Infineon Technologies IRF2807ZPBF

Name: IRF2807ZPBF
Brand: Infineon Technologies
SKU: 2483088-IRF2807ZPBF
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IRF2807ZPBF

Manufacturer:: Infineon Technologies

Ventron No:: 2483088-IRF2807ZPBF

Description:: MOSFET N-CH 75V 75A TO-220AB

ECAD Model:

Datasheet:: IRF2807ZPBF

Specifications

Infineon Technologies IRF2807ZPBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF2807ZPBF.

Factory Lead Time
12 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
HEXFET®
Published
2003
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
9.4Ohm
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
75V
Technology
MOSFET (Metal Oxide)
Current Rating
75A
Number of Elements
1
Power Dissipation-Max
170W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
170W
Case Connection
DRAIN
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
9.4m Ω @ 53A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
3270pF @ 25V
Current - Continuous Drain (Id) @ 25°C
75A Tc
Gate Charge (Qg) (Max) @ Vgs
110nC @ 10V
Rise Time
79ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
75A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
75V
Dual Supply Voltage
75V
Nominal Vgs
4 V
Height
9.017mm
Length
10.668mm
Width
4.826mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free

Description

IRF2807ZPBF Description
The incredibly low on-resistance per silicon area of this HEXFET? Power MOSFET is achieved by using the most recent manufacturing processes. A 175°C junction operating temperature, quick switching, and increased repeating avalanche rating are other characteristics of this design. These characteristics work together to make this design a very effective and dependable tool for use in a range of applications.

IRF2807ZPBF Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

IRF2807ZPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

IRF2807ZPBF More Descriptions

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 7.5Milliohms;ID 89A;TO-220AB;PD 170W;-55deg
Single N-Channel 75 V 9.4 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHSInfineon SCT
Trans MOSFET N-CH Si 75V 89A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 75A I(D), 75V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull
MOSFET, N, 75V, 89A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:75V; On Resistance Rds(on):9.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:9.4ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

Product Comparison

The three parts on the right have similar specifications to IRF2807ZPBF.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Current Rating

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

JESD-609 Code

Termination

Terminal Finish

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Reverse Recovery Time

Recovery Time

Surface Mount

Terminal Position

Qualification Status

Configuration

Drain to Source Voltage (Vdss)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
IRF2807ZPBF

Infineon Technologies

12 Weeks

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2003

Active

1 (Unlimited)

3

EAR99

9.4Ohm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

75V

MOSFET (Metal Oxide)

75A

1

170W Tc

Single

ENHANCEMENT MODE

170W

DRAIN

18 ns

N-Channel

SWITCHING

9.4m Ω @ 53A, 10V

4V @ 250μA

3270pF @ 25V

75A Tc

110nC @ 10V

79ns

10V

±20V

45 ns

40 ns

75A

4V

TO-220AB

20V

75V

75V

4 V

9.017mm

10.668mm

4.826mm

No SVHC

No

ROHS3 Compliant

Contains Lead, Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
IRF2907ZS-7PPBF

Infineon Technologies

-

Surface Mount

Surface Mount

TO-263-7, D2Pak (6 Leads Tab), TO-263CB

7

SILICON

-55°C~175°C TJ

Tube

HEXFET®

2005

Obsolete

1 (Unlimited)

6

EAR99

4.5MOhm

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

FET General Purpose Power

75V

MOSFET (Metal Oxide)

160A

1

300W Tc

Single

ENHANCEMENT MODE

300W

DRAIN

21 ns

N-Channel

SWITCHING

3.8m Ω @ 110A, 10V

4V @ 250μA

7580pF @ 25V

160A Tc

260nC @ 10V

90ns

10V

±20V

44 ns

92 ns

160A

4V

-

20V

75V

75V

4 V

4.5466mm

10.3378mm

10.05mm

No SVHC

No

RoHS Compliant

Lead Free

e3

SMD/SMT

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G6

35 ns

53 ns

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

IRF2807ZPBF vs IRF2907ZS-7PPBF
IRF2807STRRPBF

Infineon Technologies

39 Weeks

-

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

-

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

HEXFET®

2002

Not For New Designs

1 (Unlimited)

2

EAR99

-

AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

1

230W Tc

-

ENHANCEMENT MODE

-

DRAIN

-

N-Channel

SWITCHING

13m Ω @ 43A, 10V

4V @ 250μA

3820pF @ 25V

82A Tc

160nC @ 10V

-

10V

±20V

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

e3

-

Matte Tin (Sn) - with Nickel (Ni) barrier

GULL WING

260

30

R-PSSO-G2

-

-

YES

SINGLE

Not Qualified

SINGLE WITH BUILT-IN DIODE

75V

75A

0.013Ohm

280A

75V

340 mJ

-

-

-

-

-

-

IRF2807ZPBF vs IRF2807STRRPBF
IRF2903ZLPBF

Infineon Technologies

-

Through Hole

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

3

-

-55°C~175°C TJ

Tube

HEXFET®

2010

Obsolete

1 (Unlimited)

-

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

231W Tc

-

-

231W

-

19 ns

N-Channel

-

2.4mOhm @ 75A, 10V

4V @ 150μA

6320pF @ 25V

75A Tc

240nC @ 10V

140ns

10V

±20V

100 ns

48 ns

75A

-

-

20V

30V

-

4 V

9.65mm

10.668mm

4.826mm

No SVHC

No

RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

30V

-

-

-

-

-

TO-262

175°C

-55°C

6.32nF

2.4mOhm

2.4 mΩ

IRF2807ZPBF vs IRF2903ZLPBF

Certification

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IRF2807ZPBF Specification

Part Number	Manufacturers	Description	Stock	Price
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 89A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	960	1 $1.2358 10 $1.0865 100 $0.903 500 $0.8044 1000 $0.6841 2000 $0.6576 5000 $0.6221 10000 $0.5871
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	MOSFET N-CH 75V 75A TO-220AB RoHS: Compliant	5154	1 $1.79 10 $1.617 100 $1.2994 500 $1.01062 1000 $0.83738
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 89A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	960	11 $1.084 100 $0.9013 500 $0.8028
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 89A 3-Pin(3 Tab) TO-220AB - RoHS: Compliant	0	1000 $0.6049 2000 $0.5829 4000 $0.5619 6000 $0.5429 10000 $0.5329
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Trans MOSFET N-CH 75V 89A 3-Pin(3 Tab) TO-220AB (A RoHS: Compliant	0
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	MOSFET Transistor, N Channel, 89 A, 75 V, 9.4 mohm	221	1 $1.55 10 $1.32 100 $1.05 500 $0.919 1000 $0.762 2500 $0.709 10000 $0.657
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 7.5 Mil RoHS: Compliant	0	500 $1.82
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	MOSFET MOSFT 75V 89A 9.4mOhm 71nC RoHS: Compliant	1823	1 $1.55 10 $1.32 100 $1.05 500 $0.919 1000 $0.762 2000 $0.709 5000 $0.683 10000 $0.657
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	HEXFET N-CH MOSFET 89A 75V TO-220AB, TU	240	50 $1.001 100 $0.981 150 $0.961 250 $0.942
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	HEXFET N-CH MOSFET 89A 75V TO-220AB, PK	150	10 $1.021 50 $1.001 100 $0.981 150 $0.961 250 $0.942
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Transistor: N-MOSFET, unipolar, 75V, 89A, 170W	220	1 $1.02 3 $0.95 10 $0.78 50 $0.69
IRF2807ZPBF DISTI #IRF2807ZPBF	STMicroelectronics	INSTOCK	1000
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	MOSFET, N, 75V, 89A, TO-220 RoHS: Compliant	271	5 $1.03 25 $0.982 100 $0.803 250 $0.753 500 $0.702
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 89A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	960	10 $1.0958 100 $0.9183 500 $0.8053
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	Trans MOSFET N-CH Si 75V 89A 3-Pin(3 Tab) TO-220AB RoHS: Compliant	1000	1 $2.26 10 $1.92 50 $1.57 100 $1.53 200 $1.52 1000 $1.38
IRF2807ZPBF DISTI #IRF2807ZPBF	Infineon Technologies AG	MOSFET, N, 75V, 89A, TO-220 RoHS: Compliant	221	5 $2.26 20 $1.97 100 $1.6

IRF2807~~(20)~~
IRF280~~(46)~~
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Infineon Technologies IRF2807ZPBF

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