Infineon Technologies IPW65R110CFD

Name: IPW65R110CFD
Brand: Infineon Technologies
SKU: 2479087-IPW65R110CFD
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IPW65R110CFD

Manufacturer:: Infineon Technologies

Ventron No:: 2479087-IPW65R110CFD

Description:: MOSFET N-CH 650V 31.2A TO247

ECAD Model:

Datasheet:: IPW65R110CFD

Specifications

Infineon Technologies IPW65R110CFD technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW65R110CFD.

Package / Case
TO-247
Packaging
Tube-packed
FET Type
N Channel
Rds On (Max) @ Id, Vgs
110mΩ @ 12.7A,10V
Vgs(th) (Max) @ Id
4.5V @ 1.3mA
Drain to Source Voltage (Vdss)
650V
Continuous Drain Current (Id) @ 25°C
31.2A Tc
Power Dissipation-Max (Ta=25°C)
277.8W Tc
RoHS Status
RoHS Compliant

Description

IPW65R110CFD Overview
This product is manufactured by Infineon Technologies and belongs to the category of Transistors - FETs, MOSFETs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IPW65R110CFD or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IPW65R110CFD. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

Product Comparison

The three parts on the right have similar specifications to IPW65R110CFD.

Image

Part Number

Manufacturer

Package / Case

Packaging

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Drain to Source Voltage (Vdss)

Continuous Drain Current (Id) @ 25°C

Power Dissipation-Max (Ta=25°C)

RoHS Status

Mounting Type

Supplier Device Package

Operating Temperature

Series

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Factory Lead Time

Mount

Number of Pins

Published

Max Operating Temperature

Min Operating Temperature

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Max Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Lead Free

View Compare
IPW65R110CFD

Infineon Technologies

TO-247

Tube-packed

N Channel

110mΩ @ 12.7A,10V

4.5V @ 1.3mA

650V

31.2A Tc

277.8W Tc

RoHS Compliant

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-

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IPW65R310CFDFKSA1

Infineon Technologies

TO-247-3

Tube

N-Channel

310mOhm @ 4.4A, 10V

4.5V @ 440μA

650V

-

-

ROHS3 Compliant

Through Hole

PG-TO247-3

-55°C~150°C TJ

CoolMOS™

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

104.2W Tc

1.1pF @ 100V

11.4A Tc

41nC @ 10V

10V

±20V

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IPW65R110CFD vs IPW65R310CFDFKSA1
IPW60R160P6FKSA1

Infineon Technologies

TO-247-3

Tube

N-Channel

160mOhm @ 9A, 10V

4.5V @ 750μA

600V

-

-

ROHS3 Compliant

Through Hole

PG-TO247-3

-55°C~150°C TJ

CoolMOS™ P6

Active

1 (Unlimited)

MOSFET (Metal Oxide)

176W Tc

2080pF @ 100V

23.8A Tc

44nC @ 10V

10V

±20V

18 Weeks

Through Hole

3

2008

150°C

-55°C

12.5 ns

7.6ns

5.8 ns

40 ns

23.8A

20V

600V

2.08nF

144mOhm

160 mΩ

Lead Free

IPW65R110CFD vs IPW60R160P6FKSA1
IPW60R075CP

Infineon Technologies

PG-TO247-3

Tube-packed

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-

RoHS Compliant

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IPW65R110CFD vs IPW60R075CP