Infineon Technologies IPW60R250CP
- Part Number:
- IPW60R250CP
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3071816-IPW60R250CP
- Description:
- MOSFET N-CH 650V 12A TO-247
- ECAD Model:
-
- Datasheet:
- IPW60R250CP
Infineon Technologies IPW60R250CP technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IPW60R250CP.
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Supplier Device PackagePG-TO247-3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesCoolMOS™
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max104W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs250mOhm @ 7.8A, 10V
- Vgs(th) (Max) @ Id3.5V @ 440μA
- Input Capacitance (Ciss) (Max) @ Vds1.2pF @ 100V
- Current - Continuous Drain (Id) @ 25°C12A Tc
- Gate Charge (Qg) (Max) @ Vgs35nC @ 10V
- Drain to Source Voltage (Vdss)650V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- RoHS StatusROHS3 Compliant
IPW60R250CP Overview
A device's maximum input capacitance is 1.2pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPW60R250CP Features
a 650V drain to source voltage (Vdss)
IPW60R250CP Applications
There are a lot of Rochester Electronics, LLC
IPW60R250CP applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 1.2pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
IPW60R250CP Features
a 650V drain to source voltage (Vdss)
IPW60R250CP Applications
There are a lot of Rochester Electronics, LLC
IPW60R250CP applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IPW60R250CP More Descriptions
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-247
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-247;;RoHS Compliant: Yes
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
MOSFET, N, TO-247; Transistor Type:Power MOSFET; Transistor Polarity:N Channel; Voltage, Vds Typ:650V; Current, Id Cont:12A; On State Resistance:0.25ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:3V; Case Style:TO-247;;RoHS Compliant: Yes
CoolMOS CP, Infineon's fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV. | Summary of Features: Lowest figure of merit R on x Q g; Ultra low gate charge; Extreme dv/dt rate; Ultra low R DS(on), ultra low gate charge, very fast switching; V th 3 V, g fs very high, internal R g very low; High current capability; Significant reduction of conduction and switching losses; High power density and efficiency for superior power conversion systems; Best-in-class price/performance ratio | Target Applications: Solar; Server; Telecom; Consumer; Adapter; PC power
The three parts on the right have similar specifications to IPW60R250CP.
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ImagePart NumberManufacturerMounting TypePackage / CaseSupplier Device PackageOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)TechnologyPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)RoHS StatusContinuous Drain Current (Id) @ 25°CPower Dissipation-Max (Ta=25°C)Factory Lead TimeMountNumber of PinsPublishedMax Operating TemperatureMin Operating TemperatureTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxLead FreeView Compare
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IPW60R250CPThrough HoleTO-247-3PG-TO247-3-55°C~150°C TJTubeCoolMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)104W TcN-Channel250mOhm @ 7.8A, 10V3.5V @ 440μA1.2pF @ 100V12A Tc35nC @ 10V650V10V±20VROHS3 Compliant-------------------- -
-TO-247--Tube-packed-----N Channel70mΩ @ 25.8A,10V3.5V @ 1.72mA---600V--RoHS Compliant53A Tc391W Tc-----------------
-
Through HoleTO-247-3PG-TO247-3-55°C~150°C TJTubeCoolMOS™Obsolete1 (Unlimited)MOSFET (Metal Oxide)104.2W TcN-Channel310mOhm @ 4.4A, 10V4.5V @ 440μA1.1pF @ 100V11.4A Tc41nC @ 10V650V10V±20VROHS3 Compliant-------------------
-
Through HoleTO-247-3PG-TO247-3-55°C~150°C TJTubeCoolMOS™ P6Active1 (Unlimited)MOSFET (Metal Oxide)176W TcN-Channel160mOhm @ 9A, 10V4.5V @ 750μA2080pF @ 100V23.8A Tc44nC @ 10V600V10V±20VROHS3 Compliant--18 WeeksThrough Hole32008150°C-55°C12.5 ns7.6ns5.8 ns40 ns23.8A20V600V2.08nF144mOhm160 mΩLead Free
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