IRF2804STRL-7P

Infineon Technologies IRF2804STRL-7P

Part Number:
IRF2804STRL-7P
Manufacturer:
Infineon Technologies
Ventron No:
3813762-IRF2804STRL-7P
Description:
MOSFET N-CH 40V 160A D2PAK7
ECAD Model:
Datasheet:
IRF2804S-7P

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Specifications
Infineon Technologies IRF2804STRL-7P technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF2804STRL-7P.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-7, D2Pak (6 Leads Tab), TO-263CB
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    HEXFET®
  • Published
    2005
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Configuration
    Single
  • Power Dissipation-Max
    330W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.6m Ω @ 160A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6930pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    160A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    260nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    160A
  • Drain Current-Max (Abs) (ID)
    320A
  • RoHS Status
    Non-RoHS Compliant
Description
IRF2804STRL-7P Overview
The maximum input capacitance of this device is 6930pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 160A.As shown in the table below, the drain current of this device is 320A.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF2804STRL-7P Features
a continuous drain current (ID) of 160A
a 40V drain to source voltage (Vdss)


IRF2804STRL-7P Applications
There are a lot of Infineon Technologies
IRF2804STRL-7P applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF2804STRL-7P More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package.
Trans MOSFET N-CH 40V 320A 7-Pin(6 Tab) D2PAK T/R
MOSFET N-CH 40V 160A D2PAK7
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to IRF2804STRL-7P.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Technology
    Configuration
    Power Dissipation-Max
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Drain Current-Max (Abs) (ID)
    RoHS Status
    Number of Pins
    Termination
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Dual Supply Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Factory Lead Time
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Operating Mode
    Case Connection
    Transistor Application
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • IRF2804STRL-7P
    IRF2804STRL-7P
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab), TO-263CB
    -55°C~175°C TJ
    Tube
    HEXFET®
    2005
    Obsolete
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    Single
    330W Tc
    N-Channel
    1.6m Ω @ 160A, 10V
    4V @ 250μA
    6930pF @ 25V
    160A Tc
    260nC @ 10V
    40V
    10V
    ±20V
    160A
    320A
    Non-RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF2907ZLPBF
    Through Hole
    Through Hole
    TO-262-3 Long Leads, I2Pak, TO-262AA
    -55°C~175°C TJ
    Tube
    HEXFET®
    2003
    Obsolete
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    300W Tc
    N-Channel
    4.5m Ω @ 75A, 10V
    4V @ 250μA
    7500pF @ 25V
    160A Tc
    270nC @ 10V
    -
    10V
    ±20V
    170A
    -
    RoHS Compliant
    3
    Through Hole
    Single
    300W
    19 ns
    140ns
    100 ns
    97 ns
    4V
    20V
    75V
    75V
    4 V
    9.652mm
    10.668mm
    4.826mm
    No SVHC
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRF2807STRRPBF
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2002
    Not For New Designs
    1 (Unlimited)
    EAR99
    FET General Purpose Power
    MOSFET (Metal Oxide)
    SINGLE WITH BUILT-IN DIODE
    230W Tc
    N-Channel
    13m Ω @ 43A, 10V
    4V @ 250μA
    3820pF @ 25V
    82A Tc
    160nC @ 10V
    75V
    10V
    ±20V
    -
    75A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    39 Weeks
    YES
    SILICON
    e3
    2
    Matte Tin (Sn) - with Nickel (Ni) barrier
    AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    1
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    0.013Ohm
    280A
    75V
    340 mJ
    -
    -
    -
    -
    -
    -
  • IRF2804STRR7PP
    Surface Mount
    Surface Mount
    TO-263-7, D2Pak (6 Leads Tab), TO-263CB
    -55°C~175°C TJ
    Tape & Reel (TR)
    HEXFET®
    2005
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    330W Tc
    N-Channel
    1.6mOhm @ 160A, 10V
    4V @ 250μA
    6930pF @ 25V
    160A Tc
    260nC @ 10V
    40V
    10V
    ±20V
    160A
    -
    RoHS Compliant
    3
    -
    Single
    330W
    13 ns
    120ns
    130 ns
    130 ns
    -
    20V
    40V
    -
    -
    -
    -
    -
    -
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    D2PAK (7-Lead)
    175°C
    -55°C
    6.93nF
    2mOhm
    1.6 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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