Vishay Siliconix IRF520PBF
- Part Number:
- IRF520PBF
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478767-IRF520PBF
- Description:
- MOSFET N-CH 100V 9.2A TO-220AB
- Datasheet:
- IRF520PBF
Vishay Siliconix IRF520PBF technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix IRF520PBF.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Supplier Device PackageTO-220AB
- Weight6.000006g
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published1997
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance270mOhm
- Max Operating Temperature175°C
- Min Operating Temperature-55°C
- Voltage - Rated DC100V
- TechnologyMOSFET (Metal Oxide)
- Current Rating9.2A
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max60W Tc
- Element ConfigurationSingle
- Power Dissipation60W
- Turn On Delay Time8.8 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs270mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds360pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9.2A Tc
- Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
- Rise Time30ns
- Drain to Source Voltage (Vdss)100V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)20 ns
- Turn-Off Delay Time19 ns
- Continuous Drain Current (ID)9.2A
- Threshold Voltage4V
- Gate to Source Voltage (Vgs)20V
- Input Capacitance360pF
- Recovery Time260 ns
- Drain to Source Resistance270mOhm
- Rds On Max270 mΩ
- Nominal Vgs10 V
- Height9.01mm
- Length10.41mm
- Width4.7mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IRF520PBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 9.2A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 270mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF520PBF Features
a continuous drain current (ID) of 9.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF520PBF Applications
There are a lot of Vishay Siliconix
IRF520PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 9.2A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 270mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF520PBF Features
a continuous drain current (ID) of 9.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)
IRF520PBF Applications
There are a lot of Vishay Siliconix
IRF520PBF applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
IRF520PBF More Descriptions
Transistor: N-MOSFET; unipolar; 100V; 9.2A; 0.2ohm; 45W; -55 175 deg.C; THT; TO220
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 9.2A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 100V 9.2A TO-220AB
100V 9.2A 270m´Î@10V5.5A 60W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Junction to Case Thermal Resistance A:2.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Single N-Channel 100 V 0.27 Ohms Flange Mount Power Mosfet - TO-220-3
Trans MOSFET N-CH 100V 9.2A 3-Pin(3 Tab) TO-220AB / MOSFET N-CH 100V 9.2A TO-220AB
100V 9.2A 270m´Î@10V5.5A 60W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 100V, 9.2A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):270mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to 175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.2A; Junction to Case Thermal Resistance A:2.5°C/W; Package / Case:TO-220AB; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulse Current Idm:37A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to IRF520PBF.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureVoltage - Rated DCTechnologyCurrent RatingNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceRecovery TimeDrain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSeriesJESD-609 CodeNumber of TerminationsECCN CodeAdditional FeatureSubcategoryTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeOperating ModeCase ConnectionTransistor ApplicationDrain to Source Breakdown VoltageFET FeatureSurface MountTransistor Element MaterialTerminal FinishTerminal PositionQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)View Compare
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IRF520PBF8 WeeksTinThrough HoleThrough HoleTO-220-33TO-220AB6.000006g-55°C~175°C TJTube1997Active1 (Unlimited)270mOhm175°C-55°C100VMOSFET (Metal Oxide)9.2A1160W TcSingle60W8.8 nsN-Channel270mOhm @ 5.5A, 10V4V @ 250μA360pF @ 25V9.2A Tc16nC @ 10V30ns100V10V±20V20 ns19 ns9.2A4V20V360pF260 ns270mOhm270 mΩ10 V9.01mm10.41mm4.7mmUnknownNoROHS3 CompliantLead Free---------------------------
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-TinSurface MountSurface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB3---Tube2004Discontinued1 (Unlimited)200mOhm175°C-55°C100VMOSFET (Metal Oxide)9.7A1-3.8W Ta 48W TcSingle48W4.5 nsN-Channel200m Ω @ 5.7A, 10V4V @ 250μA330pF @ 25V9.7A Tc25nC @ 10V23ns-10V±20V23 ns32 ns9.7A4V20V-150 ns--4 V4.826mm10.668mm10.16mmNo SVHCNoROHS3 CompliantLead FreeHEXFET®e32EAR99AVALANCHE RATED, HIGH RELIABILITYFET General Purpose PowerGULL WING26030R-PSSO-G2ENHANCEMENT MODEDRAINSWITCHING100V------------
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--Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SO--55°C~150°C TJTube2004Obsolete1 (Unlimited)-150°C-55°C-40VMOSFET (Metal Oxide)-3.4A--2W Ta-2W43 nsP-Channel112mOhm @ 3.4A, 10V3V @ 250μA1110pF @ 25V3.4A Ta37nC @ 10V550ns40V4.5V 10V±20V50 ns88 ns-3.4A-20V1.11nF-190mOhm112 mΩ-1.5mm5mm4mm-NoRoHS CompliantLead FreeFETKY™-------------40VSchottky Diode (Isolated)-----------
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---Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB----55°C~175°C TJTape & Reel (TR)1998Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-1-3.8W Ta 200W Tc---P-Channel60m Ω @ 24A, 10V4V @ 250μA2700pF @ 25V40A Tc180nC @ 10V-100V10V±20V---------------Non-RoHS Compliant-HEXFET®e32EAR99HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCEOther TransistorsGULL WING26030R-PSSO-G2ENHANCEMENT MODEDRAINSWITCHING--YESSILICONMatte Tin (Sn) - with Nickel (Ni) barrierSINGLENot QualifiedSINGLE WITH BUILT-IN DIODE38A0.06Ohm140A100V120 mJ
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