IRF520PBF

Vishay Siliconix IRF520PBF

Part Number:
IRF520PBF
Manufacturer:
Vishay Siliconix
Ventron No:
2478767-IRF520PBF
Description:
MOSFET N-CH 100V 9.2A TO-220AB
ECAD Model:
Datasheet:
IRF520PBF

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Specifications
Vishay Siliconix IRF520PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF520PBF.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Supplier Device Package
    TO-220AB
  • Weight
    6.000006g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    1997
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    270mOhm
  • Max Operating Temperature
    175°C
  • Min Operating Temperature
    -55°C
  • Voltage - Rated DC
    100V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    9.2A
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    60W Tc
  • Element Configuration
    Single
  • Power Dissipation
    60W
  • Turn On Delay Time
    8.8 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    270mOhm @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    360pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9.2A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    16nC @ 10V
  • Rise Time
    30ns
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    20 ns
  • Turn-Off Delay Time
    19 ns
  • Continuous Drain Current (ID)
    9.2A
  • Threshold Voltage
    4V
  • Gate to Source Voltage (Vgs)
    20V
  • Input Capacitance
    360pF
  • Recovery Time
    260 ns
  • Drain to Source Resistance
    270mOhm
  • Rds On Max
    270 mΩ
  • Nominal Vgs
    10 V
  • Height
    9.01mm
  • Length
    10.41mm
  • Width
    4.7mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IRF520PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 9.2A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 270mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF520PBF Features
a continuous drain current (ID) of 9.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRF520PBF Applications
There are a lot of Vishay Siliconix
IRF520PBF applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF520PBF More Descriptions
Transistor: N-MOSFET; unipolar; 100V; 9.2A; 0.2ohm; 45W; -55 175 deg.C; THT; TO220
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 9.2A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 100V 9.2A TO-220AB
100V 9.2A 270m´Î@10V5.5A 60W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Junction to Case Thermal Resistance A:2.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to IRF520PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Voltage - Rated DC
    Technology
    Current Rating
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Input Capacitance
    Recovery Time
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Series
    JESD-609 Code
    Number of Terminations
    ECCN Code
    Additional Feature
    Subcategory
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Operating Mode
    Case Connection
    Transistor Application
    Drain to Source Breakdown Voltage
    FET Feature
    Surface Mount
    Transistor Element Material
    Terminal Finish
    Terminal Position
    Qualification Status
    Configuration
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    View Compare
  • IRF520PBF
    IRF520PBF
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    TO-220AB
    6.000006g
    -55°C~175°C TJ
    Tube
    1997
    Active
    1 (Unlimited)
    270mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    9.2A
    1
    1
    60W Tc
    Single
    60W
    8.8 ns
    N-Channel
    270mOhm @ 5.5A, 10V
    4V @ 250μA
    360pF @ 25V
    9.2A Tc
    16nC @ 10V
    30ns
    100V
    10V
    ±20V
    20 ns
    19 ns
    9.2A
    4V
    20V
    360pF
    260 ns
    270mOhm
    270 mΩ
    10 V
    9.01mm
    10.41mm
    4.7mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF520NSPBF
    -
    Tin
    Surface Mount
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    -
    -
    -
    Tube
    2004
    Discontinued
    1 (Unlimited)
    200mOhm
    175°C
    -55°C
    100V
    MOSFET (Metal Oxide)
    9.7A
    1
    -
    3.8W Ta 48W Tc
    Single
    48W
    4.5 ns
    N-Channel
    200m Ω @ 5.7A, 10V
    4V @ 250μA
    330pF @ 25V
    9.7A Tc
    25nC @ 10V
    23ns
    -
    10V
    ±20V
    23 ns
    32 ns
    9.7A
    4V
    20V
    -
    150 ns
    -
    -
    4 V
    4.826mm
    10.668mm
    10.16mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    HEXFET®
    e3
    2
    EAR99
    AVALANCHE RATED, HIGH RELIABILITY
    FET General Purpose Power
    GULL WING
    260
    30
    R-PSSO-G2
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    100V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5803D2PBF
    -
    -
    Surface Mount
    Surface Mount
    8-SOIC (0.154, 3.90mm Width)
    8
    8-SO
    -
    -55°C~150°C TJ
    Tube
    2004
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    -40V
    MOSFET (Metal Oxide)
    -3.4A
    -
    -
    2W Ta
    -
    2W
    43 ns
    P-Channel
    112mOhm @ 3.4A, 10V
    3V @ 250μA
    1110pF @ 25V
    3.4A Ta
    37nC @ 10V
    550ns
    40V
    4.5V 10V
    ±20V
    50 ns
    88 ns
    -3.4A
    -
    20V
    1.11nF
    -
    190mOhm
    112 mΩ
    -
    1.5mm
    5mm
    4mm
    -
    No
    RoHS Compliant
    Lead Free
    FETKY™
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -40V
    Schottky Diode (Isolated)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF5210STRR
    -
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    -
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    1998
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    1
    -
    3.8W Ta 200W Tc
    -
    -
    -
    P-Channel
    60m Ω @ 24A, 10V
    4V @ 250μA
    2700pF @ 25V
    40A Tc
    180nC @ 10V
    -
    100V
    10V
    ±20V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    HEXFET®
    e3
    2
    EAR99
    HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
    Other Transistors
    GULL WING
    260
    30
    R-PSSO-G2
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    -
    -
    YES
    SILICON
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    38A
    0.06Ohm
    140A
    100V
    120 mJ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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