

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

8541.29.00.95

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.1W Ta 170W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

60m Ω @ 38A, 10V

4V @ 250μA

2780pF @ 25V

38A Tc

230nC @ 10V

100V

10V

±20V

38A

0.06Ohm

140A

100V

120 mJ

ROHS3 Compliant

-

-
IRF530NL

Infineon Technologies

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

-

-

-55°C~175°C TJ

Tube

HEXFET®

2002

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

3.8W Ta 70W Tc

-

-

N-Channel

-

90mOhm @ 9A, 10V

4V @ 250μA

920pF @ 25V

17A Tc

37nC @ 10V

100V

10V

±20V

-

-

-

-

-

Non-RoHS Compliant

TO-262

IRF5210SPBF vs IRF530NL
IRF5210STRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

1998

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

-

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 200W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

60m Ω @ 24A, 10V

4V @ 250μA

2700pF @ 25V

40A Tc

180nC @ 10V

100V

10V

±20V

38A

0.06Ohm

140A

100V

120 mJ

Non-RoHS Compliant

-

IRF5210SPBF vs IRF5210STRR
IRF5305STRR

Infineon Technologies

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

YES

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2000

e3

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - with Nickel (Ni) barrier

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

-

Other Transistors

MOSFET (Metal Oxide)

SINGLE

GULL WING

260

30

R-PSSO-G2

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

3.8W Ta 110W Tc

ENHANCEMENT MODE

DRAIN

P-Channel

SWITCHING

60m Ω @ 16A, 10V

4V @ 250μA

1200pF @ 25V

31A Tc

63nC @ 10V

55V

10V

±20V

31A

0.06Ohm

110A

55V

280 mJ

Non-RoHS Compliant

-

IRF5210SPBF vs IRF5305STRR

Certification

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IRF5210SPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF5210SPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 38A 3-Pin(2 Tab) D2PAK Tube RoHS: Compliant	7578	1000 $0.8274 1002 $0.7977 2002 $0.7689 5000 $0.7429 10000 $0.7414
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET P-CH 100V 38A D2PAK RoHS: Compliant	0
IRF5210SPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 38A 3-Pin(2 Tab) D2PAK Tube RoHS: Compliant	1436	1 $1.84 10 $1.01
IRF5210SPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 38A 3-Pin(2 Tab) D2PAK Tube RoHS: Compliant	7578	5 $2.17 25 $1.76 100 $1.44 500 $1.33 1000 $1.01 2000 $0.945
IRF5210SPBF DISTI #	Infineon Technologies AG	Trans MOSFET P-CH 100V 38A 3-Pin(2 Tab) D2PAK (Alt RoHS: Compliant	20879	1 $1.8909 10 $1.4499 25 $1.3849 50 $1.3809 100 $1.2829 500 $1.1169 1000 $0.9319
IRF5210SPBF DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -100V, 40A D2-PAK, Transistor P	0
IRF5210SPBF. DISTI #	Infineon Technologies AG	P CHANNEL MOSFET, -100V, 40A D2-PAK, Transistor P	0
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET, Power, P-Ch, VDSS -100V, RDS(ON) 60 Mi RoHS: Compliant	0	1 $3.81 10 $3.36 100 $2.93 500 $2.54 1000 $2.24
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET 1 P-CH -100V HEXFET 60mOhms 120nC RoHS: Compliant	0
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 100V 38A D2PAK, TU	50	50 $1.39 250 $1.088 1000 $0.789 2500 $0.73
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 100V 38A D2PAK, TU	3643	10 $1.07 25 $0.97
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET P-CHANNEL 100V 38A D2PAK, EA	712	1 $2 10 $1.07 25 $0.97
IRF5210SPBF DISTI #	International Rectifier		437
IRF5210SPBF DISTI #	International Rectifier		3
IRF5210SPBF DISTI #	International Rectifier	38 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFE	40	1 $1.71 4 $1.425 19 $1.14
IRF5210SPBF DISTI #	International Rectifier	38 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFE	99	1 $2.28 16 $1.425 54 $1.254
IRF5210SPBF DISTI #	Infineon Technologies AG	38 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFE	41	1 $2.28 3 $1.71 16 $1.425
IRF5210SPBF DISTI #	N/A	38 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFE	4	1 $3.76 2 $2.82
IRF5210SPBF DISTI #	International Rectifier	38 A, 100 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFE	11883	1 $3.5517 458 $1.9534 1025 $1.7759
IRF5210SPBF DISTI #	Infineon Technologies AG	Transistor: P-MOSFET, unipolar, -100V, -40A, 3	625	1 $1.61 3 $1.48 10 $1.22 100 $1.03
IRF5210SPBF DISTI #	Infineon Technologies AG	P-CH 100V 40A 44mOhm D2PAK RoHS: Compliant	550	50 $1.3 150 $1.22 250 $1.15 550 $1.0372 1000 $1.0002
IRF5210SPBF DISTI #	INF	RoHS: Compliant	6316	550 $1.65 6316 $1.51
IRF5210SPBF DISTI #	N/A	RoHS (ship within 1day)	5	1 $2.42 10 $1.84 50 $1.45 100 $1.14 500 $0.97 1000 $0.94
IRF5210SPBF DISTI #	Infineon Technologies AG	P-Ch 100V 38A 170W 0,06R DPak RoHS: Compliant	2040	10 $1.16 50 $0.862 200 $0.762 500 $0.7335
IRF5210STRLPBF DISTI #	Infineon Technologies AG	P-Ch 100V 38A 170W 0,06R DPak RoHS: Compliant	1410	10 $1.03 50 $0.825 200 $0.725 500 $0.698
IRF5210SPBF DISTI #	International Rectifier	RoHS: Compliant	220
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET, P, D2-PAK RoHS: Compliant	2355	1 $3.5 10 $2.98 100 $2.38 500 $2.07 1000 $1.73 2000 $1.6 5000 $1.55 10000 $1.49
IRF5210SPBF DISTI #	Infineon Technologies AG	MOSFET, P, D2-PAK RoHS: Compliant	2298	1 $1.71 10 $0.97 100 $0.91 250 $0.85 500 $0.79

IRF5210~~(10)~~
IRF521~~(11)~~
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IRF~~(69)~~

Infineon Technologies IRF5210SPBF

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