Infineon Technologies IRF2804STRL-7P
- Part Number:
- IRF2804STRL-7P
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3813762-IRF2804STRL-7P
- Description:
- MOSFET N-CH 40V 160A D2PAK7
- Datasheet:
- IRF2804S-7P
Infineon Technologies IRF2804STRL-7P technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRF2804STRL-7P.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-7, D2Pak (6 Leads Tab), TO-263CB
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesHEXFET®
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- ConfigurationSingle
- Power Dissipation-Max330W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.6m Ω @ 160A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds6930pF @ 25V
- Current - Continuous Drain (Id) @ 25°C160A Tc
- Gate Charge (Qg) (Max) @ Vgs260nC @ 10V
- Drain to Source Voltage (Vdss)40V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)160A
- Drain Current-Max (Abs) (ID)320A
- RoHS StatusNon-RoHS Compliant
IRF2804STRL-7P Overview
The maximum input capacitance of this device is 6930pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 160A.As shown in the table below, the drain current of this device is 320A.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF2804STRL-7P Features
a continuous drain current (ID) of 160A
a 40V drain to source voltage (Vdss)
IRF2804STRL-7P Applications
There are a lot of Infineon Technologies
IRF2804STRL-7P applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 6930pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 160A.As shown in the table below, the drain current of this device is 320A.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF2804STRL-7P Features
a continuous drain current (ID) of 160A
a 40V drain to source voltage (Vdss)
IRF2804STRL-7P Applications
There are a lot of Infineon Technologies
IRF2804STRL-7P applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IRF2804STRL-7P More Descriptions
40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package.
Trans MOSFET N-CH 40V 320A 7-Pin(6 Tab) D2PAK T/R
MOSFET N-CH 40V 160A D2PAK7
OEMs, CMs ONLY (NO BROKERS)
Trans MOSFET N-CH 40V 320A 7-Pin(6 Tab) D2PAK T/R
MOSFET N-CH 40V 160A D2PAK7
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to IRF2804STRL-7P.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryTechnologyConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain Current-Max (Abs) (ID)RoHS StatusNumber of PinsTerminationElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeThreshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningFactory Lead TimeSurface MountTransistor Element MaterialJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsOperating ModeCase ConnectionTransistor ApplicationDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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IRF2804STRL-7PSurface MountSurface MountTO-263-7, D2Pak (6 Leads Tab), TO-263CB-55°C~175°C TJTubeHEXFET®2005Obsolete1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)Single330W TcN-Channel1.6m Ω @ 160A, 10V4V @ 250μA6930pF @ 25V160A Tc260nC @ 10V40V10V±20V160A320ANon-RoHS Compliant----------------------------------------------
-
Through HoleThrough HoleTO-262-3 Long Leads, I2Pak, TO-262AA-55°C~175°C TJTubeHEXFET®2003Obsolete1 (Unlimited)EAR99-MOSFET (Metal Oxide)-300W TcN-Channel4.5m Ω @ 75A, 10V4V @ 250μA7500pF @ 25V160A Tc270nC @ 10V-10V±20V170A-RoHS Compliant3Through HoleSingle300W19 ns140ns100 ns97 ns4V20V75V75V4 V9.652mm10.668mm4.826mmNo SVHCNo---------------------------
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-Surface MountTO-263-3, D2Pak (2 Leads Tab), TO-263AB-55°C~175°C TJTape & Reel (TR)HEXFET®2002Not For New Designs1 (Unlimited)EAR99FET General Purpose PowerMOSFET (Metal Oxide)SINGLE WITH BUILT-IN DIODE230W TcN-Channel13m Ω @ 43A, 10V4V @ 250μA3820pF @ 25V82A Tc160nC @ 10V75V10V±20V-75AROHS3 Compliant------------------39 WeeksYESSILICONe32Matte Tin (Sn) - with Nickel (Ni) barrierAVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCESINGLEGULL WING26030R-PSSO-G2Not Qualified1ENHANCEMENT MODEDRAINSWITCHING0.013Ohm280A75V340 mJ------
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Surface MountSurface MountTO-263-7, D2Pak (6 Leads Tab), TO-263CB-55°C~175°C TJTape & Reel (TR)HEXFET®2005Obsolete1 (Unlimited)--MOSFET (Metal Oxide)-330W TcN-Channel1.6mOhm @ 160A, 10V4V @ 250μA6930pF @ 25V160A Tc260nC @ 10V40V10V±20V160A-RoHS Compliant3-Single330W13 ns120ns130 ns130 ns-20V40V------No---------------------D2PAK (7-Lead)175°C-55°C6.93nF2mOhm1.6 mΩ
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